Fairchild/ON Semiconductor FDD8770

Name: FDD8770
Brand: Fairchild/ON Semiconductor
SKU: 3070286-FDD8770
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD8770

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3070286-FDD8770

Description:: MOSFET N-CH 25V 35A DPAK

ECAD Model:

Datasheet:: FDD8770

Specifications

Fairchild/ON Semiconductor FDD8770 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD8770.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
4MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
25V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
35A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
115W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
115W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3720pF @ 13V
Current - Continuous Drain (Id) @ 25°C
35A Tc
Gate Charge (Qg) (Max) @ Vgs
73nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
49 ns
Continuous Drain Current (ID)
35A
Threshold Voltage
1.6V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
25V
Pulsed Drain Current-Max (IDM)
407A
Nominal Vgs
1.6 V
Height
6.35mm
Length
6.35mm
Width
6.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDD8770 Description
FDD8770 is a 25v N-Channel PowerTrench? MOSFET. This onsemi N-Channel MOSFET FDD8770 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDD8770 has been optimized for low gate charge, low rDS(on), and fast switching speed. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDD8770 is in the DPAK-3 package with 115W power dissipation.

FDD8770 Features
Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A
Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A
Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V
Low gate resistance
RoHS Compliant

FDD8770 Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture

FDD8770 More Descriptions

PowerTrench® MOSFET, N-Channel, 25V, 35A, 4.0mΩ
N CHANNEL MOSFET, 25V, 35A TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Source Voltage Vds:25V; On Resistance
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.

Product Comparison

The three parts on the right have similar specifications to FDD8770.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Published

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

View Compare
FDD8770

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

10 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

2

EAR99

4MOhm

Tin (Sn)

FET General Purpose Power

25V

MOSFET (Metal Oxide)

GULL WING

35A

R-PSSO-G2

1

115W Tc

Single

ENHANCEMENT MODE

115W

DRAIN

10 ns

N-Channel

SWITCHING

4m Ω @ 35A, 10V

2.5V @ 250μA

3720pF @ 13V

35A Tc

73nC @ 10V

12ns

4.5V 10V

±20V

25 ns

49 ns

35A

1.6V

TO-252AA

20V

25V

407A

1.6 V

6.35mm

6.35mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
FDD8447L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

2

EAR99

8.5MOhm

-

FET General Purpose Power

40V

MOSFET (Metal Oxide)

GULL WING

54A

R-PSSO-G2

1

3.1W Ta 44W Tc

Single

ENHANCEMENT MODE

3.8W

DRAIN

12 ns

N-Channel

SWITCHING

8.5m Ω @ 14A, 10V

3V @ 250μA

1970pF @ 20V

15.2A Ta 50A Tc

52nC @ 10V

12ns

4.5V 10V

±20V

9 ns

38 ns

15.2A

1.9V

-

20V

40V

-

1.9 V

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

2016

-

-

-

FDD8770 vs FDD8447L
FDD86102LZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

2

EAR99

-

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

3.1W Ta 54W Tc

Single

ENHANCEMENT MODE

54W

DRAIN

6.6 ns

N-Channel

SWITCHING

22.5m Ω @ 8A, 10V

3V @ 250μA

1540pF @ 50V

8A Ta 35A Tc

26nC @ 10V

2.3ns

4.5V 10V

±20V

2.3 ns

20 ns

8A

1.5V

-

20V

100V

40A

1.5 V

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

-

-

2006

8A

0.0225Ohm

84 mJ

FDD8770 vs FDD86102LZ
FDD8647L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

2

EAR99

13MOhm

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

3.1W Ta 43W Tc

Single

ENHANCEMENT MODE

3.1W

DRAIN

8 ns

N-Channel

SWITCHING

9m Ω @ 13A, 10V

3V @ 250μA

1640pF @ 20V

14A Ta 42A Tc

28nC @ 10V

3ns

4.5V 10V

±20V

2 ns

19 ns

14A

2V

-

20V

40V

-

-

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

2006

52A

-

-

FDD8770 vs FDD8647L