Nexperia USA Inc. BSH103,215

Name: BSH103,215
Brand: Nexperia USA Inc.
SKU: 3069980-BSH103,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSH103,215

Manufacturer:: Nexperia USA Inc.

Ventron No:: 3069980-BSH103,215

Description:: MOSFET N-CH 30V 0.85A SOT23

ECAD Model:

Datasheet:: BSH103,215

Specifications

Nexperia USA Inc. BSH103,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH103,215.

Factory Lead Time
6 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.75
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
540mW Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
750mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
400m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id
400mV @ 1mA (Min)
Input Capacitance (Ciss) (Max) @ Vds
83pF @ 24V
Current - Continuous Drain (Id) @ 25°C
850mA Ta
Gate Charge (Qg) (Max) @ Vgs
2.1nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
2.5V
Vgs (Max)
±8V
Continuous Drain Current (ID)
850mA
Drain Current-Max (Abs) (ID)
0.85A
Drain-source On Resistance-Max
0.5Ohm
RoHS Status
ROHS3 Compliant

Description

BSH103,215 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 83pF @ 24V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 850mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.85A.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (2.5V), this device helps reduce its overall power consumption.

BSH103,215 Features
a continuous drain current (ID) of 850mA
a 30V drain to source voltage (Vdss)

BSH103,215 Applications
There are a lot of Nexperia USA Inc.
BSH103,215 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

BSH103,215 More Descriptions

BSH103 Series 30 V 850 mA 400 mOhm N-Ch Enhancement Mode MOS Transistor - SOT-23
MOSFET Operating temperature: -55... 150 °C Housing type: SOT-23 Polarity: N Power dissipation: 500 mW
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:850mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):400mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:400mV ;RoHS Compliant: Yes
MOSFET, N, 30V, 0.85A, SOT-23, REEL 3K; Transistor Polarity:N Channel; Continuous Drain Current Id:850mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:750mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236AB; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
MOSFET, N, SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:0.85A; Resistance, Rds On:0.5ohm; Voltage, Vgs Rds on Measurement:2.5V; Voltage, Vgs th Typ:0.4V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:0.92A; Current, Idm Pulse:3.4A; No. of Pins:3; Power, Pd:0.5W; Power, Ptot:0.5W; Quantity, Reel:3000; Temperature, Current:25°C; Transistors, No. of:1; Voltage, Vds Max:30V; Width, Tape:8mm

Product Comparison

The three parts on the right have similar specifications to BSH103,215.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

RoHS Status

Contact Plating

Series

Additional Feature

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Element Configuration

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Feedback Cap-Max (Crss)

Radiation Hardening

Subcategory

JESD-30 Code

Qualification Status

JEDEC-95 Code

DS Breakdown Voltage-Min

Mount

Number of Channels

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Max Junction Temperature (Tj)

Ambient Temperature Range High

Height

Lead Free

View Compare
BSH103,215

Nexperia USA Inc.

6 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1998

e3

Not For New Designs

1 (Unlimited)

3

EAR99

Tin (Sn)

8541.21.00.75

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

540mW Ta

ENHANCEMENT MODE

750mW

N-Channel

SWITCHING

400m Ω @ 500mA, 4.5V

400mV @ 1mA (Min)

83pF @ 24V

850mA Ta

2.1nC @ 4.5V

30V

2.5V

±8V

850mA

0.85A

0.5Ohm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSH111,235

Nexperia USA Inc.

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

1997

e3

Obsolete

1 (Unlimited)

3

EAR99

-

8541.29.00.75

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

-

830mW Tc

ENHANCEMENT MODE

830mW

N-Channel

SWITCHING

4 Ω @ 500mA, 4.5V

1.3V @ 1mA

40pF @ 10V

335mA Ta

1nC @ 8V

-

1.8V 4.5V

±10V

335mA

-

4Ohm

RoHS Compliant

Tin

TrenchMOS™

FAST SWITCHING

260

30

Single

10V

55V

55V

10 pF

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSH103,215 vs BSH111,235
BSH112,235

NXP USA Inc.

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

-

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

1997

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

830mW Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

5 Ω @ 500mA, 10V

2V @ 1mA

40pF @ 10V

300mA Ta

-

60V

4.5V 10V

±15V

-

0.3A

5Ohm

ROHS3 Compliant

-

TrenchMOS™

LOGIC LEVEL COMPATIBLE

260

40

-

-

-

-

10 pF

-

FET General Purpose Power

R-PDSO-G3

Not Qualified

TO-236AB

60V

-

-

-

-

-

-

-

-

-

-

-

BSH103,215 vs BSH112,235
BSH111BKR

Nexperia USA Inc.

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2014

-

Active

1 (Unlimited)

3

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

302mW Ta

ENHANCEMENT MODE

302mW

N-Channel

SWITCHING

4 Ω @ 200mA, 4.5V

1.3V @ 250μA

30pF @ 30V

210mA Ta

0.5nC @ 4.5V

-

4.5V

±10V

210mA

-

4Ohm

ROHS3 Compliant

Tin

-

-

-

-

-

10V

-

55V

7 pF

-

-

-

-

-

-

Surface Mount

1

8.3 ns

8.4ns

4.8 ns

12.6 ns

1V

150°C

150°C

1.1mm

Lead Free

BSH103,215 vs BSH111BKR