Vishay Siliconix 2N7002K-T1-E3

Name: 2N7002K-T1-E3
Brand: Vishay Siliconix
SKU: 2477887-2N7002K-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7002K-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2477887-2N7002K-T1-E3

Description:: MOSFET N-CH 60V 300MA SOT-23

ECAD Model:

Datasheet:: 2N7002K-T1-E3

Specifications

Vishay Siliconix 2N7002K-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix 2N7002K-T1-E3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3 (TO-236)
Weight
1.437803g
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
2Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Power Dissipation
350mW
Turn On Delay Time
25 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
30pF @ 25V
Current - Continuous Drain (Id) @ 25°C
300mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
300mA
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Input Capacitance
30pF
Max Junction Temperature (Tj)
150°C
Drain to Source Resistance
2Ohm
Rds On Max
2 Ω
Nominal Vgs
2 V
Height
1.12mm
Length
3.0226mm
Width
1.397mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N7002K-T1-E3 Overview
The maximum input capacitance of this device is 30pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 300mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

2N7002K-T1-E3 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2Ohm
a threshold voltage of 2.5V
a 60V drain to source voltage (Vdss)

2N7002K-T1-E3 Applications
There are a lot of Vishay Siliconix
2N7002K-T1-E3 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

2N7002K-T1-E3 More Descriptions

Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 300MA SOT-23
2N7002K Series N-Channel 60 V 2 Ohms Surface Mount Power Mosfet - SOT-23-3
VISHAY - 2N7002K-T1-E3 - N CHANNEL MOSFET, 60V, 0.5A, SOT-23
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
N CH MOSFET, 60V, 0.5A, SOT-23; Transist; N CH MOSFET, 60V, 0.5A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200mW; No. of Pins:3
Mosfet, N Channel, 60V, 2Ohm, 300Ma, To-236, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:350Mw Rohs Compliant: No |Vishay 2N7002K-T1-E3.

Product Comparison

The three parts on the right have similar specifications to 2N7002K-T1-E3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Max Junction Temperature (Tj)

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Contact Plating

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Operating Mode

Transistor Application

Rise Time

Fall Time (Typ)

Drain Current-Max (Abs) (ID)

Factory Lead Time

Additional Feature

Case Connection

Max Dual Supply Voltage

Manufacturer Package Identifier

Terminal Finish

Feedback Cap-Max (Crss)

View Compare
2N7002K-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3 (TO-236)

1.437803g

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

Active

1 (Unlimited)

2Ohm

150°C

-55°C

MOSFET (Metal Oxide)

1

1

350mW Ta

Single

350mW

25 ns

N-Channel

2Ohm @ 500mA, 10V

2.5V @ 250μA

30pF @ 25V

300mA Ta

0.6nC @ 4.5V

60V

4.5V 10V

±20V

35 ns

300mA

2.5V

20V

60V

30pF

150°C

2Ohm

2 Ω

2 V

1.12mm

3.0226mm

1.397mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7002ET3G

ON Semiconductor

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2007

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

-

300mW Tj

Single

300mW

1.7 ns

N-Channel

2.5 Ω @ 240mA, 10V

2.5V @ 250μA

26.7pF @ 25V

260mA Ta

0.81nC @ 5V

-

4.5V 10V

±20V

4.8 ns

310mA

-

20V

60V

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

Lead Free

LAST SHIPMENTS (Last Updated: 1 week ago)

Tin

YES

SILICON

e3

yes

3

EAR99

FET General Purpose Power

DUAL

GULL WING

260

40

3

Not Qualified

ENHANCEMENT MODE

SWITCHING

1.2ns

1.2 ns

0.26A

-

-

-

-

-

-

-

2N7002K-T1-E3 vs 2N7002ET3G
2N7002BKM,315

Nexperia USA Inc.

-

Surface Mount

SC-101, SOT-883

3

-

-

150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2010

Last Time Buy

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

-

360mW Ta

Single

715mW

5 ns

N-Channel

1.6 Ω @ 500mA, 10V

2.1V @ 250μA

50pF @ 10V

450mA Ta

0.6nC @ 4.5V

-

10V

±20V

12 ns

450mA

-

20V

60V

-

-

-

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

Tin

YES

SILICON

e3

-

3

-

-

BOTTOM

-

-

-

3

-

ENHANCEMENT MODE

SWITCHING

6ns

7 ns

0.45A

20 Weeks

LOGIC LEVEL COMPATIBLE

DRAIN

60V

-

-

-

2N7002K-T1-E3 vs 2N7002BKM,315
2N7002E-7-F

Diodes Incorporated

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

7.994566mg

-55°C~150°C TJ

Tape & Reel (TR)

-

2013

Active

1 (Unlimited)

4Ohm

-

-

MOSFET (Metal Oxide)

1

1

370mW Ta

Single

540mW

7 ns

N-Channel

3 Ω @ 250mA, 10V

2.5V @ 250μA

50pF @ 25V

250mA Ta

0.22nC @ 4.5V

-

4.5V 10V

±20V

11 ns

250mA

-

20V

60V

-

-

-

-

-

1mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

SILICON

e3

yes

3

EAR99

FET General Purpose Powers

DUAL

GULL WING

260

40

3

-

ENHANCEMENT MODE

SWITCHING

-

-

0.24A

19 Weeks

LOW THRESHOLD

-

-

2N7002E-7-F

Matte Tin (Sn)

5 pF

2N7002K-T1-E3 vs 2N7002E-7-F