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FDD8451

Fairchild/ON Semiconductor FDD8451

Part Number:
FDD8451
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3554133-FDD8451
Description:
MOSFET N-CH 40V 9A DPAK
ECAD Model:
Datasheet:
FDD8451

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Specifications
Fairchild/ON Semiconductor FDD8451 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD8451.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    30W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    30W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 9A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    990pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    9A Ta 28A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    3ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    28A
  • Threshold Voltage
    2.1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain-source On Resistance-Max
    0.024Ohm
  • Drain to Source Breakdown Voltage
    40V
  • Pulsed Drain Current-Max (IDM)
    78A
  • Avalanche Energy Rating (Eas)
    20 mJ
  • Nominal Vgs
    2.1 V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
With either synchronous or traditional switching PWM controllers, the FDD8451 is an N-Channel MOSFET that has been created expressly to increase the overall efficiency of DC/DC converters. It has been tailored to have a very low rDS(on), a quick switching speed, and a low gate charge.

Features
Fast Switching
High performance trench technology for extremely low rDS(on)
RoHS compliant
Max rDS(on) = 24 m? at VGS = 10 V, ID = 9 A
Max rDS(on) = 30 m?at VGS = 4.5 V, ID = 7 A
Low gate charge

Applications
DC/DC converter
Backlight inverter
Power converters
Automotive electronics
Switch devices
FDD8451 More Descriptions
PowerTrench® MOSFET, N-Channel, 40V, 28A, 24mΩ
N-Channel 40 V 24 mOhm Surface Mount PowerTrench® Mosfet - TO-252-3
Power Field-Effect Transistor, 9A I(D), 40V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 40V, 28A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on).
Product Comparison
The three parts on the right have similar specifications to FDD8451.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Resistance
    Voltage - Rated DC
    Current Rating
    JEDEC-95 Code
    View Compare
  • FDD8451
    FDD8451
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    30W Tc
    Single
    ENHANCEMENT MODE
    30W
    DRAIN
    7 ns
    N-Channel
    SWITCHING
    24m Ω @ 9A, 10V
    3V @ 250μA
    990pF @ 20V
    9A Ta 28A Tc
    20nC @ 10V
    3ns
    4.5V 10V
    ±20V
    2 ns
    19 ns
    28A
    2.1V
    20V
    9A
    0.024Ohm
    40V
    78A
    20 mJ
    2.1 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • FDD8447L
    FDD8447L
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    3.1W Ta 44W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 14A, 10V
    3V @ 250μA
    1970pF @ 20V
    15.2A Ta 50A Tc
    52nC @ 10V
    12ns
    4.5V 10V
    ±20V
    9 ns
    38 ns
    15.2A
    1.9V
    20V
    -
    -
    40V
    -
    -
    1.9 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin
    8.5MOhm
    40V
    54A
    -
    FDD8451 vs FDD8447L
  • FDD8876
    FDD8876
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    10 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    8.2m Ω @ 35A, 10V
    2.5V @ 250μA
    1700pF @ 15V
    15A Ta 73A Tc
    47nC @ 10V
    91ns
    4.5V 10V
    ±20V
    37 ns
    44 ns
    73A
    -
    20V
    -
    -
    30V
    -
    95 mJ
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    30V
    73A
    TO-252AA
    FDD8451 vs FDD8876
  • FDD86102LZ
    FDD86102LZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    3.1W Ta 54W Tc
    Single
    ENHANCEMENT MODE
    54W
    DRAIN
    6.6 ns
    N-Channel
    SWITCHING
    22.5m Ω @ 8A, 10V
    3V @ 250μA
    1540pF @ 50V
    8A Ta 35A Tc
    26nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    2.3 ns
    20 ns
    8A
    1.5V
    20V
    8A
    0.0225Ohm
    100V
    40A
    84 mJ
    1.5 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    FDD8451 vs FDD86102LZ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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