ON Semiconductor 2N7002LT1

Name: 2N7002LT1
Brand: ON Semiconductor
SKU: 2488813-2N7002LT1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7002LT1

Manufacturer:: ON Semiconductor

Ventron No:: 2488813-2N7002LT1

Description:: MOSFET N-CH 60V 0.115A SOT-23

ECAD Model:

Datasheet:: 2N7002L

Specifications

ON Semiconductor 2N7002LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N7002LT1.

Surface Mount
YES
Subcategory
FET General Purpose Power
Operating Temperature (Max)
150°C
Configuration
Single
Operating Mode
ENHANCEMENT MODE
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (Abs) (ID)
0.115A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
0.2W
RoHS Status
Non-RoHS Compliant

Description

2N7002LT1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet 2N7002LT1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of 2N7002LT1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

2N7002LT1 More Descriptions

Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
MOSFETs- Power and Small Signal 60V 115mA N-Channel No-Cancel/No-Return
60 V, 115 mA, N-Channel SOT-23
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
French Electronic Distributor since 1988
Small Signal Field-Effect Transistors

Product Comparison

The three parts on the right have similar specifications to 2N7002LT1.

Image

Part Number

Manufacturer

Surface Mount

Subcategory

Operating Temperature (Max)

Configuration

Operating Mode

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

FET Technology

Power Dissipation-Max (Abs)

RoHS Status

Lifecycle Status

Contact Plating

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Factory Lead Time

Series

Additional Feature

Case Connection

Max Dual Supply Voltage

Radiation Hardening

Mount

Weight

Manufacturer Package Identifier

Resistance

Terminal Finish

Number of Channels

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

View Compare
2N7002LT1

ON Semiconductor

YES

FET General Purpose Power

150°C

Single

ENHANCEMENT MODE

N-CHANNEL

0.115A

METAL-OXIDE SEMICONDUCTOR

0.2W

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7002ET3G

ON Semiconductor

YES

FET General Purpose Power

-

-

ENHANCEMENT MODE

-

0.26A

-

-

RoHS Compliant

LAST SHIPMENTS (Last Updated: 1 week ago)

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

Not Qualified

1

300mW Tj

Single

300mW

1.7 ns

N-Channel

SWITCHING

2.5 Ω @ 240mA, 10V

2.5V @ 250μA

26.7pF @ 25V

260mA Ta

0.81nC @ 5V

1.2ns

4.5V 10V

±20V

1.2 ns

4.8 ns

310mA

20V

60V

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N7002LT1 vs 2N7002ET3G
2N7002BKM,315

Nexperia USA Inc.

YES

-

-

-

ENHANCEMENT MODE

-

0.45A

-

-

ROHS3 Compliant

-

Tin

Surface Mount

SC-101, SOT-883

3

SILICON

150°C TJ

Tape & Reel (TR)

2010

e3

-

Last Time Buy

1 (Unlimited)

3

-

MOSFET (Metal Oxide)

BOTTOM

-

-

-

3

-

1

360mW Ta

Single

715mW

5 ns

N-Channel

SWITCHING

1.6 Ω @ 500mA, 10V

2.1V @ 250μA

50pF @ 10V

450mA Ta

0.6nC @ 4.5V

6ns

10V

±20V

7 ns

12 ns

450mA

20V

60V

Lead Free

20 Weeks

Automotive, AEC-Q101, TrenchMOS™

LOGIC LEVEL COMPATIBLE

DRAIN

60V

No

-

-

-

-

-

-

-

-

-

-

-

2N7002LT1 vs 2N7002BKM,315
2N7002E-7-F

Diodes Incorporated

-

FET General Purpose Powers

-

-

ENHANCEMENT MODE

-

0.24A

-

-

ROHS3 Compliant

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

-

1

370mW Ta

Single

540mW

7 ns

N-Channel

SWITCHING

3 Ω @ 250mA, 10V

2.5V @ 250μA

50pF @ 25V

250mA Ta

0.22nC @ 4.5V

-

4.5V 10V

±20V

-

11 ns

250mA

20V

60V

Lead Free

19 Weeks

-

LOW THRESHOLD

-

-

No

Surface Mount

7.994566mg

2N7002E-7-F

4Ohm

Matte Tin (Sn)

1

5 pF

1mm

2.9mm

1.3mm

No SVHC

2N7002LT1 vs 2N7002E-7-F