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BSR56,215

NXP USA Inc. BSR56,215

Part Number:
BSR56,215
Manufacturer:
NXP USA Inc.
Ventron No:
8752927-BSR56,215
Description:
BSR56,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Ventron
ECAD Model:
Datasheet:
BSR56(57,58)

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Specifications
NXP USA Inc. BSR56,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BSR56,215.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BSR56
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    250mW
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Drain-source On Resistance-Max
    25Ohm
  • DS Breakdown Voltage-Min
    40V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.3W
  • Feedback Cap-Max (Crss)
    5 pF
  • Current - Drain (Idss) @ Vds (Vgs=0)
    50mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    4V @ 0.5nA
  • Voltage - Breakdown (V(BR)GSS)
    40V
  • Resistance - RDS(On)
    25Ohm
  • Current Drain (Id) - Max
    20mA
  • RoHS Status
    ROHS3 Compliant
Description
BSR56,215 Description
For use in thick and thin-film circuits, symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) are packaged in a plastic microminiature envelope. The transistors are designed for low-power, switching or chopping industrial applications.

BSR56,215 Features
Interchangeable drain and source connections
Small package

BSR56,215 Applications
Low-power, chopper or switching applications
Thick and thin-film circuits
BSR56,215 More Descriptions
Trans Jfet N-Ch 40V 50Ma Si 3-Pin To-236Ab T/R
20 mA 40 V N-CHANNEL Si SMALL SIGNAL JFET
Small Signal Field-Effect Transistor, 0.02A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET
IC MTR DRV BIPLR 2.7-5.5V 44SSOP
BSR56; BSR57; BSR58 - N-channel FETs
RF SMALL SIGNAL TRANSISTOR MOSFET
Product Comparison
The three parts on the right have similar specifications to BSR56,215.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Feedback Cap-Max (Crss)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    Current Drain (Id) - Max
    RoHS Status
    Drain Current-Max (Abs) (ID)
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Number of Pins
    Weight
    Pbfree Code
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Element Configuration
    Power Dissipation
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Resistance
    REACH SVHC
    Radiation Hardening
    Lead Free
    Breakdown Voltage
    Height
    Length
    Width
    View Compare
  • BSR56,215
    BSR56,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    BSR56
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    SWITCHING
    25Ohm
    40V
    JUNCTION
    0.3W
    5 pF
    50mA @ 15V
    4V @ 0.5nA
    40V
    25Ohm
    20mA
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSR58,215
    BSR58,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    BSR58
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    SWITCHING
    60Ohm
    40V
    JUNCTION
    0.225W
    5 pF
    8mA @ 15V
    800mV @ 0.5nA
    40V
    60Ohm
    -
    ROHS3 Compliant
    0.005A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    BSR56,215 vs BSR58,215
  • BSR56
    BSR56
    Fairchild/ON Semiconductor
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2008
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    -
    -
    BSR56
    -
    -
    -
    1
    -
    DEPLETION MODE
    -
    N-Channel
    SWITCHING
    -
    -
    JUNCTION
    -
    5 pF
    50mA @ 15V
    4V @ 0.5nA
    -
    25Ohm
    -
    ROHS3 Compliant
    -
    LAST SHIPMENTS (Last Updated: 3 days ago)
    7 Weeks
    Tin
    Surface Mount
    3
    30mg
    yes
    40V
    250mW
    50mA
    Single
    250mW
    750mV
    50mA
    -40V
    25Ohm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    BSR56,215 vs BSR56
  • BSR58
    BSR58
    Fairchild/ON Semiconductor
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2008
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    30
    BSR58
    -
    -
    -
    1
    -
    DEPLETION MODE
    -
    N-Channel
    SWITCHING
    -
    -
    JUNCTION
    -
    5 pF
    8mA @ 15V
    800mV @ 0.5nA
    -
    60Ohm
    -
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 3 days ago)
    39 Weeks
    -
    Surface Mount
    3
    30mg
    yes
    40V
    250mW
    50mA
    Single
    250mW
    40V
    80mA
    -40V
    60Ohm
    No SVHC
    No
    Lead Free
    40V
    970μm
    2.9mm
    1.3mm
    BSR56,215 vs BSR58
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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