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PMBFJ308,215

NXP USA Inc. PMBFJ308,215

Part Number:
PMBFJ308,215
Manufacturer:
NXP USA Inc.
Ventron No:
8752901-PMBFJ308,215
Description:
PMBFJ308,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Ventron
ECAD Model:
Datasheet:
PMBFJ308,215

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Specifications
NXP USA Inc. PMBFJ308,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ308,215.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOW NOISE
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    250mW
  • FET Type
    N-Channel
  • Transistor Application
    AMPLIFIER
  • Input Capacitance (Ciss) (Max) @ Vds
    5pF @ 10V
  • JEDEC-95 Code
    TO-236AB
  • DS Breakdown Voltage-Min
    25V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.25W
  • Feedback Cap-Max (Crss)
    2.5 pF
  • Highest Frequency Band
    VERY HIGH FREQUENCY B
  • Current - Drain (Idss) @ Vds (Vgs=0)
    12mA @ 10V
  • Voltage - Cutoff (VGS off) @ Id
    1V @ 1μA
  • Voltage - Breakdown (V(BR)GSS)
    25V
  • Resistance - RDS(On)
    50Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBFJ308,215 Description
The PMBFJ308,215 is a 25V Symmetrical N-channel silicon junction field-effect transistor in a SOT23 package. The PMBFJ308,215 can be applied in AM input stage in car radios, VHF amplifiers, and Oscillators and mixers. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor PMBFJ308,215 is in the SOT23 package with 250mW power dissipation.

PMBFJ308,215 Features
Low noise Interchangeability of drain and source connections High gain. VGSO gate-source voltage open drain - 25 V VGDO gate-drain voltage open source - 25 V

PMBFJ308,215 Applications
AM input stage in car radios VHF amplifiers Oscillators and mixers.
PMBFJ308,215 More Descriptions
N-channel Silicon Fet, Reel 7" Q3 Ndp Low Profile, Tape Reel Rohs Compliant: Yes
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
TRANSISTOR, JFET, N-CH, -6.5V, TO-236AB; Breakdown Voltage Vbr: 25V; Zero Gate Voltage Drain Current Idss Min: 12mA; Zero Gate Voltage Drain Current Idss Max: 60mA; Gate-Source Cutoff Voltage Vgs(off) Max: -6.5V; Transistor Case Style: TO-236AB; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: PMBFJ Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to PMBFJ308,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    JEDEC-95 Code
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Feedback Cap-Max (Crss)
    Highest Frequency Band
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    ECCN Code
    Base Part Number
    Drain-source On Resistance-Max
    Drain Current-Max (Abs) (ID)
    View Compare
  • PMBFJ308,215
    PMBFJ308,215
    NXP USA Inc.
    8 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Not For New Designs
    1 (Unlimited)
    3
    Tin (Sn)
    LOW NOISE
    8541.21.00.75
    Other Transistors
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    AMPLIFIER
    5pF @ 10V
    TO-236AB
    25V
    JUNCTION
    0.25W
    2.5 pF
    VERY HIGH FREQUENCY B
    12mA @ 10V
    1V @ 1μA
    25V
    50Ohm
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • PMBFJ176,215
    PMBFJ176,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    -
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    -
    30V
    JUNCTION
    0.3W
    -
    -
    2mA @ 15V
    1V @ 10nA
    30V
    250Ohm
    ROHS3 Compliant
    EAR99
    MBFJ176
    250Ohm
    -
    PMBFJ308,215 vs PMBFJ176,215
  • PMBF4392,215
    PMBF4392,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    -
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    SWITCHING
    14pF @ 20V
    -
    40V
    JUNCTION
    0.25W
    3.5 pF
    -
    25mA @ 20V
    2V @ 1nA
    40V
    -
    ROHS3 Compliant
    EAR99
    MBF4392
    60Ohm
    0.006A
    PMBFJ308,215 vs PMBF4392,215
  • PMBFJ174,215
    PMBFJ174,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    -
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    -
    30V
    JUNCTION
    0.3W
    -
    -
    20mA @ 15V
    5V @ 10nA
    30V
    85Ohm
    ROHS3 Compliant
    EAR99
    MBFJ174
    85Ohm
    -
    PMBFJ308,215 vs PMBFJ174,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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