Fairchild/ON Semiconductor 2N7000TA

Name: 2N7000TA
Brand: Fairchild/ON Semiconductor
SKU: 2477942-2N7000TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7000TA

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2477942-2N7000TA

Description:: MOSFET N-CH 60V 0.2A TO-92

ECAD Model:

Datasheet:: 2N7000TA

Specifications

Fairchild/ON Semiconductor 2N7000TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N7000TA.

Factory Lead Time
9 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Manufacturer Package Identifier
TO-92 3L
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Resistance
5Ohm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
200mA
Base Part Number
2N7000
Number of Elements
1
Power Dissipation-Max
400mW Ta
Element Configuration
Single
Power Dissipation
400mW
Turn On Delay Time
10 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
200mA Tc
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
200mA
Threshold Voltage
3.9V
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
0.2A
Drain to Source Breakdown Voltage
60V
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N7000TA Description
These high cell density, DMOS N-channel enhancement mode field effect transistors are made only by ON Semiconductor. These devices' on-state resistance has been minimized while still offering robust, dependable, and quick switching performance. They can deliver pulsed currents up to 2 A and can be employed in the majority of applications requiring up to 400 mA DC. These components are best suited for low-voltage, low-current uses including power MOSFET gate drivers, small servo motor control, and other switching applications.

2N7000TA Features
? Low RDS High Density Cell Design (ON)
? Switches with voltage control for small signals
? Tough and Dependable
? High Current Saturation Capability

2N7000TA Applications
Switching applications

2N7000TA More Descriptions

Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo - Ammo Pack
2N7000BU Series 60 V 5 Ohm N-Channel Advanced Small Signal MOSFET - TO-92
MOSFET, N-CH, 60V, 0.2A, TO-226AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Source Voltage Vds:60V; On Resistance
MOSFET, N-CH, 60V, 0.2A, TO-226AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.9V; Power Dissipation Pd: 400mW; Transistor Case Style: TO-226AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Product Comparison

The three parts on the right have similar specifications to 2N7000TA.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Manufacturer Package Identifier

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Number of Elements

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

Supplier Device Package

Weight

Transistor Element Material

Pbfree Code

Number of Terminations

Additional Feature

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Channels

Operating Mode

Transistor Application

Gate Charge (Qg) (Max) @ Vgs

Feedback Cap-Max (Crss)

View Compare
2N7000TA

Fairchild/ON Semiconductor

9 Weeks

Copper, Silver, Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

TO-92 3L

-55°C~150°C TJ

Tape & Box (TB)

2013

e3

Active

1 (Unlimited)

EAR99

5Ohm

Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

200mA

2N7000

1

400mW Ta

Single

400mW

10 ns

N-Channel

5 Ω @ 500mA, 10V

3V @ 1mA

50pF @ 25V

200mA Tc

10ns

4.5V 10V

±20V

10 ns

10 ns

200mA

3.9V

30V

0.2A

60V

5.33mm

5.2mm

4.19mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7002W

Fairchild/ON Semiconductor

-

-

-

-

SOT-323(SC-70)

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

5Ω @ 500mA,10V

2.5V @ 250uA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

60V

115mA

200mW

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N7000TA vs 2N7002W
2N7002_NB9G002

Fairchild/ON Semiconductor

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

2N7002

-

200mW Ta

-

-

-

N-Channel

7.5Ohm @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

115mA Ta

-

5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

60V

-

-

SOT-23 (TO-236AB)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N7000TA vs 2N7002_NB9G002
2N7002E-7-F

Diodes Incorporated

19 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

2N7002E-7-F

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

Active

1 (Unlimited)

EAR99

4Ohm

Matte Tin (Sn)

FET General Purpose Powers

-

MOSFET (Metal Oxide)

-

-

1

370mW Ta

Single

540mW

7 ns

N-Channel

3 Ω @ 250mA, 10V

2.5V @ 250μA

50pF @ 25V

250mA Ta

-

4.5V 10V

±20V

-

11 ns

250mA

-

20V

0.24A

60V

1mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

7.994566mg

SILICON

yes

3

LOW THRESHOLD

DUAL

GULL WING

260

40

3

1

ENHANCEMENT MODE

SWITCHING

0.22nC @ 4.5V

5 pF

2N7000TA vs 2N7002E-7-F