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PMBFJ109,215

NXP USA Inc. PMBFJ109,215

Part Number:
PMBFJ109,215
Manufacturer:
NXP USA Inc.
Ventron No:
8752931-PMBFJ109,215
Description:
PMBFJ109,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Ventron
ECAD Model:
Datasheet:
PMBFJ108.109,110

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Specifications
NXP USA Inc. PMBFJ109,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ109,215.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    MBFJ109
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    250mW
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Input Capacitance (Ciss) (Max) @ Vds
    30pF @ 10V VGS
  • JEDEC-95 Code
    TO-236AB
  • Drain-source On Resistance-Max
    12Ohm
  • DS Breakdown Voltage-Min
    25V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.25W
  • Feedback Cap-Max (Crss)
    15 pF
  • Current - Drain (Idss) @ Vds (Vgs=0)
    40mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    6V @ 1μA
  • Voltage - Breakdown (V(BR)GSS)
    25V
  • Resistance - RDS(On)
    12Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBFJ109,215 Description
The PMBFJ109,215 is an N-channel junction FET and Symmetrical N-channel junction FETs in a SOT23 package. For use in thick and thin-film circuits, symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) are packaged in a plastic microminiature envelope. The transistors are designed for low-power, switching, or chopping industrial applications.

PMBFJ109,215 Features
High-speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (＜8Ω for PMBFJ108)
Small package

PMBFJ109,215 Applications
Analog switches
Choppers and commutators
Audio amplifiers
Low-power chopper
Switching
Thick and thin-film circuits
PMBFJ109,215 More Descriptions
PMBFJ108 Series Single N Channel 25 V 12 Ohm Surface Mount JFET - SOT-23
RF JFET, N CHANNEL, 25V, 40MA, 3-SOT-23
Trans JFET N-CH 25V 3-Pin TO-236AB T/R
NPN 25V 250mW Transistors (NPN/PNP)
RF SMALL SIGNAL TRANSISTOR MOSFET
Rf Jfet, N Channel, 25V, 40Ma, 3-Sot-23; Breakdown Voltage Vbr:-25V; Zero Gate Voltage Drain Current Idss Min:-; Zero Gate Voltage Drain Current Idss Max:40Ma; Gate-Source Cutoff Voltage Vgs(Off) Max:-2V; Transistor Type:-; Msl:- Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PMBFJ109,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    JEDEC-95 Code
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Feedback Cap-Max (Crss)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    Additional Feature
    Highest Frequency Band
    View Compare
  • PMBFJ109,215
    PMBFJ109,215
    NXP USA Inc.
    8 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    MBFJ109
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    SWITCHING
    30pF @ 10V VGS
    TO-236AB
    12Ohm
    25V
    JUNCTION
    0.25W
    15 pF
    40mA @ 15V
    6V @ 1μA
    25V
    12Ohm
    ROHS3 Compliant
    -
    -
    -
  • PMBFJ176,215
    PMBFJ176,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    MBFJ176
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    -
    250Ohm
    30V
    JUNCTION
    0.3W
    -
    2mA @ 15V
    1V @ 10nA
    30V
    250Ohm
    ROHS3 Compliant
    -
    -
    PMBFJ109,215 vs PMBFJ176,215
  • PMBFJ112,215
    PMBFJ112,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ112
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    50Ohm
    40V
    JUNCTION
    0.3W
    -
    5mA @ 15V
    5V @ 1μA
    40V
    50Ohm
    ROHS3 Compliant
    -
    -
    PMBFJ109,215 vs PMBFJ112,215
  • PMBFJ310,215
    PMBFJ310,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    Tin (Sn)
    8541.21.00.75
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ310
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    AMPLIFIER
    5pF @ 10V
    TO-236AB
    -
    25V
    JUNCTION
    0.25W
    2.5 pF
    24mA @ 10V
    2V @ 1μA
    25V
    50Ohm
    ROHS3 Compliant
    LOW NOISE
    VERY HIGH FREQUENCY B
    PMBFJ109,215 vs PMBFJ310,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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