Nexperia USA Inc. 2N7002BK,215
- Part Number:
- 2N7002BK,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2477937-2N7002BK,215
- Description:
- MOSFET N-CH 60V 350MA SOT23
- Datasheet:
- 2N7002BK,215
Nexperia USA Inc. 2N7002BK,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. 2N7002BK,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- HTS Code8541.21.00.75
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max370mW Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.6 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
- Current - Continuous Drain (Id) @ 25°C350mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.6nC @ 4.5V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- DS Breakdown Voltage-Min60V
- RoHS StatusROHS3 Compliant
2N7002BK,215 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 50pF @ 10V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
2N7002BK,215 Features
a 60V drain to source voltage (Vdss)
2N7002BK,215 Applications
There are a lot of Nexperia USA Inc.
2N7002BK,215 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 50pF @ 10V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
2N7002BK,215 Features
a 60V drain to source voltage (Vdss)
2N7002BK,215 Applications
There are a lot of Nexperia USA Inc.
2N7002BK,215 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
2N7002BK,215 More Descriptions
MOSFET, N CH, 60V, 1OHM, 350mA, TO-263AB-3; Transistor Polarity:N Channel; Conti
2N7002BK,215 Nexperia MOSFET Single N-Channel 60V350mA SOT23 RoHS
60V 350mA 1.6¦¸@10V,500mA 370mW 2.1V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
2N7002BK Series N-Channel 60 V 1.6 Ohm 370 mW 0.6 nC SMT TrenchMOS FET - SOT-23
MOSFET,N CH,60V,0.35A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Source Voltage Vds:60V; On Resistance
Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET,N CH,60V,0.35A,SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 350mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 440mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 350mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 350 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 1.6 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 6 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.2
2N7002BK,215 Nexperia MOSFET Single N-Channel 60V350mA SOT23 RoHS
60V 350mA 1.6¦¸@10V,500mA 370mW 2.1V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
2N7002BK Series N-Channel 60 V 1.6 Ohm 370 mW 0.6 nC SMT TrenchMOS FET - SOT-23
MOSFET,N CH,60V,0.35A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Source Voltage Vds:60V; On Resistance
Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET,N CH,60V,0.35A,SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 350mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 440mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 350mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 350 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 1.6 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 6 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.2
The three parts on the right have similar specifications to 2N7002BK,215.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)DS Breakdown Voltage-MinRoHS StatusMountWeightTerminationResistanceSubcategoryNumber of ChannelsVoltageElement ConfigurationCurrentPower DissipationTurn On Delay TimeTurn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningLead FreeContact PlatingCase ConnectionRise TimeFall Time (Typ)Max Dual Supply VoltageDrain Current-Max (Abs) (ID)Manufacturer Package IdentifierPbfree CodeView Compare
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2N7002BK,2154 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchMOS™2010e3Active1 (Unlimited)3EAR99Tin (Sn)LOGIC LEVEL COMPATIBLE8541.21.00.75MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED31SINGLE WITH BUILT-IN DIODE370mW TaENHANCEMENT MODEN-ChannelSWITCHING1.6 Ω @ 500mA, 10V2.1V @ 250μA50pF @ 10V350mA Ta0.6nC @ 4.5V60V10V±20V60VROHS3 Compliant----------------------------------
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-Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)--e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)DUALGULL WING--31-200mW TaENHANCEMENT MODEN-Channel-7.5 Ω @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta--5V 10V±20V-ROHS3 CompliantSurface Mount1.437803gSMD/SMT7.5OhmFET General Purpose Power160VSingle3A200mW7 ns11 ns115mA2.1V20V60V60V2 V5 pF1.02mm3.04mm1.4mmNo SVHCNoLead Free--------
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20 WeeksSurface MountSC-101, SOT-883YES3SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchMOS™2010e3Last Time Buy1 (Unlimited)3--LOGIC LEVEL COMPATIBLE-MOSFET (Metal Oxide)BOTTOM---31-360mW TaENHANCEMENT MODEN-ChannelSWITCHING1.6 Ω @ 500mA, 10V2.1V @ 250μA50pF @ 10V450mA Ta0.6nC @ 4.5V-10V±20V-ROHS3 Compliant-------Single-715mW5 ns12 ns450mA-20V60V-------NoLead FreeTinDRAIN6ns7 ns60V0.45A--
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19 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)-2013e3Active1 (Unlimited)3EAR99Matte Tin (Sn)LOW THRESHOLD-MOSFET (Metal Oxide)DUALGULL WING2604031-370mW TaENHANCEMENT MODEN-ChannelSWITCHING3 Ω @ 250mA, 10V2.5V @ 250μA50pF @ 25V250mA Ta0.22nC @ 4.5V-4.5V 10V±20V-ROHS3 CompliantSurface Mount7.994566mg-4OhmFET General Purpose Powers1-Single-540mW7 ns11 ns250mA-20V60V--5 pF1mm2.9mm1.3mmNo SVHCNoLead Free-----0.24A2N7002E-7-Fyes
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