Nexperia USA Inc. BSH103,235

Name: BSH103,235
Brand: Nexperia USA Inc.
SKU: 2477982-BSH103,235
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSH103,235

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2477982-BSH103,235

Description:: MOSFET N-CH 30V 0.85A SOT23

ECAD Model:

Datasheet:: BSH103,235

Specifications

Nexperia USA Inc. BSH103,235 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH103,235.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.75
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Power Dissipation-Max
540mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
2.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
400m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id
400mV @ 1mA (Min)
Input Capacitance (Ciss) (Max) @ Vds
83pF @ 24V
Current - Continuous Drain (Id) @ 25°C
850mA Ta
Gate Charge (Qg) (Max) @ Vgs
2.1nC @ 4.5V
Rise Time
3.5ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V
Vgs (Max)
±8V
Fall Time (Typ)
3.5 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
850mA
Gate to Source Voltage (Vgs)
8V
Max Dual Supply Voltage
30V
Drain Current-Max (Abs) (ID)
0.85A
Drain-source On Resistance-Max
0.5Ohm
Drain to Source Breakdown Voltage
30V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BSH103,235 Overview
A device's maximum input capacitance is 83pF @ 24V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 850mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.Its drain current is 0.85A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (2.5V) to reduce its overall power consumption.

BSH103,235 Features
a continuous drain current (ID) of 850mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20 ns

BSH103,235 Applications
There are a lot of Nexperia USA Inc.
BSH103,235 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

BSH103,235 More Descriptions

BSH103 Series 30 V 400 mOhm 0.5 W N-Ch Enhancement Mode MOS Transistor - SOT-23
30V 850mA 400m¦¸@4.5V,500mA 540mW 400mV@1mA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
BSH103 - 30 V, N-channel Trench MOSFET
Trans Mosfet N-Ch 30V 0.85A 3-Pin To-236Ab T/R
Small Signal Field-Effect Transistor, 0.85A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Small Signal Field-Effect Transistors

Product Comparison

The three parts on the right have similar specifications to BSH103,235.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Radiation Hardening

RoHS Status

Series

Terminal Finish

Additional Feature

Configuration

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

View Compare
BSH103,235

Nexperia USA Inc.

4 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1998

e3

Active

1 (Unlimited)

3

EAR99

8541.21.00.75

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

540mW Ta

Single

ENHANCEMENT MODE

500mW

2.5 ns

N-Channel

SWITCHING

400m Ω @ 500mA, 4.5V

400mV @ 1mA (Min)

83pF @ 24V

850mA Ta

2.1nC @ 4.5V

3.5ns

2.5V

±8V

3.5 ns

20 ns

850mA

8V

30V

0.85A

0.5Ohm

30V

No

ROHS3 Compliant

-

-

-

-

-

-

-

-
BSH111,215

Nexperia USA Inc.

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

1997

e3

Obsolete

1 (Unlimited)

3

EAR99

8541.29.00.75

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

830mW Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

4 Ω @ 500mA, 4.5V

1.3V @ 1mA

40pF @ 10V

335mA Ta

1nC @ 8V

-

1.8V 4.5V

±10V

-

-

335mA

-

-

-

4Ohm

-

-

RoHS Compliant

TrenchMOS™

Tin (Sn)

FAST SWITCHING

SINGLE WITH BUILT-IN DIODE

55V

55V

10 pF

BSH103,235 vs BSH111,215
BSH103,215

Nexperia USA Inc.

6 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1998

e3

Not For New Designs

1 (Unlimited)

3

EAR99

8541.21.00.75

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

3

1

540mW Ta

-

ENHANCEMENT MODE

750mW

-

N-Channel

SWITCHING

400m Ω @ 500mA, 4.5V

400mV @ 1mA (Min)

83pF @ 24V

850mA Ta

2.1nC @ 4.5V

-

2.5V

±8V

-

-

850mA

-

-

0.85A

0.5Ohm

-

-

ROHS3 Compliant

-

Tin (Sn)

-

SINGLE WITH BUILT-IN DIODE

30V

-

-

BSH103,235 vs BSH103,215
BSH114,215

Nexperia USA Inc.

4 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1997

e3

Active

1 (Unlimited)

3

EAR99

8541.29.00.75

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

360mW Ta 830mW Tc

-

ENHANCEMENT MODE

830mW

-

N-Channel

SWITCHING

500m Ω @ 500mA, 10V

4V @ 1mA

138pF @ 25V

500mA Ta

4.6nC @ 10V

-

10V

±20V

-

-

850mA

-

-

0.85A

0.5Ohm

-

-

ROHS3 Compliant

TrenchMOS™

Tin (Sn)

-

SINGLE WITH BUILT-IN DIODE

100V

100V

-

BSH103,235 vs BSH114,215