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PMBFJ113,215

NXP USA Inc. PMBFJ113,215

Part Number:
PMBFJ113,215
Manufacturer:
NXP USA Inc.
Ventron No:
8752596-PMBFJ113,215
Description:
PMBFJ113,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Ventron
ECAD Model:
Datasheet:
PMBFJ113,215

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Specifications
NXP USA Inc. PMBFJ113,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ113,215.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MBFJ113
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    300mW
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Input Capacitance (Ciss) (Max) @ Vds
    6pF @ 10V VGS
  • JEDEC-95 Code
    TO-236AB
  • Drain-source On Resistance-Max
    100Ohm
  • DS Breakdown Voltage-Min
    40V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.3W
  • Current - Drain (Idss) @ Vds (Vgs=0)
    2mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    3V @ 1μA
  • Voltage - Breakdown (V(BR)GSS)
    40V
  • Resistance - RDS(On)
    100Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBFJ113,215              Description   N – Channel JFET ?It consists of an n – type silicon bar forming the conduction channel for the charge carriers. The pn – junction forming diodes are connected internally and a common terminal called GATE is taken out from the p - Region. The other two terminals viz. Source and Drain are taken out from the bar.

PMBFJ113,215                Applications
 Analog switches  Choppers  Commutators  Multiplexers Thin and thick film hybrids.   PMBFJ113,215                    Features
 High-speed switching  Interchangeability of drain and source connections  Low RDSon at zero gate voltage (< 30 W for PMBFJ111).    
PMBFJ113,215 More Descriptions
RF JFET, N CHANNEL, 40V, 2MA, 3-SOT-23
JFET, RF, N CH, 300MW, SOT-23-3; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 2mA; Power Dissipation Pd: 300mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-23; No. of Pins: 3Pi
Transistor; Transistor Type:JFET; Breakdown Voltage, Vbr:-40V; Idss, Zero Gate Voltage Drain Current:2mA; Gate-Source Cutoff Voltage Max, Vgs(off):-500mV; Power Dissipation, Pd:300mW; No. of Pins:3 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PMBFJ113,215.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    JEDEC-95 Code
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    Factory Lead Time
    Additional Feature
    Feedback Cap-Max (Crss)
    Highest Frequency Band
    View Compare
  • PMBFJ113,215
    PMBFJ113,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ113
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    100Ohm
    40V
    JUNCTION
    0.3W
    2mA @ 15V
    3V @ 1μA
    40V
    100Ohm
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • PMBFJ308,215
    PMBFJ308,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Not For New Designs
    1 (Unlimited)
    3
    -
    Tin (Sn)
    8541.21.00.75
    Other Transistors
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    -
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    AMPLIFIER
    5pF @ 10V
    TO-236AB
    -
    25V
    JUNCTION
    0.25W
    12mA @ 10V
    1V @ 1μA
    25V
    50Ohm
    ROHS3 Compliant
    8 Weeks
    LOW NOISE
    2.5 pF
    VERY HIGH FREQUENCY B
    PMBFJ113,215 vs PMBFJ308,215
  • PMBFJ112,215
    PMBFJ112,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ112
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    50Ohm
    40V
    JUNCTION
    0.3W
    5mA @ 15V
    5V @ 1μA
    40V
    50Ohm
    ROHS3 Compliant
    -
    -
    -
    -
    PMBFJ113,215 vs PMBFJ112,215
  • PMBFJ310,215
    PMBFJ310,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    Tin (Sn)
    8541.21.00.75
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ310
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    AMPLIFIER
    5pF @ 10V
    TO-236AB
    -
    25V
    JUNCTION
    0.25W
    24mA @ 10V
    2V @ 1μA
    25V
    50Ohm
    ROHS3 Compliant
    -
    LOW NOISE
    2.5 pF
    VERY HIGH FREQUENCY B
    PMBFJ113,215 vs PMBFJ310,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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