Fairchild/ON Semiconductor 2N7002MTF
- Part Number:
- 2N7002MTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2490409-2N7002MTF
- Description:
- MOSFET N-CH 60V 0.115A SOT-23
- Datasheet:
- 2N7000/02, NDS7002A Datasheet
Fairchild/ON Semiconductor 2N7002MTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N7002MTF.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max200mW Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C115mA Tc
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)0.115A
- Drain-source On Resistance-Max5Ohm
- DS Breakdown Voltage-Min60V
- Feedback Cap-Max (Crss)5 pF
- RoHS StatusROHS3 Compliant
2N7002MTF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 0.115A.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002MTF Features
a 60V drain to source voltage (Vdss)
2N7002MTF Applications
There are a lot of Rochester Electronics, LLC
2N7002MTF applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 0.115A.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002MTF Features
a 60V drain to source voltage (Vdss)
2N7002MTF Applications
There are a lot of Rochester Electronics, LLC
2N7002MTF applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
2N7002MTF More Descriptions
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.115A SOT-23
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 115mA Tc 115mA 200mW 20ns
N-Channel 60 V 5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-23
Small Signal Field-Effect Transistor, 0.115m/Cel, Surface Mount, 0603
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N, SMD, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:200mA; Package / Case:SOT-23; Power Dissipation Pd:200mW; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 115mA Tc 115mA 200mW 20ns
N-Channel 60 V 5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-23
Small Signal Field-Effect Transistor, 0.115m/Cel, Surface Mount, 0603
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N, SMD, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:200mA; Package / Case:SOT-23; Power Dissipation Pd:200mW; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to 2N7002MTF.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)RoHS StatusContinuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)Supplier Device PackagePublishedBase Part NumberFactory Lead TimeContact PlatingNumber of PinsSeriesAdditional FeatureElement ConfigurationPower DissipationCase ConnectionTurn On Delay TimeGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltageRadiation HardeningLead FreeView Compare
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2N7002MTFSurface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)DUALGULL WING260303R-PDSO-G3COMMERCIAL1SINGLE WITH BUILT-IN DIODE200mW TaENHANCEMENT MODEN-ChannelSWITCHING7.5 Ω @ 500mA, 10V3V @ 1mA50pF @ 25V115mA Tc60V5V 10V±20V0.115A5Ohm60V5 pFROHS3 Compliant-------------------------
-
-SOT-323(SC-70)---Tape & Reel (TR)------------------N Channel-5Ω @ 500mA,10V2.5V @ 250uA--60V------RoHS Compliant115mA200mW----------------------
-
Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)---------200mW Ta-N-Channel-7.5Ohm @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta60V5V 10V±20V-------SOT-23 (TO-236AB)20152N7002-------------------
-
Surface MountSC-101, SOT-883YESSILICON150°C TJTape & Reel (TR)e3-Last Time Buy1 (Unlimited)3-MOSFET (Metal Oxide)BOTTOM---3--1-360mW TaENHANCEMENT MODEN-ChannelSWITCHING1.6 Ω @ 500mA, 10V2.1V @ 250μA50pF @ 10V450mA Ta-10V±20V0.45A---ROHS3 Compliant---2010-20 WeeksTin3Automotive, AEC-Q101, TrenchMOS™LOGIC LEVEL COMPATIBLESingle715mWDRAIN5 ns0.6nC @ 4.5V6ns7 ns12 ns450mA20V60V60VNoLead Free
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