Diodes Incorporated ZXTN19100CZTA
- Part Number:
- ZXTN19100CZTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845336-ZXTN19100CZTA
- Description:
- TRANS NPN 100V 5.25A SOT89
- Datasheet:
- ZXTN19100CZTA
Diodes Incorporated ZXTN19100CZTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN19100CZTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight130.492855mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation4.46W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTN19100C
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation4.46W
- Case ConnectionCOLLECTOR
- Power - Max2.4W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current5.25A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA 2V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic350mV @ 525mA, 5.25A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage65mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)200V
- Emitter Base Voltage (VEBO)7V
- Continuous Collector Current5.25A
- Height1.6mm
- Length4.6mm
- Width2.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTN19100CZTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 65mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 525mA, 5.25A.Single BJT transistor is recommended to keep the continuous collector voltage at 5.25A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 150MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 5.25A volts at Single BJT transistors maximum.
ZXTN19100CZTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 65mV
the vce saturation(Max) is 350mV @ 525mA, 5.25A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CZTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CZTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 65mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 525mA, 5.25A.Single BJT transistor is recommended to keep the continuous collector voltage at 5.25A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 150MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 5.25A volts at Single BJT transistors maximum.
ZXTN19100CZTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 65mV
the vce saturation(Max) is 350mV @ 525mA, 5.25A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CZTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CZTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTN19100CZTA More Descriptions
ZXTN19100CZ Series NPN 100 V 5.25 A Medium Power Transistor SMT - SOT-89-3
100V 2.4W 200@100mA,2V 5.25A NPN SOT-89 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 100V 5.25A 4460mW 4-Pin(3 Tab) SOT-89 T/R
Trans, Npn, 100V, 5.25A, 150Deg C, 2.4W Rohs Compliant: Yes |Diodes Inc. ZXTN19100CZTA
Power Bipolar Transistor, 5.25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
100V 2.4W 200@100mA,2V 5.25A NPN SOT-89 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 100V 5.25A 4460mW 4-Pin(3 Tab) SOT-89 T/R
Trans, Npn, 100V, 5.25A, 150Deg C, 2.4W Rohs Compliant: Yes |Diodes Inc. ZXTN19100CZTA
Power Bipolar Transistor, 5.25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
The three parts on the right have similar specifications to ZXTN19100CZTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Rated DCTerminal PositionCurrent RatinghFE MinView Compare
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ZXTN19100CZTA15 WeeksSurface MountSurface MountTO-243AA4130.492855mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors4.46WFLAT260150MHz40ZXTN19100C3R-PSSO-F31Single4.46WCOLLECTOR2.4WSWITCHING150MHzNPNNPN100V5.25A200 @ 100mA 2V50nA ICBO350mV @ 525mA, 5.25A100V150MHz65mV100V200V7V5.25A1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free-----
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15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-2.1WFLAT260150MHz40ZXTN20054-1Single2.1WCOLLECTOR-SWITCHING150MHzNPNNPN25V5.5A300 @ 1A 1V20nA ICBO200mV @ 150mA, 6.5A25V150MHz200mV25V60V7V5.5A1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free25VDUAL5.5A200
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-350mWGULL WING260260MHz40ZXTN25012E3-1Single350mW---260MHzNPNNPN12V2A500 @ 10mA 2V50nA ICBO300mV @ 100mA, 5A12V260MHz300mV12V20V7V-1.02mm3.04mm1.4mm-NoROHS3 CompliantLead Free-DUAL--
-
15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-2.1WFLAT260140MHz40ZXTN20073R-PSSO-F31Single2.1WCOLLECTOR-SWITCHING140MHzNPNNPN30V6A100 @ 1A 1V50nA ICBO190mV @ 300mA, 6.5A30V140MHz-30V80V7V6A1.5mm4.5mm2.48mm-NoROHS3 CompliantLead Free30V-6A-
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