Fairchild/ON Semiconductor FDD8750
- Part Number:
- FDD8750
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2851987-FDD8750
- Description:
- MOSFET N-CH 25V 6.5A DPAK
- Datasheet:
- FDD8750
Fairchild/ON Semiconductor FDD8750 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD8750.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMATTE TIN
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.7W Ta 18W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs40m Ω @ 2.7A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds425pF @ 13V
- Current - Continuous Drain (Id) @ 25°C6.5A Ta 2.7A Tc
- Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)6.5A
- Drain-source On Resistance-Max63Ohm
- Pulsed Drain Current-Max (IDM)14A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)19 mJ
- RoHS StatusROHS3 Compliant
FDD8750 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 19 mJ.A device's maximum input capacitance is 425pF @ 13V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 6.5A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 14A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 25V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDD8750 Features
the avalanche energy rating (Eas) is 19 mJ
based on its rated peak drain current 14A.
a 25V drain to source voltage (Vdss)
FDD8750 Applications
There are a lot of Rochester Electronics, LLC
FDD8750 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 19 mJ.A device's maximum input capacitance is 425pF @ 13V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 6.5A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 14A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 25V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDD8750 Features
the avalanche energy rating (Eas) is 19 mJ
based on its rated peak drain current 14A.
a 25V drain to source voltage (Vdss)
FDD8750 Applications
There are a lot of Rochester Electronics, LLC
FDD8750 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
FDD8750 More Descriptions
N-Channel 25V 6.5A (Ta), 2.7A (Tc) 3.7W (Ta), 18W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk
25V, 2.7A, 40MO, NCH DPAK POWER TRENCH MOSFET
MOSFETs 25V N-Channel PowerTrench MOSFET
MOSFET N-CH 25V 6.5A/2.7A DPAK
MOSFET, N, SMD, TO-252; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:25V; Current, Id Cont:2.7A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:DPAK; Termination Type:SMD; Current, Idm Pulse:14A; No. of Pins:2; Power Dissipation:18mW; Voltage, Vds Max:25V
25V, 2.7A, 40MO, NCH DPAK POWER TRENCH MOSFET
MOSFETs 25V N-Channel PowerTrench MOSFET
MOSFET N-CH 25V 6.5A/2.7A DPAK
MOSFET, N, SMD, TO-252; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:25V; Current, Id Cont:2.7A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:DPAK; Termination Type:SMD; Current, Idm Pulse:14A; No. of Pins:2; Power Dissipation:18mW; Voltage, Vds Max:25V
The three parts on the right have similar specifications to FDD8750.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLifecycle StatusFactory Lead TimeMountNumber of PinsWeightECCN CodeSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningLead FreePublishedThreshold VoltageNominal VgsHeightLengthWidthREACH SVHCResistanceView Compare
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FDD8750Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)2MATTE TINAVALANCHE RATEDMOSFET (Metal Oxide)SINGLEGULL WING260unknownNOT SPECIFIED3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.7W Ta 18W TcENHANCEMENT MODEDRAINN-Channel40m Ω @ 2.7A, 10V2.5V @ 250μA425pF @ 13V6.5A Ta 2.7A Tc9nC @ 10V25V4.5V 10V±20V6.5A63Ohm14A25V19 mJROHS3 Compliant-------------------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)2Tin (Sn)-MOSFET (Metal Oxide)-GULL WING----R-PSSO-G2-1-70W TcENHANCEMENT MODEDRAINN-Channel8.2m Ω @ 35A, 10V2.5V @ 250μA1700pF @ 15V15A Ta 73A Tc47nC @ 10V-4.5V 10V±20V----95 mJROHS3 CompliantACTIVE (Last Updated: 1 week ago)10 WeeksSurface Mount3260.37mgEAR99FET General Purpose Power30V73ASingle70W8 nsSWITCHING91ns37 ns44 ns73ATO-252AA20V30VNoLead Free--------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)2Tin (Sn)-MOSFET (Metal Oxide)-GULL WING----R-PSSO-G2-1-3.1W Ta 54W TcENHANCEMENT MODEDRAINN-Channel22.5m Ω @ 8A, 10V3V @ 250μA1540pF @ 50V8A Ta 35A Tc26nC @ 10V-4.5V 10V±20V8A0.0225Ohm40A-84 mJROHS3 CompliantACTIVE (Last Updated: 1 day ago)8 WeeksSurface Mount3260.37mgEAR99FET General Purpose Power--Single54W6.6 nsSWITCHING2.3ns2.3 ns20 ns8A-20V100VNo-20061.5V1.5 V2.39mm6.73mm6.22mmNo SVHC-
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)2Tin (Sn)-MOSFET (Metal Oxide)-GULL WING----R-PSSO-G2-1-3.1W Ta 43W TcENHANCEMENT MODEDRAINN-Channel9m Ω @ 13A, 10V3V @ 250μA1640pF @ 20V14A Ta 42A Tc28nC @ 10V-4.5V 10V±20V52A----ROHS3 CompliantACTIVE (Last Updated: 1 day ago)8 WeeksSurface Mount3260.37mgEAR99FET General Purpose Power--Single3.1W8 nsSWITCHING3ns2 ns19 ns14A-20V40VNoLead Free20062V-2.39mm6.73mm6.22mmNo SVHC13MOhm
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