2N5461G

ON Semiconductor 2N5461G

Part Number:
2N5461G
Manufacturer:
ON Semiconductor
Ventron No:
8752929-2N5461G
Description:
2N5461G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at Ventron
ECAD Model:
Datasheet:
2N5461G

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Specifications
ON Semiconductor 2N5461G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5461G.
  • Lifecycle Status
    OBSOLETE (Last Updated: 1 day ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~135°C TJ
  • Packaging
    Bulk
  • Published
    2001
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    LOW NOISE
  • HTS Code
    8541.21.00.95
  • Subcategory
    FET General Purpose Small Signal
  • Voltage - Rated DC
    -40V
  • Max Power Dissipation
    350mW
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    10mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    2N5461
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    350mW
  • FET Type
    P-Channel
  • Transistor Application
    AMPLIFIER
  • Input Capacitance (Ciss) (Max) @ Vds
    7pF @ 15V
  • Gate to Source Voltage (Vgs)
    40V
  • FET Technology
    JUNCTION
  • Feedback Cap-Max (Crss)
    2 pF
  • Current - Drain (Idss) @ Vds (Vgs=0)
    2mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    1V @ 1μA
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
2N5461G Description
The ON SEMI 2N5461G is a P?Channel JFET Amplifier.

2N5461G Features
Pb?Free Packages are Available*
Junction Temperature Range TJ ?65 to 135 °C
Storage Channel Temperature Range Tstg ?65 to 150 °C

2N5461G Applications
General Uses

2N5461G More Descriptions
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92
SS T092 JFET PCH 40V -LEAD FREE
French Electronic Distributor since 1988
JFET; Transistor Polarity:P Channel; Breakdown Voltage, V(br)gss:40V; Zero Gate Voltage Drain Current Min, Idss:-2mA; Zero Gate Voltage Drain Current Max, Idss:-9mA; Gate-Source Cutoff Voltage Max, Vgs(off):7.5V; Current Rating:10mA RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to 2N5461G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    Gate to Source Voltage (Vgs)
    FET Technology
    Feedback Cap-Max (Crss)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    RoHS Status
    Lead Free
    Voltage - Cutoff (VGS off) @ Id:
    Voltage - Breakdown (V(BR)GSS):
    Supplier Device Package:
    Series:
    Resistance - RDS(On):
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    FET Type:
    Drain to Source Voltage (Vdss):
    Current - Drain (Idss) @ Vds (Vgs=0):
    View Compare
  • 2N5461G
    2N5461G
    OBSOLETE (Last Updated: 1 day ago)
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    SILICON
    -65°C~135°C TJ
    Bulk
    2001
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    LOW NOISE
    8541.21.00.95
    FET General Purpose Small Signal
    -40V
    350mW
    BOTTOM
    260
    10mA
    40
    2N5461
    3
    Not Qualified
    1
    Single
    DEPLETION MODE
    350mW
    P-Channel
    AMPLIFIER
    7pF @ 15V
    40V
    JUNCTION
    2 pF
    2mA @ 15V
    1V @ 1μA
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CP232V-2N5486-CT
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Active
    -
    -
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  • 2N5461
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1V @ 1µA
    40V
    TO-92-3
    -
    -
    350mW
    Bulk
    TO-226-3, TO-92-3 (TO-226AA)
    -55°C ~ 150°C (TJ)
    Through Hole
    7pF @ 15V
    P-Channel
    -
    2mA @ 15V
  • 2N5457
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    500mV @ 10nA
    25V
    TO-92-3
    -
    -
    625mW
    Bulk
    TO-226-3, TO-92-3 (TO-226AA)
    -55°C ~ 150°C (TJ)
    Through Hole
    7pF @ 15V
    N-Channel
    -
    1mA @ 15V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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