NXP USA Inc. PMBFJ620,115
- Part Number:
- PMBFJ620,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 8752930-PMBFJ620,115
- Description:
- PMBFJ620,115 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Ventron
- ECAD Model:
-
- Datasheet:
- PMBFJ620,115
NXP USA Inc. PMBFJ620,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ620,115.
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOW NOISE
- HTS Code8541.21.00.75
- SubcategoryFET General Purpose Small Signal
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMBFJ620
- Pin Count6
- JESD-30 CodeR-PDSO-G6
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Power - Max190mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationAMPLIFIER
- Input Capacitance (Ciss) (Max) @ Vds5pF @ 10V
- DS Breakdown Voltage-Min25V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)0.19W
- Feedback Cap-Max (Crss)2.5 pF
- Current - Drain (Idss) @ Vds (Vgs=0)24mA @ 10V
- Voltage - Cutoff (VGS off) @ Id2V @ 1μA
- Voltage - Breakdown (V(BR)GSS)25V
- Resistance - RDS(On)50Ohm
- RoHS StatusROHS3 Compliant
PMBFJ620,115 Description
A SOT363 package with two N-channel symmetrical junction field-effect transistors
PMBFJ620,115 Features
In a single package, there are two field effect transistors.
low volume
The ability to switch between drain and source connections
High profit.
PMBFJ620,115 Applications
Car radios' AM input stage
amplified VHF
Mixers and oscillators.
A SOT363 package with two N-channel symmetrical junction field-effect transistors
PMBFJ620,115 Features
In a single package, there are two field effect transistors.
low volume
The ability to switch between drain and source connections
High profit.
PMBFJ620,115 Applications
Car radios' AM input stage
amplified VHF
Mixers and oscillators.
PMBFJ620,115 More Descriptions
NXP PMBFJ620,115 JFET Transistor, -25 V, 24 mA, 60 mA, -6.5 V, SOT-363, JFET
Trans JFET N-CH 25V 6-Pin TSSOP T/R
RF JFET, N CHANNEL, 25V, 60MA, 6-SOT-363
Rf Jfet, N Channel, 25V, 60Ma, 6-Sot-363; Gate Source Breakdown Voltage Max:-25V; Zero Gate Voltage Drain Current Max:60Ma; Gate Source Cutoff Voltage Max:-6.5V; No. Of Pins:6 Pin; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Nxp PMBFJ620,115
Trans JFET N-CH 25V 6-Pin TSSOP T/R
RF JFET, N CHANNEL, 25V, 60MA, 6-SOT-363
Rf Jfet, N Channel, 25V, 60Ma, 6-Sot-363; Gate Source Breakdown Voltage Max:-25V; Zero Gate Voltage Drain Current Max:60Ma; Gate Source Cutoff Voltage Max:-6.5V; No. Of Pins:6 Pin; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Nxp PMBFJ620,115
The three parts on the right have similar specifications to PMBFJ620,115.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModePower - MaxFET TypeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)Feedback Cap-Max (Crss)Current - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdVoltage - Breakdown (V(BR)GSS)Resistance - RDS(On)RoHS StatusTerminal PositionDrain-source On Resistance-MaxJEDEC-95 CodeHighest Frequency BandView Compare
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PMBFJ620,115Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)6EAR99Tin (Sn)LOW NOISE8541.21.00.75FET General Purpose Small SignalGULL WING26040MBFJ6206R-PDSO-G6Not Qualified2SEPARATE, 2 ELEMENTSENHANCEMENT MODE190mW2 N-Channel (Dual)AMPLIFIER5pF @ 10V25VMETAL-OXIDE SEMICONDUCTOR0.19W2.5 pF24mA @ 10V2V @ 1μA25V50OhmROHS3 Compliant----- -
Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)1997e3Obsolete1 (Unlimited)3EAR99Tin (Sn)-8541.21.00.95FET General Purpose Small SignalGULL WING26040MBFJ1743R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE300mWP-ChannelSWITCHING8pF @ 10V VGS30VJUNCTION0.3W-20mA @ 15V5V @ 10nA30V85OhmROHS3 CompliantDUAL85Ohm--
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)3EAR99Tin (Sn)-8541.21.00.95Other TransistorsGULL WING26040MBFJ1123R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE300mWN-ChannelSWITCHING6pF @ 10V VGS40VJUNCTION0.3W-5mA @ 15V5V @ 1μA40V50OhmROHS3 CompliantDUAL50OhmTO-236AB-
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)3-Tin (Sn)LOW NOISE8541.21.00.75Other TransistorsGULL WING26040MBFJ3103R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE250mWN-ChannelAMPLIFIER5pF @ 10V25VJUNCTION0.25W2.5 pF24mA @ 10V2V @ 1μA25V50OhmROHS3 CompliantDUAL-TO-236ABVERY HIGH FREQUENCY B
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