NXP USA Inc. PMBFJ111,215
- Part Number:
- PMBFJ111,215
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3072174-PMBFJ111,215
- Description:
- JFET N-CH 40V 0.3W SOT23
- Datasheet:
- PMBFJ111,215
NXP USA Inc. PMBFJ111,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ111,215.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMBFJ111
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeDEPLETION MODE
- Power - Max300mW
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Input Capacitance (Ciss) (Max) @ Vds6pF @ 10V VGS
- JEDEC-95 CodeTO-236AB
- Drain-source On Resistance-Max30Ohm
- DS Breakdown Voltage-Min40V
- FET TechnologyJUNCTION
- Power Dissipation-Max (Abs)0.3W
- Current - Drain (Idss) @ Vds (Vgs=0)20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id10V @ 1μA
- Voltage - Breakdown (V(BR)GSS)40V
- Resistance - RDS(On)30Ohm
- RoHS StatusROHS3 Compliant
PMBFJ111,215 Description
The PMBFJ111,215 is a Symmetrical N-channel junction FET in a SOT23 package. The field-effect transistor (FET) is a type of transistor that regulates the flow of current in a semiconductor by using an electric field. Devices containing FETs (JFETs or MOSFETs) have three terminals: the source, gate, and drain. By applying a voltage to the gate, which changes the conductivity between the drain and source, FETs may regulate the current flow.
PMBFJ111,215 Features
High-speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (< 30 Ω for PMBFJ111)
It has better thermal stability
Have high gate-to-drain current resistance
PMBFJ111,215 Applications
Commutators
Multiplexers
Thin and thick film hybrids
Analog switches
Choppers
The PMBFJ111,215 is a Symmetrical N-channel junction FET in a SOT23 package. The field-effect transistor (FET) is a type of transistor that regulates the flow of current in a semiconductor by using an electric field. Devices containing FETs (JFETs or MOSFETs) have three terminals: the source, gate, and drain. By applying a voltage to the gate, which changes the conductivity between the drain and source, FETs may regulate the current flow.
PMBFJ111,215 Features
High-speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (< 30 Ω for PMBFJ111)
It has better thermal stability
Have high gate-to-drain current resistance
PMBFJ111,215 Applications
Commutators
Multiplexers
Thin and thick film hybrids
Analog switches
Choppers
PMBFJ111,215 More Descriptions
RF JFET, N CHANNEL, 40V, 20MA, 3-SOT-23
Transistor; Transistor Type:JFET; Breakdown Voltage, Vbr:-40V; Gate-Source Cutoff Voltage Max, Vgs(off):-3V; Power Dissipation, Pd:300mW; No. of Pins:3 ;RoHS Compliant: Yes
JFET, RF, N CH, 300MW, SOT-23-3; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 20mA; Power Dissipation Pd: 300mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Transistor Type: RF JFET
Transistor; Transistor Type:JFET; Breakdown Voltage, Vbr:-40V; Gate-Source Cutoff Voltage Max, Vgs(off):-3V; Power Dissipation, Pd:300mW; No. of Pins:3 ;RoHS Compliant: Yes
JFET, RF, N CH, 300MW, SOT-23-3; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 20mA; Power Dissipation Pd: 300mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Transistor Type: RF JFET
The three parts on the right have similar specifications to PMBFJ111,215.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModePower - MaxFET TypeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsJEDEC-95 CodeDrain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)Current - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdVoltage - Breakdown (V(BR)GSS)Resistance - RDS(On)RoHS StatusAdditional FeatureFeedback Cap-Max (Crss)Highest Frequency BandView Compare
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PMBFJ111,215Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)3EAR99Tin (Sn)8541.21.00.95Other TransistorsDUALGULL WING26040MBFJ1113R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE300mWN-ChannelSWITCHING6pF @ 10V VGSTO-236AB30Ohm40VJUNCTION0.3W20mA @ 15V10V @ 1μA40V30OhmROHS3 Compliant----
-
Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)1997e3Obsolete1 (Unlimited)3EAR99Tin (Sn)8541.21.00.95FET General Purpose Small SignalDUALGULL WING26040MBFJ1743R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE300mWP-ChannelSWITCHING8pF @ 10V VGS-85Ohm30VJUNCTION0.3W20mA @ 15V5V @ 10nA30V85OhmROHS3 Compliant---
-
Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)3EAR99Tin (Sn)8541.21.00.95Other TransistorsDUALGULL WING26040MBFJ1123R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE300mWN-ChannelSWITCHING6pF @ 10V VGSTO-236AB50Ohm40VJUNCTION0.3W5mA @ 15V5V @ 1μA40V50OhmROHS3 Compliant---
-
Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)3-Tin (Sn)8541.21.00.75Other TransistorsDUALGULL WING26040MBFJ3103R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE250mWN-ChannelAMPLIFIER5pF @ 10VTO-236AB-25VJUNCTION0.25W24mA @ 10V2V @ 1μA25V50OhmROHS3 CompliantLOW NOISE2.5 pFVERY HIGH FREQUENCY B
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