FDD8750

Fairchild/ON Semiconductor FDD8750

Part Number:
FDD8750
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2851987-FDD8750
Description:
MOSFET N-CH 25V 6.5A DPAK
ECAD Model:
Datasheet:
FDD8750

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDD8750 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD8750.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    MATTE TIN
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.7W Ta 18W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 2.7A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    425pF @ 13V
  • Current - Continuous Drain (Id) @ 25°C
    6.5A Ta 2.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 10V
  • Drain to Source Voltage (Vdss)
    25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    6.5A
  • Drain-source On Resistance-Max
    63Ohm
  • Pulsed Drain Current-Max (IDM)
    14A
  • DS Breakdown Voltage-Min
    25V
  • Avalanche Energy Rating (Eas)
    19 mJ
  • RoHS Status
    ROHS3 Compliant
Description
FDD8750 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 19 mJ.A device's maximum input capacitance is 425pF @ 13V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 6.5A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 14A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 25V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

FDD8750 Features
the avalanche energy rating (Eas) is 19 mJ
based on its rated peak drain current 14A.
a 25V drain to source voltage (Vdss)


FDD8750 Applications
There are a lot of Rochester Electronics, LLC
FDD8750 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
FDD8750 More Descriptions
N-Channel 25V 6.5A (Ta), 2.7A (Tc) 3.7W (Ta), 18W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk
25V, 2.7A, 40MO, NCH DPAK POWER TRENCH MOSFET
MOSFETs 25V N-Channel PowerTrench MOSFET
MOSFET N-CH 25V 6.5A/2.7A DPAK
MOSFET, N, SMD, TO-252; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:25V; Current, Id Cont:2.7A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:DPAK; Termination Type:SMD; Current, Idm Pulse:14A; No. of Pins:2; Power Dissipation:18mW; Voltage, Vds Max:25V
Product Comparison
The three parts on the right have similar specifications to FDD8750.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    Lead Free
    Published
    Threshold Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Resistance
    View Compare
  • FDD8750
    FDD8750
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    MATTE TIN
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    unknown
    NOT SPECIFIED
    3
    R-PSSO-G2
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    3.7W Ta 18W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    40m Ω @ 2.7A, 10V
    2.5V @ 250μA
    425pF @ 13V
    6.5A Ta 2.7A Tc
    9nC @ 10V
    25V
    4.5V 10V
    ±20V
    6.5A
    63Ohm
    14A
    25V
    19 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDD8876
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    2
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    GULL WING
    -
    -
    -
    -
    R-PSSO-G2
    -
    1
    -
    70W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    8.2m Ω @ 35A, 10V
    2.5V @ 250μA
    1700pF @ 15V
    15A Ta 73A Tc
    47nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    95 mJ
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 week ago)
    10 Weeks
    Surface Mount
    3
    260.37mg
    EAR99
    FET General Purpose Power
    30V
    73A
    Single
    70W
    8 ns
    SWITCHING
    91ns
    37 ns
    44 ns
    73A
    TO-252AA
    20V
    30V
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • FDD86102LZ
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    2
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    GULL WING
    -
    -
    -
    -
    R-PSSO-G2
    -
    1
    -
    3.1W Ta 54W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    22.5m Ω @ 8A, 10V
    3V @ 250μA
    1540pF @ 50V
    8A Ta 35A Tc
    26nC @ 10V
    -
    4.5V 10V
    ±20V
    8A
    0.0225Ohm
    40A
    -
    84 mJ
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Surface Mount
    3
    260.37mg
    EAR99
    FET General Purpose Power
    -
    -
    Single
    54W
    6.6 ns
    SWITCHING
    2.3ns
    2.3 ns
    20 ns
    8A
    -
    20V
    100V
    No
    -
    2006
    1.5V
    1.5 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    -
  • FDD8647L
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    2
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    GULL WING
    -
    -
    -
    -
    R-PSSO-G2
    -
    1
    -
    3.1W Ta 43W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    9m Ω @ 13A, 10V
    3V @ 250μA
    1640pF @ 20V
    14A Ta 42A Tc
    28nC @ 10V
    -
    4.5V 10V
    ±20V
    52A
    -
    -
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Surface Mount
    3
    260.37mg
    EAR99
    FET General Purpose Power
    -
    -
    Single
    3.1W
    8 ns
    SWITCHING
    3ns
    2 ns
    19 ns
    14A
    -
    20V
    40V
    No
    Lead Free
    2006
    2V
    -
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    13MOhm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.