Microchip Technology 2N7008-G
- Part Number:
- 2N7008-G
- Manufacturer:
- Microchip Technology
- Ventron No:
- 2478855-2N7008-G
- Description:
- MOSFET N-CH 60V 0.23A TO92-3
- Datasheet:
- 2N7008-G
Microchip Technology 2N7008-G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology 2N7008-G.
- Factory Lead Time16 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1W
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C230mA Tj
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±30V
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)230mA
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage60V
- Feedback Cap-Max (Crss)5 pF
- Height5.33mm
- Length5.21mm
- Width4.19mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N7008-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 230mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
2N7008-G Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
2N7008-G Applications
There are a lot of Microchip Technology
2N7008-G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 230mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
2N7008-G Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
2N7008-G Applications
There are a lot of Microchip Technology
2N7008-G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
2N7008-G More Descriptions
2N7008 Series 60 V 7.5 Ohm N-Channel Enhancement-Mode Vertical DMOS FETs - TO-92
Microchip 2N7008-G N-channel MOSFET Transistor, 0.23 A, 60 V, 3-Pin TO-92 | Microchip Technology Inc. 2N7008-G
Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 Bag
Mosfet, N-Ch, 60V, 0.23A, To-92; Transistor Polarity:N Channel; Continuous Drain Current Id:230Ma; Drain Source Voltage Vds:60V; On Resistance Rds(On):7.5Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Microchip 2N7008-G
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Microchip 2N7008-G N-channel MOSFET Transistor, 0.23 A, 60 V, 3-Pin TO-92 | Microchip Technology Inc. 2N7008-G
Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 Bag
Mosfet, N-Ch, 60V, 0.23A, To-92; Transistor Polarity:N Channel; Continuous Drain Current Id:230Ma; Drain Source Voltage Vds:60V; On Resistance Rds(On):7.5Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Microchip 2N7008-G
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
The three parts on the right have similar specifications to 2N7008-G.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeLifecycle StatusSurface MountPbfree CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Drain Current-Max (Abs) (ID)Supplier Device PackageBase Part NumberDrain to Source Voltage (Vdss)Manufacturer Package IdentifierResistanceTerminal FinishAdditional FeatureREACH SVHCView Compare
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2N7008-G16 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk2008e3Active1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMWIRE111W TcSingleENHANCEMENT MODE1W20 nsN-ChannelSWITCHING7.5 Ω @ 500mA, 10V2.5V @ 250μA50pF @ 25V230mA Tj5V 10V±30V20 ns230mA30V60V5 pF5.33mm5.21mm4.19mmNoROHS3 CompliantLead Free--------------------
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-Tin-Surface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)2007e3Obsolete1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING1-300mW TjSingleENHANCEMENT MODE300mW1.7 nsN-ChannelSWITCHING2.5 Ω @ 240mA, 10V2.5V @ 250μA26.7pF @ 25V260mA Ta4.5V 10V±20V4.8 ns310mA20V60V-----RoHS CompliantLead FreeLAST SHIPMENTS (Last Updated: 1 week ago)YESyes260403Not Qualified0.81nC @ 5V1.2ns1.2 ns0.26A--------
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---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2015-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----200mW Ta----N-Channel-7.5Ohm @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta5V 10V±20V----------------------SOT-23 (TO-236AB)2N700260V-----
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19 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3Active1 (Unlimited)3EAR99FET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING11370mW TaSingleENHANCEMENT MODE540mW7 nsN-ChannelSWITCHING3 Ω @ 250mA, 10V2.5V @ 250μA50pF @ 25V250mA Ta4.5V 10V±20V11 ns250mA20V60V5 pF1mm2.9mm1.3mmNoROHS3 CompliantLead Free--yes260403-0.22nC @ 4.5V--0.24A---2N7002E-7-F4OhmMatte Tin (Sn)LOW THRESHOLDNo SVHC
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