Nexperia USA Inc. BSH105,215

Name: BSH105,215
Brand: Nexperia USA Inc.
SKU: 3585932-BSH105,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSH105,215

Manufacturer:: Nexperia USA Inc.

Ventron No:: 3585932-BSH105,215

Description:: MOSFET N-CH 20V 1.05A SOT23

ECAD Model:

Datasheet:: BSH105,215

Specifications

Nexperia USA Inc. BSH105,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH105,215.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
HTS Code
8541.21.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
417mW Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
417mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
200m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id
570mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
152pF @ 16V
Current - Continuous Drain (Id) @ 25°C
1.05A Ta
Gate Charge (Qg) (Max) @ Vgs
3.9nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Continuous Drain Current (ID)
1.05A
Drain-source On Resistance-Max
0.25Ohm
DS Breakdown Voltage-Min
20V
RoHS Status
ROHS3 Compliant

Description

BSH105,215 Overview
A device's maximum input capacitance is 152pF @ 16V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.05A for this device. Drain current refers to the capacity of the device to conduct continuous current.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

BSH105,215 Features
a continuous drain current (ID) of 1.05A
a 20V drain to source voltage (Vdss)

BSH105,215 Applications
There are a lot of Nexperia USA Inc.
BSH105,215 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

BSH105,215 More Descriptions

BSH105 Series 20 V 200 mOhm 417 mW N-Ch Enhancement Mode MOS Transistor - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 170 mW
MOSFET N-CH 20V 1.05A SOT23; Transistor Polarity:N Channel; On State Resistance:200mohm; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; Case Style:SOT-23; Cont Current Id:0.6A; Termination Type:SMD; ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to BSH105,215.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Series

Subcategory

JESD-30 Code

Qualification Status

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Feedback Cap-Max (Crss)

Contact Plating

Mount

Number of Channels

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Ambient Temperature Range High

Height

Lead Free

View Compare
BSH105,215

Nexperia USA Inc.

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1998

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

LOGIC LEVEL COMPATIBLE

8541.21.00.95

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

3

1

SINGLE WITH BUILT-IN DIODE

417mW Ta

ENHANCEMENT MODE

417mW

N-Channel

SWITCHING

200m Ω @ 600mA, 4.5V

570mV @ 1mA

152pF @ 16V

1.05A Ta

3.9nC @ 4.5V

20V

1.8V 4.5V

±8V

1.05A

0.25Ohm

20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSH112,235

NXP USA Inc.

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

-

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

1997

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

SINGLE WITH BUILT-IN DIODE

830mW Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

5 Ω @ 500mA, 10V

2V @ 1mA

40pF @ 10V

300mA Ta

-

60V

4.5V 10V

±15V

-

5Ohm

60V

ROHS3 Compliant

TrenchMOS™

FET General Purpose Power

R-PDSO-G3

Not Qualified

TO-236AB

0.3A

10 pF

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSH105,215 vs BSH112,235
BSH114,215

Nexperia USA Inc.

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1997

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

-

8541.29.00.75

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

SINGLE WITH BUILT-IN DIODE

360mW Ta 830mW Tc

ENHANCEMENT MODE

830mW

N-Channel

SWITCHING

500m Ω @ 500mA, 10V

4V @ 1mA

138pF @ 25V

500mA Ta

4.6nC @ 10V

100V

10V

±20V

850mA

0.5Ohm

100V

ROHS3 Compliant

TrenchMOS™

-

-

-

-

0.85A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSH105,215 vs BSH114,215
BSH111BKR

Nexperia USA Inc.

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2014

-

Active

1 (Unlimited)

3

-

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

3

1

SINGLE WITH BUILT-IN DIODE

302mW Ta

ENHANCEMENT MODE

302mW

N-Channel

SWITCHING

4 Ω @ 200mA, 4.5V

1.3V @ 250μA

30pF @ 30V

210mA Ta

0.5nC @ 4.5V

-

4.5V

±10V

210mA

4Ohm

-

ROHS3 Compliant

-

-

-

-

-

-

7 pF

Tin

Surface Mount

1

8.3 ns

8.4ns

4.8 ns

12.6 ns

1V

10V

55V

150°C

150°C

1.1mm

Lead Free

BSH105,215 vs BSH111BKR