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ZXTN25100DFHTA

Diodes Incorporated ZXTN25100DFHTA

Part Number:
ZXTN25100DFHTA
Manufacturer:
Diodes Incorporated
Ventron No:
3584996-ZXTN25100DFHTA
Description:
TRANS NPN 100V 2.5A SOT23-3
ECAD Model:
Datasheet:
ZXTN25100DFHTA

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Specifications
Diodes Incorporated ZXTN25100DFHTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN25100DFHTA.
  • Factory Lead Time
    11 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.81W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    175MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    ZXTN25100D
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.81W
  • Power - Max
    1.25W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    175MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    2.5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    300 @ 10mA 2V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    330mV @ 250mA, 2.5A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    175MHz
  • Collector Emitter Saturation Voltage
    330mV
  • Max Breakdown Voltage
    100V
  • Collector Base Voltage (VCBO)
    180V
  • Emitter Base Voltage (VEBO)
    7V
  • Height
    1mm
  • Length
    3.05mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXTN25100DFHTA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 330mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 175MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 2.5A volts.

ZXTN25100DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 250mA, 2.5A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz


ZXTN25100DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25100DFHTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ZXTN25100DFHTA More Descriptions
100V 1.25W 300@10mA,2V 2.5A NPN SOT-23 Bipolar Transistors - BJT ROHS
ZXTN25100 Series 100 V 2.5 A 1.25 W NPN Medium Power Transistor - SOT23
Trans,NPN,Transistor,GP,100V 2.5A SOT23 | Diodes Inc ZXTN25100DFHTA
Trans GP BJT NPN 100V 2.5A 1810mW Automotive 3-Pin SOT-23 T/R
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:175MHz; Power Dissipation Pd:1.25W; DC Collector Current:2.5A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:95mV; Continuous Collector Current Ic Max:2.5A; Current Gain Hfe Max:900; Current Ic Continuous a Max:2.5A; Current Ic hFE:10mA; Current Ic hfe -Do Not Use See ID 1182:10mA; DC Current Gain Hfe Max:900; DC Current Gain Hfe Min:300; Gain Bandwidth ft Typ:175MHz; Hfe Min:300; Hfe Typ:450; Hfe Typ:450; Package / Case:SOT-23; Power Dissipation Pd:1.25W; Power Dissipation Ptot Max:1.25W; Termination Type:SMD; Voltage Vcbo:180V
Product Comparison
The three parts on the right have similar specifications to ZXTN25100DFHTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage - Rated DC
    Current Rating
    JESD-30 Code
    Case Connection
    Continuous Collector Current
    View Compare
  • ZXTN25100DFHTA
    ZXTN25100DFHTA
    Diodes Incorporated
    11 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1.81W
    DUAL
    GULL WING
    260
    175MHz
    40
    ZXTN25100D
    3
    1
    Single
    1.81W
    1.25W
    SWITCHING
    175MHz
    NPN
    NPN
    100V
    2.5A
    300 @ 10mA 2V
    50nA ICBO
    330mV @ 250mA, 2.5A
    100V
    175MHz
    330mV
    100V
    180V
    7V
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • ZXTN08400BFFTA
    ZXTN08400BFFTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-23-3 Flat Leads
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    2W
    DUAL
    GULL WING
    260
    40MHz
    40
    ZXTN08400B
    3
    1
    Single
    2W
    1.5W
    SWITCHING
    40MHz
    NPN
    NPN
    400V
    500mA
    100 @ 50mA 5V
    50nA ICBO
    175mV @ 100mA, 500mA
    400V
    40MHz
    175mV
    400V
    450V
    7V
    1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    ZXTN25100DFHTA vs ZXTN08400BFFTA
  • ZXTN2007ZTA
    ZXTN2007ZTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    2.1W
    -
    FLAT
    260
    140MHz
    40
    ZXTN2007
    3
    1
    Single
    2.1W
    -
    SWITCHING
    140MHz
    NPN
    NPN
    30V
    6A
    100 @ 1A 1V
    50nA ICBO
    190mV @ 300mA, 6.5A
    30V
    140MHz
    -
    30V
    80V
    7V
    1.5mm
    4.5mm
    2.48mm
    -
    No
    ROHS3 Compliant
    Lead Free
    30V
    6A
    R-PSSO-F3
    COLLECTOR
    6A
    ZXTN25100DFHTA vs ZXTN2007ZTA
  • ZXTN5551FLTA
    ZXTN5551FLTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    Other Transistors
    330mW
    DUAL
    GULL WING
    260
    130MHz
    40
    ZXTN5551
    3
    1
    Single
    330mW
    -
    -
    130MHz
    NPN
    NPN
    160V
    600mA
    80 @ 10mA 5V
    50nA ICBO
    200mV @ 5mA, 50mA
    160V
    130MHz
    -
    160V
    180V
    6V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    ZXTN25100DFHTA vs ZXTN5551FLTA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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