Diodes Incorporated ZVP2120A
- Part Number:
- ZVP2120A
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2488255-ZVP2120A
- Description:
- MOSFET P-CH 200V 0.12A TO92-3
- Datasheet:
- ZVP2120A
Diodes Incorporated ZVP2120A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP2120A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-200V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Current Rating-120mA
- Pin Count3
- JESD-30 CodeO-PBCY-W3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max700mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation700mW
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs25 Ω @ 150mA, 10V
- Vgs(th) (Max) @ Id3.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120mA Ta
- Rise Time15ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)120mA
- Gate to Source Voltage (Vgs)20V
- Feedback Cap-Max (Crss)7 pF
- Height4.01mm
- Length4.77mm
- Width2.41mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVP2120A Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120mA.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
ZVP2120A Features
a continuous drain current (ID) of 120mA
the turn-off delay time is 12 ns
a 200V drain to source voltage (Vdss)
ZVP2120A Applications
There are a lot of Diodes Incorporated
ZVP2120A applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120mA.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
ZVP2120A Features
a continuous drain current (ID) of 120mA
the turn-off delay time is 12 ns
a 200V drain to source voltage (Vdss)
ZVP2120A Applications
There are a lot of Diodes Incorporated
ZVP2120A applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZVP2120A More Descriptions
Trans MOSFET P-CH 200V 0.12A 3-Pin E-Line
MOSFET P-CH 200V 0.12A TO92-3
French Electronic Distributor since 1988
MOSFETs P-Chnl 200V
OEMs, CMs ONLY (NO BROKERS)
MOSFET P-CH 200V 0.12A TO92-3
French Electronic Distributor since 1988
MOSFETs P-Chnl 200V
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to ZVP2120A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingPin CountJESD-30 CodeQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Feedback Cap-Max (Crss)HeightLengthWidthRoHS StatusLead FreeJESD-609 CodeTerminal FinishPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Transistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxConfigurationCase ConnectionDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)View Compare
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ZVP2120AThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)453.59237mgSILICON-55°C~150°C TJBulk2012Obsolete1 (Unlimited)3EAR99Other Transistors-200VMOSFET (Metal Oxide)BOTTOMWIRE-120mA3O-PBCY-W3Not Qualified11700mW TaSingleENHANCEMENT MODE700mW7 nsP-Channel25 Ω @ 150mA, 10V3.5V @ 1mA100pF @ 25V120mA Ta15ns200V10V±20V15 ns12 ns120mA20V7 pF4.01mm4.77mm2.41mmRoHS CompliantLead Free-------------
-
Through HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012Obsolete1 (Unlimited)3EAR99--60VMOSFET (Metal Oxide)-WIRE-280mA3R-PSIP-W3Not Qualified11700mW TaSingleENHANCEMENT MODE700mW7 nsP-Channel5 Ω @ 500mA, 10V3.5V @ 1mA100pF @ 18V280mA Ta15ns60V10V±20V15 ns12 ns280mA20V----RoHS CompliantLead Freee3Matte Tin (Sn)260unknown40SWITCHING0.28A5Ohm----
-
Surface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012Obsolete1 (Unlimited)4EAR99--200VMOSFET (Metal Oxide)DUALGULL WING-300mA4R-PDSO-G4Not Qualified112W Ta-ENHANCEMENT MODE2W7 nsP-Channel25 Ω @ 150mA, 10V3.5V @ 1mA100pF @ 25V200mA Ta7ns200V10V-15 ns12 ns200mA20V-1.65mm6.7mm3.7mmRoHS CompliantLead Freee3MATTE TIN260unknown40SWITCHING0.3A-SINGLEDRAIN-200V-
-
Surface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)1997Obsolete1 (Unlimited)4EAR99--100VMOSFET (Metal Oxide)DUALGULL WING-350mA4R-PDSO-G4Not Qualified112W Ta-ENHANCEMENT MODE2W7 nsP-Channel8 Ω @ 375mA, 10V3.5V @ 1mA100pF @ 25V310mA Ta15ns100V10V±20V15 ns12 ns310mA20V----RoHS CompliantLead Freee3MATTE TIN260unknown40SWITCHING-8OhmSINGLEDRAIN-100V3A
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