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FDN338P

Fairchild/ON Semiconductor FDN338P

Part Number:
FDN338P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3070015-FDN338P
Description:
MOSFET P-CH 20V 1.6A SSOT3
ECAD Model:
Datasheet:
UMW FDN338P

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Specifications
Fairchild/ON Semiconductor FDN338P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN338P.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    115mOhm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -1.6A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    500mW
  • Turn On Delay Time
    10 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    115m Ω @ 1.6A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    451pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    1.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    6.2nC @ 4.5V
  • Rise Time
    11ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    1.6A
  • Threshold Voltage
    -800mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -20V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -800 mV
  • Height
    1.22mm
  • Width
    3.05mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDN338P Description

The FDN338P is a 2.5V P-channel MOSFET that uses the PowerTrench? low voltage technology. It was designed with battery power management and load switching in mind. In the same footprint, the SuperSOTTM -3 has a lower RDS (ON) and a 30% better power handling capabilities than the SOT23.

FDN338P Features

–1.6 A, –20 V
RDS(ON)= 115 mΩ @ VGS = –4.5 V
RDS(ON) = 155 mΩ @ VGS = –2.5 V
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT? -3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint

FDN338P Applications

Battery Management
Load Switch
Battery Protection
This product is general usage and suitable for many different applications
FDN338P More Descriptions
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.6A, 115mΩ
This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.6A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:5A; SMD Marking:338; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V
Product Comparison
The three parts on the right have similar specifications to FDN338P.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Continuous Drain Current (Id) @ 25°C
    Max Operating Temperature
    Min Operating Temperature
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Length
    View Compare
  • FDN338P
    FDN338P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    115mOhm
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -1.6A
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    10 ns
    P-Channel
    SWITCHING
    115m Ω @ 1.6A, 4.5V
    1.5V @ 250μA
    451pF @ 10V
    1.6A Ta
    6.2nC @ 4.5V
    11ns
    20V
    2.5V 4.5V
    ±8V
    11 ns
    16 ns
    1.6A
    -800mV
    8V
    -20V
    150°C
    -800 mV
    1.22mm
    3.05mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • FDN337N
    FDN337N
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    -
    SOT-23
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N Channel
    -
    80mΩ @ 3.6A,4.5V
    1.3V @ 250uA
    -
    -
    -
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    3A
    -
    -
    -
    -
    -
    -
    FDN338P vs FDN337N
  • FDN359BN_F095
    FDN359BN_F095
    Fairchild/ON Semiconductor
    -
    12 Weeks
    -
    -
    -
    -
    3
    -
    -
    -
    Digi-Reel®
    -
    2008
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    150°C
    -55°C
    -
    -
    -
    -
    FDN338P vs FDN359BN_F095
  • FDN361BN
    FDN361BN
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 7 hours ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    FAST SWITCHING
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    3 ns
    N-Channel
    SWITCHING
    110m Ω @ 1.4A, 10V
    3V @ 250μA
    193pF @ 15V
    1.4A Ta
    1.8nC @ 4.5V
    8ns
    -
    4.5V 10V
    ±20V
    8 ns
    16 ns
    1.4A
    2.1V
    20V
    30V
    -
    -
    940μm
    2.92mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1.4mm
    FDN338P vs FDN361BN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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