Nexperia USA Inc. BSH111BKR

Name: BSH111BKR
Brand: Nexperia USA Inc.
SKU: 2478939-BSH111BKR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSH111BKR

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478939-BSH111BKR

Description:: MOSFET N-CH 55V SOT-23

ECAD Model:

Datasheet:: BSH111BKR

Specifications

Nexperia USA Inc. BSH111BKR technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH111BKR.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
302mW Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
302mW
Turn On Delay Time
8.3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
30pF @ 30V
Current - Continuous Drain (Id) @ 25°C
210mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.5nC @ 4.5V
Rise Time
8.4ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V
Vgs (Max)
±10V
Fall Time (Typ)
4.8 ns
Turn-Off Delay Time
12.6 ns
Continuous Drain Current (ID)
210mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
10V
Drain-source On Resistance-Max
4Ohm
Drain to Source Breakdown Voltage
55V
Max Junction Temperature (Tj)
150°C
Ambient Temperature Range High
150°C
Feedback Cap-Max (Crss)
7 pF
Height
1.1mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSH111BKR Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 30pF @ 30V.This device has a continuous drain current (ID) of [210mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 12.6 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (4.5V).

BSH111BKR Features
a continuous drain current (ID) of 210mA
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 12.6 ns
a threshold voltage of 1V

BSH111BKR Applications
There are a lot of Nexperia USA Inc.
BSH111BKR applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

BSH111BKR More Descriptions

Trans MOSFET N-CH 55V 0.21A 3-Pin SOT-23 T/R / MOSFET N-CH 55V SOT-23
BSH111 Series 55 V 364 mW 0.5 nC N-Channel Surface Mount MOSFET - SOT-23
MOSFET, N-CH, 55V, 0.21A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Source Voltage Vds:55V; On Resistance
Small Signal Field-Effect Transistor, 0.21A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CH, 55V, 0.21A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 210mA; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 302mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Product Comparison

The three parts on the right have similar specifications to BSH111BKR.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Number of Channels

Power Dissipation-Max

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Ambient Temperature Range High

Feedback Cap-Max (Crss)

Height

RoHS Status

Lead Free

Surface Mount

JESD-609 Code

ECCN Code

Terminal Finish

HTS Code

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Series

Additional Feature

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Element Configuration

Max Dual Supply Voltage

Radiation Hardening

DS Breakdown Voltage-Min

View Compare
BSH111BKR

Nexperia USA Inc.

4 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2014

Active

1 (Unlimited)

3

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

1

302mW Ta

ENHANCEMENT MODE

302mW

8.3 ns

N-Channel

SWITCHING

4 Ω @ 200mA, 4.5V

1.3V @ 250μA

30pF @ 30V

210mA Ta

0.5nC @ 4.5V

8.4ns

4.5V

±10V

4.8 ns

12.6 ns

210mA

1V

10V

4Ohm

55V

150°C

150°C

7 pF

1.1mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSH103,215

Nexperia USA Inc.

6 Weeks

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1998

Not For New Designs

1 (Unlimited)

3

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

-

540mW Ta

ENHANCEMENT MODE

750mW

-

N-Channel

SWITCHING

400m Ω @ 500mA, 4.5V

400mV @ 1mA (Min)

83pF @ 24V

850mA Ta

2.1nC @ 4.5V

-

2.5V

±8V

-

-

850mA

-

-

0.5Ohm

-

-

-

-

-

ROHS3 Compliant

-

YES

e3

EAR99

Tin (Sn)

8541.21.00.75

30V

0.85A

-

-

-

-

-

-

-

-

BSH111BKR vs BSH103,215
BSH111,235

Nexperia USA Inc.

-

Tin

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

1997

Obsolete

1 (Unlimited)

3

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

-

-

830mW Tc

ENHANCEMENT MODE

830mW

-

N-Channel

SWITCHING

4 Ω @ 500mA, 4.5V

1.3V @ 1mA

40pF @ 10V

335mA Ta

1nC @ 8V

-

1.8V 4.5V

±10V

-

-

335mA

-

10V

4Ohm

55V

-

-

10 pF

-

RoHS Compliant

-

YES

e3

EAR99

-

8541.29.00.75

-

-

TrenchMOS™

FAST SWITCHING

260

30

Single

55V

No

-

BSH111BKR vs BSH111,235
BSH114,215

Nexperia USA Inc.

4 Weeks

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1997

Active

1 (Unlimited)

3

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

-

360mW Ta 830mW Tc

ENHANCEMENT MODE

830mW

-

N-Channel

SWITCHING

500m Ω @ 500mA, 10V

4V @ 1mA

138pF @ 25V

500mA Ta

4.6nC @ 10V

-

10V

±20V

-

-

850mA

-

-

0.5Ohm

-

-

-

-

-

ROHS3 Compliant

-

YES

e3

EAR99

Tin (Sn)

8541.29.00.75

100V

0.85A

TrenchMOS™

-

260

30

-

-

-

100V

BSH111BKR vs BSH114,215