STMicroelectronics 2N7000

Name: 2N7000
Brand: STMicroelectronics
SKU: 2488472-2N7000
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7000

Manufacturer:: STMicroelectronics

Ventron No:: 2488472-2N7000

Description:: MOSFET N-CH 60V 350MA TO-92

ECAD Model:

Datasheet:: 2N700(0,2) Datasheet

Part Pictures

Specifications

STMicroelectronics 2N7000 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N7000.

Vgs(th) (Max) @ Id:
3V @ 250µA
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
TO-92-3
Series:
STripFET™
Rds On (Max) @ Id, Vgs:
5 Ohm @ 500mA, 10V
Power Dissipation (Max):
1W (Tc)
Packaging:
Bulk
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
43pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 5V
FET Type:
N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
350mA (Tc)

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy 2N7000.

2N7000 More Descriptions

Transistor MOSFET N Channel 60 Volt 0.2 Amp 3 Pin TO-92 Bulk
ON SEMICONDUCTOR - 2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
ON Semi THT MOSFET NFET 60V 200mA 5Ω 150°C TO-92 2N7000
N-Channel MOSFET, Enhancement Mode, 60V, 200mA, 5 Ω
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Mosfet, N-Ch, 60V, 0.2A, To-226Aa; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:200Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Onsemi 2N7000.
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Product Comparison

The three parts on the right have similar specifications to 2N7000.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Surface Mount

Qualification Status

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Drain Current-Max (Abs) (ID)

Terminal Finish

Voltage

Current

View Compare
2N7000

STMicroelectronics

3V @ 250µA

MOSFET (Metal Oxide)

TO-92-3

STripFET™

5 Ohm @ 500mA, 10V

1W (Tc)

Bulk

TO-226-3, TO-92-3 (TO-226AA)

-55°C ~ 150°C (TJ)

Through Hole

43pF @ 25V

2nC @ 5V

N-Channel

-

60V

350mA (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7002W-7-F

Diodes Incorporated

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

20 Weeks

Tin

Surface Mount

Surface Mount

SC-70, SOT-323

3

6.010099mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

7.5Ohm

FET General Purpose Powers

60V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

115mA

40

3

1

1

200mW Ta

Single

ENHANCEMENT MODE

200mW

7 ns

N-Channel

SWITCHING

7.5 Ω @ 50mA, 5V

2V @ 250μA

50pF @ 25V

115mA Ta

5V 10V

±20V

11 ns

115mA

2V

20V

70V

60V

2 V

5 pF

1mm

2.2mm

1.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

2N7000 vs 2N7002W-7-F
2N7002ET3G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Tin

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Obsolete

1 (Unlimited)

3

-

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

40

3

1

-

300mW Tj

Single

ENHANCEMENT MODE

300mW

1.7 ns

N-Channel

SWITCHING

2.5 Ω @ 240mA, 10V

2.5V @ 250μA

26.7pF @ 25V

260mA Ta

4.5V 10V

±20V

4.8 ns

310mA

-

20V

60V

-

-

-

-

-

-

-

-

RoHS Compliant

Lead Free

LAST SHIPMENTS (Last Updated: 1 week ago)

YES

Not Qualified

0.81nC @ 5V

1.2ns

1.2 ns

0.26A

-

-

-

2N7000 vs 2N7002ET3G
2N7002-E3

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

-

Obsolete

1 (Unlimited)

3

SMD/SMT

EAR99

7.5Ohm

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

3

1

1

200mW Ta

Single

ENHANCEMENT MODE

200mW

7 ns

N-Channel

-

7.5 Ω @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

115mA Ta

5V 10V

±20V

11 ns

115mA

2.1V

20V

60V

60V

2 V

5 pF

1.02mm

3.04mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

Matte Tin (Sn)

60V

3A

2N7000 vs 2N7002-E3