NXP USA Inc. PMBFJ174,215
- Part Number:
- PMBFJ174,215
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3072193-PMBFJ174,215
- Description:
- JFET P-CH 30V 0.3W SOT23
- ECAD Model:
-
- Datasheet:
- PMBFJ174,215
NXP USA Inc. PMBFJ174,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ174,215.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- SubcategoryFET General Purpose Small Signal
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMBFJ174
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeDEPLETION MODE
- Power - Max300mW
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Input Capacitance (Ciss) (Max) @ Vds8pF @ 10V VGS
- Drain-source On Resistance-Max85Ohm
- DS Breakdown Voltage-Min30V
- FET TechnologyJUNCTION
- Power Dissipation-Max (Abs)0.3W
- Current - Drain (Idss) @ Vds (Vgs=0)20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id5V @ 10nA
- Voltage - Breakdown (V(BR)GSS)30V
- Resistance - RDS(On)85Ohm
- RoHS StatusROHS3 Compliant
PMBFJ174,215 Description
Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.
PMBFJ174,215 Features
? Extremely Efficient Trench with Field Stop Technology ? Low VCE(sat) Loss Reduces System Power Dissipation PMBFJ174,215 Applications
? Industrial Motor Drives ? Solar Inverters ? UPS Systems
? Extremely Efficient Trench with Field Stop Technology ? Low VCE(sat) Loss Reduces System Power Dissipation PMBFJ174,215 Applications
? Industrial Motor Drives ? Solar Inverters ? UPS Systems
PMBFJ174,215 More Descriptions
NXP PMBFJ174, 215 P-channel JFET Transistor, 30 V, Idss 20135mA, 3-Pin SOT-23
PMBFJ174 Series 30 V 20 mA P-Channel Silicon Field-Effect Transistor - SOT-23-3
RF JFET, N CH, 30V, 135MA, 3-SOT-23; TRA; Transistor Type:RF JFET; Breakdown Voltage Vbr:30V; Zero Gate
RF JFET, N CHANNEL, 30V, 135MA, 3-SOT-23
Trans JFET P-CH 30V 135mA Si 3-Pin TO-236AB T/R
PMBFJ174,215,TAPE7 J-FET, SOT 23, R77STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
RF SMALL SIGNAL TRANSISTOR MOSFET
PMBFJ174 Series 30 V 20 mA P-Channel Silicon Field-Effect Transistor - SOT-23-3
RF JFET, N CH, 30V, 135MA, 3-SOT-23; TRA; Transistor Type:RF JFET; Breakdown Voltage Vbr:30V; Zero Gate
RF JFET, N CHANNEL, 30V, 135MA, 3-SOT-23
Trans JFET P-CH 30V 135mA Si 3-Pin TO-236AB T/R
PMBFJ174,215,TAPE7 J-FET, SOT 23, R77
RF SMALL SIGNAL TRANSISTOR MOSFET
The three parts on the right have similar specifications to PMBFJ174,215.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModePower - MaxFET TypeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsDrain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)Current - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdVoltage - Breakdown (V(BR)GSS)Resistance - RDS(On)RoHS StatusFactory Lead TimeAdditional FeatureJEDEC-95 CodeFeedback Cap-Max (Crss)Highest Frequency BandView Compare
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PMBFJ174,215Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)1997e3Obsolete1 (Unlimited)3EAR99Tin (Sn)8541.21.00.95FET General Purpose Small SignalDUALGULL WING26040MBFJ1743R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE300mWP-ChannelSWITCHING8pF @ 10V VGS85Ohm30VJUNCTION0.3W20mA @ 15V5V @ 10nA30V85OhmROHS3 Compliant------ -
Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Not For New Designs1 (Unlimited)3-Tin (Sn)8541.21.00.75Other TransistorsDUALGULL WING260NOT SPECIFIED-3R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE250mWN-ChannelAMPLIFIER5pF @ 10V-25VJUNCTION0.25W12mA @ 10V1V @ 1μA25V50OhmROHS3 Compliant8 WeeksLOW NOISETO-236AB2.5 pFVERY HIGH FREQUENCY B
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)3EAR99Tin (Sn)8541.21.00.95Other TransistorsDUALGULL WING26040MBFJ1123R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE300mWN-ChannelSWITCHING6pF @ 10V VGS50Ohm40VJUNCTION0.3W5mA @ 15V5V @ 1μA40V50OhmROHS3 Compliant--TO-236AB--
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)3-Tin (Sn)8541.21.00.75Other TransistorsDUALGULL WING26040MBFJ3103R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE250mWN-ChannelAMPLIFIER5pF @ 10V-25VJUNCTION0.25W24mA @ 10V2V @ 1μA25V50OhmROHS3 Compliant-LOW NOISETO-236AB2.5 pFVERY HIGH FREQUENCY B
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