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PMBFJ310,215

NXP USA Inc. PMBFJ310,215

Part Number:
PMBFJ310,215
Manufacturer:
NXP USA Inc.
Ventron No:
2496000-PMBFJ310,215
Description:
JFET N-CH 25V 250MW SOT23
ECAD Model:
Datasheet:
PMBFJ310,215

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Specifications
NXP USA Inc. PMBFJ310,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ310,215.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOW NOISE
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MBFJ310
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    250mW
  • FET Type
    N-Channel
  • Transistor Application
    AMPLIFIER
  • Input Capacitance (Ciss) (Max) @ Vds
    5pF @ 10V
  • JEDEC-95 Code
    TO-236AB
  • DS Breakdown Voltage-Min
    25V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.25W
  • Feedback Cap-Max (Crss)
    2.5 pF
  • Highest Frequency Band
    VERY HIGH FREQUENCY B
  • Current - Drain (Idss) @ Vds (Vgs=0)
    24mA @ 10V
  • Voltage - Cutoff (VGS off) @ Id
    2V @ 1μA
  • Voltage - Breakdown (V(BR)GSS)
    25V
  • Resistance - RDS(On)
    50Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBFJ310,215 Description
The  PMBFJ310,215 is a Symmetrical N-channel silicon junction field-effect transistor in a SOT23 package.

PMBFJ310,215 Features
Low noise
Interchangeability of drain and source connections
High gain

PMBFJ310,215 Applications
AM input stage in car radios
VHF amplifiers
Oscillators and mixers
PMBFJ310,215 More Descriptions
JFET N-CH 25V 250MW SOT23
RF JFET, N CH, 25V, 60MA, 3-SOT-23; Transistor Type:RF JFET; Drain Source Voltage Vds:25V; Continuous Drain Current Id:60mA; Power Dissipation Pd:250mW; RF Transistor Case:SOT-23; No. of Pins:3
JFET, RF, N CH, 25V, SOT-23-3; Collector Emitter Voltage V(br)ceo: -; Continuous Collector Current Ic: -; Base Input Resistor R1: -; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-23; No. of P
Transistor; Transistor Type:JFET; Breakdown Voltage, Vbr:-25V; Idss, Zero Gate Voltage Drain Current:24mA to 60mA; Gate-Source Cutoff Voltage Max, Vgs(off):-6.5V; Power Dissipation, Pd:250mW; No. of Pins:3 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PMBFJ310,215.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    JEDEC-95 Code
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Feedback Cap-Max (Crss)
    Highest Frequency Band
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    ECCN Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    View Compare
  • PMBFJ310,215
    PMBFJ310,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    LOW NOISE
    8541.21.00.75
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ310
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    AMPLIFIER
    5pF @ 10V
    TO-236AB
    25V
    JUNCTION
    0.25W
    2.5 pF
    VERY HIGH FREQUENCY B
    24mA @ 10V
    2V @ 1μA
    25V
    50Ohm
    ROHS3 Compliant
    -
    -
    -
    -
  • PMBF4392,215
    PMBF4392,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    -
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBF4392
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    SWITCHING
    14pF @ 20V
    -
    40V
    JUNCTION
    0.25W
    3.5 pF
    -
    25mA @ 20V
    2V @ 1nA
    40V
    -
    ROHS3 Compliant
    EAR99
    0.006A
    60Ohm
    PMBFJ310,215 vs PMBF4392,215
  • PMBFJ174,215
    PMBFJ174,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    -
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    MBFJ174
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    -
    30V
    JUNCTION
    0.3W
    -
    -
    20mA @ 15V
    5V @ 10nA
    30V
    85Ohm
    ROHS3 Compliant
    EAR99
    -
    85Ohm
    PMBFJ310,215 vs PMBFJ174,215
  • PMBFJ112,215
    PMBFJ112,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    -
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ112
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    40V
    JUNCTION
    0.3W
    -
    -
    5mA @ 15V
    5V @ 1μA
    40V
    50Ohm
    ROHS3 Compliant
    EAR99
    -
    50Ohm
    PMBFJ310,215 vs PMBFJ112,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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