2N7008-G

Microchip Technology 2N7008-G

Part Number:
2N7008-G
Manufacturer:
Microchip Technology
Ventron No:
2478855-2N7008-G
Description:
MOSFET N-CH 60V 0.23A TO92-3
ECAD Model:
Datasheet:
2N7008-G

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Specifications
Microchip Technology 2N7008-G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology 2N7008-G.
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1W
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    230mA Tj
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±30V
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    230mA
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    60V
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    5.33mm
  • Length
    5.21mm
  • Width
    4.19mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N7008-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 230mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

2N7008-G Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns


2N7008-G Applications
There are a lot of Microchip Technology
2N7008-G applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
2N7008-G More Descriptions
2N7008 Series 60 V 7.5 Ohm N-Channel Enhancement-Mode Vertical DMOS FETs - TO-92
Microchip 2N7008-G N-channel MOSFET Transistor, 0.23 A, 60 V, 3-Pin TO-92 | Microchip Technology Inc. 2N7008-G
Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 Bag
Mosfet, N-Ch, 60V, 0.23A, To-92; Transistor Polarity:N Channel; Continuous Drain Current Id:230Ma; Drain Source Voltage Vds:60V; On Resistance Rds(On):7.5Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Microchip 2N7008-G
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Product Comparison
The three parts on the right have similar specifications to 2N7008-G.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Surface Mount
    Pbfree Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Drain Current-Max (Abs) (ID)
    Supplier Device Package
    Base Part Number
    Drain to Source Voltage (Vdss)
    Manufacturer Package Identifier
    Resistance
    Terminal Finish
    Additional Feature
    REACH SVHC
    View Compare
  • 2N7008-G
    2N7008-G
    16 Weeks
    Tin
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2008
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    BOTTOM
    WIRE
    1
    1
    1W Tc
    Single
    ENHANCEMENT MODE
    1W
    20 ns
    N-Channel
    SWITCHING
    7.5 Ω @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    230mA Tj
    5V 10V
    ±30V
    20 ns
    230mA
    30V
    60V
    5 pF
    5.33mm
    5.21mm
    4.19mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002ET3G
    -
    Tin
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    -
    300mW Tj
    Single
    ENHANCEMENT MODE
    300mW
    1.7 ns
    N-Channel
    SWITCHING
    2.5 Ω @ 240mA, 10V
    2.5V @ 250μA
    26.7pF @ 25V
    260mA Ta
    4.5V 10V
    ±20V
    4.8 ns
    310mA
    20V
    60V
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    LAST SHIPMENTS (Last Updated: 1 week ago)
    YES
    yes
    260
    40
    3
    Not Qualified
    0.81nC @ 5V
    1.2ns
    1.2 ns
    0.26A
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002_NB9G002
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    200mW Ta
    -
    -
    -
    -
    N-Channel
    -
    7.5Ohm @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    115mA Ta
    5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SOT-23 (TO-236AB)
    2N7002
    60V
    -
    -
    -
    -
    -
  • 2N7002E-7-F
    19 Weeks
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1
    370mW Ta
    Single
    ENHANCEMENT MODE
    540mW
    7 ns
    N-Channel
    SWITCHING
    3 Ω @ 250mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    250mA Ta
    4.5V 10V
    ±20V
    11 ns
    250mA
    20V
    60V
    5 pF
    1mm
    2.9mm
    1.3mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    yes
    260
    40
    3
    -
    0.22nC @ 4.5V
    -
    -
    0.24A
    -
    -
    -
    2N7002E-7-F
    4Ohm
    Matte Tin (Sn)
    LOW THRESHOLD
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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