Home > Products > Discrete Semiconductor Products > Transistors - JFETs > PMBFJ112,215
PMBFJ112,215

NXP USA Inc. PMBFJ112,215

Part Number:
PMBFJ112,215
Manufacturer:
NXP USA Inc.
Ventron No:
2496473-PMBFJ112,215
Description:
JFET N-CH 40V 0.3W SOT23
ECAD Model:
Datasheet:
PMBFJ112,215

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
NXP USA Inc. PMBFJ112,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ112,215.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MBFJ112
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    300mW
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Input Capacitance (Ciss) (Max) @ Vds
    6pF @ 10V VGS
  • JEDEC-95 Code
    TO-236AB
  • Drain-source On Resistance-Max
    50Ohm
  • DS Breakdown Voltage-Min
    40V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.3W
  • Current - Drain (Idss) @ Vds (Vgs=0)
    5mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    5V @ 1μA
  • Voltage - Breakdown (V(BR)GSS)
    40V
  • Resistance - RDS(On)
    50Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBFJ112,215                  Description   N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).

PMBFJ112,215                  Features
High-speed switching Interchangeability of drain and source connections  Low RDSon at zero gate voltage (< 30 W for PMBFJ111).    PMBFJ112,215                    Applications  Analog switches Choppers Commutators  Multiplexers  Thin and thick film hybrids.  
PMBFJ112,215 More Descriptions
Jfet Transistor, Junction Field Effect, Jfet, 40 V, 5 Ma, 3 V, Sot-23 Rohs Compliant: Yes
Transistor, JFET, N, RF, SOT-23; Breakdown Voltage Vbr:40V; Zero Gate Drain Current Idss Min:5mA; Max:-;
PMBFJ112 Series 5 Vgs 50 mA SMT N-Channel junction FETs - SOT-23-3
Transistor JFET N-CH 40V 3-Pin TO-236AB T/R
Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB
PMBFJ112,215,TAPE7 FET-RFSS, SOT23, R77 STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
TRANSISTOR, JFET, N, RF, SOT-23; Breakdown Voltage Vbr: 40V; Zero Gate Voltage Drain Current Idss Min: 5mA; Zero Gate Voltage Drain Current Idss Max: -; Gate-Source Cutoff Voltage Vgs(off) Max: -3V; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Idss Min: 5mA; Current Ig: 50mA; Drain Source Voltage Vds: 40V; Junction Temperature Tj Max: 150°C; No. of Pins: 3Pins; On State Resistance Max: 50ohm; Pin Configuration: D(1),S(2),G(3); Power Dissipation Pd: 300mW; Power Dissipation Ptot Max: 300mW; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Voltage Vgs Off Min: -10V
Product Comparison
The three parts on the right have similar specifications to PMBFJ112,215.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    JEDEC-95 Code
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    View Compare
  • PMBFJ112,215
    PMBFJ112,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ112
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    50Ohm
    40V
    JUNCTION
    0.3W
    5mA @ 15V
    5V @ 1μA
    40V
    50Ohm
    ROHS3 Compliant
    -
  • PMBFJ176,215
    PMBFJ176,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    MBFJ176
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    -
    250Ohm
    30V
    JUNCTION
    0.3W
    2mA @ 15V
    1V @ 10nA
    30V
    250Ohm
    ROHS3 Compliant
    PMBFJ112,215 vs PMBFJ176,215
  • PMBFJ174,215
    PMBFJ174,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    MBFJ174
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    -
    85Ohm
    30V
    JUNCTION
    0.3W
    20mA @ 15V
    5V @ 10nA
    30V
    85Ohm
    ROHS3 Compliant
    PMBFJ112,215 vs PMBFJ174,215
  • PMBFJ111,215
    PMBFJ111,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ111
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    30Ohm
    40V
    JUNCTION
    0.3W
    20mA @ 15V
    10V @ 1μA
    40V
    30Ohm
    ROHS3 Compliant
    PMBFJ112,215 vs PMBFJ111,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for PMBFJ112,215
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.