NXP USA Inc. BFT46,215

Name: BFT46,215
Brand: NXP USA Inc.
SKU: 8752926-BFT46,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFT46,215

Manufacturer:: NXP USA Inc.

Ventron No:: 8752926-BFT46,215

Description:: BFT46,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Ventron

ECAD Model:

Datasheet:: BFT46

Specifications

NXP USA Inc. BFT46,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFT46,215.

Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BFT46
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Operating Mode
DEPLETION MODE
Power - Max
250mW
FET Type
N-Channel
Transistor Application
AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds
5pF @ 10V
Drain to Source Voltage (Vdss)
25V
DS Breakdown Voltage-Min
25V
FET Technology
JUNCTION
Power Dissipation-Max (Abs)
0.25W
Feedback Cap-Max (Crss)
1.5 pF
Current - Drain (Idss) @ Vds (Vgs=0)
200μA @ 10V
Voltage - Cutoff (VGS off) @ Id
1.2V @ 0.5nA
Current Drain (Id) - Max
10mA
RoHS Status
ROHS3 Compliant

Description

BFT46,215 Description
BFT46,215 is a type of symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low-level general-purpose amplifiers in thick and thin-film circuits due to its specific characteristics. It is available in the SOT23 package for the purpose of saving board space.

BFT46,215 Features
Available in the SOT23 package Drain-source voltage： 25 V Total power dissipation up to Tamb = 40 ℃ Junction temperature: 150 ℃

BFT46,215 Applications
Low-level general purpose amplifiers

BFT46,215 More Descriptions

Transistor, JFET, N, SOT-23; Breakdown Voltage Vbr:-; Zero Gate Drain Current Idss Min:200µA;
Jfet Transistor, Junction Field Effect, Jfet, 200 A, 1.5 Ma, 2 V, Sot-23 Rohs Compliant: Yes
BFT46 Series 25 V 10 mA Surface Mount N-Channel Silicon FET - SOT-23-3
TRANSISTOR, JFET, N, SOT-23; Breakdown Voltage Vbr: -; Zero Gate Voltage Drain Current Idss Min: 200µA; Zero Gate Voltage Drain Current Idss Max: 1.5mA; Gate-Source Cutoff Voltage Vgs(off) Max: -2V; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Application Code: GPA; Current Idss Max: 60mA; Current Idss Min: 1mA; Current Ig: 5mA; Drain Source Voltage Vds: 25V; Full Power Rating Temperature: 40°C; No. of Pins: 3Pins; No. of Transistors: 1; Power Dissipation Pd: 250mW; Power Dissipation Ptot Max: 250W; SMD Marking: M3p; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Zero Gate Voltage Drain Current Idss: 200µA to 1.5mA

Certification