Diodes Incorporated ZXTN2040FTA
- Part Number:
- ZXTN2040FTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585320-ZXTN2040FTA
- Description:
- TRANS NPN 40V 1A SOT23-3
- Datasheet:
- ZXTN2040FTA
Diodes Incorporated ZXTN2040FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN2040FTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTN2040
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- Height1mm
- Length3.05mm
- Width1.4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTN2040FTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 1A volts.
ZXTN2040FTA Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZXTN2040FTA Applications
There are a lot of Diodes Incorporated
ZXTN2040FTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 1A volts.
ZXTN2040FTA Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZXTN2040FTA Applications
There are a lot of Diodes Incorporated
ZXTN2040FTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTN2040FTA More Descriptions
ZXTN2040F Series 40 V 1 A NPN Silicon Planar Medium Power Transistor - SOT-23-3
Trans GP BJT NPN 40V 1A 350mW 3-Pin SOT-23 T/R
Transistor,NPN,1A,40V,SOT23 | Diodes Inc ZXTN2040FTA
NPN TRANSISTOR 40V 1A SOT23 RoHSconf
Trans GP BJT NPN 40V 1A 350mW 3-Pin SOT-23 T/R
Transistor,NPN,1A,40V,SOT23 | Diodes Inc ZXTN2040FTA
NPN TRANSISTOR 40V 1A SOT23 RoHSconf
The three parts on the right have similar specifications to ZXTN2040FTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeJESD-30 CodeCase ConnectionContinuous Collector CurrentREACH SVHCView Compare
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ZXTN2040FTA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors40V350mWDUALGULL WING2601A150MHz40ZXTN204031Single350mWSWITCHING150MHzNPNNPN40V1A300 @ 500mA 5V100nA500mV @ 100mA, 1A40V150MHz500mV40V40V5V1mm3.05mm1.4mmNoROHS3 CompliantLead Free-----
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15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3noActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors100V2.1W-FLAT2604.5A130MHz40-31Single2.1WSWITCHING130MHzNPNNPN100V4.5A100 @ 2A 2V50nA ICBO195mV @ 500mA, 5A100V130MHz195mV100V200V7V1.6mm4.6mm2.6mmNoROHS3 CompliantLead FreeR-PSSO-F3COLLECTOR4.5ANo SVHC
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed--350mWDUALGULL WING260-260MHz40ZXTN25012E31Single350mW-260MHzNPNNPN12V2A500 @ 10mA 2V50nA ICBO300mV @ 100mA, 5A12V260MHz300mV12V20V7V1.02mm3.04mm1.4mmNoROHS3 CompliantLead Free----
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15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-30V2.1W-FLAT2606A140MHz40ZXTN200731Single2.1WSWITCHING140MHzNPNNPN30V6A100 @ 1A 1V50nA ICBO190mV @ 300mA, 6.5A30V140MHz-30V80V7V1.5mm4.5mm2.48mmNoROHS3 CompliantLead FreeR-PSSO-F3COLLECTOR6A-
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