Diodes Incorporated ZVP2120ASTOA
- Part Number:
- ZVP2120ASTOA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2851640-ZVP2120ASTOA
- Description:
- MOSFET P-CH 200V 0.12A TO92-3
- Datasheet:
- ZVP2120ASTOA
Diodes Incorporated ZVP2120ASTOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP2120ASTOA.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- HTS Code8541.29.00.95
- Voltage - Rated DC-200V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating-120mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max700mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation700mW
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25 Ω @ 150mA, 10V
- Vgs(th) (Max) @ Id3.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120mA Ta
- Rise Time15ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)120mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.12A
- Drain to Source Breakdown Voltage-200V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVP2120ASTOA Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -200V.There is no drain current on this device since the maximum continuous current it can conduct is 0.12A.As a result of its turn-off delay time, which is 12 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
ZVP2120ASTOA Features
a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 12 ns
a 200V drain to source voltage (Vdss)
ZVP2120ASTOA Applications
There are a lot of Diodes Incorporated
ZVP2120ASTOA applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -200V.There is no drain current on this device since the maximum continuous current it can conduct is 0.12A.As a result of its turn-off delay time, which is 12 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
ZVP2120ASTOA Features
a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 12 ns
a 200V drain to source voltage (Vdss)
ZVP2120ASTOA Applications
There are a lot of Diodes Incorporated
ZVP2120ASTOA applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
ZVP2120ASTOA More Descriptions
Trans MOSFET P-CH 200V 0.12A 3-Pin E-Line
Compliant Through Hole 15 ns Lead Free Bulk 15 ns 25 Ω TO-92
MOSFET P-CH 200V 0.12A TO92-3
MOSFET P-CH 200V 120MA E-LINE
MOSFETs P-Chnl 200V
Compliant Through Hole 15 ns Lead Free Bulk 15 ns 25 Ω TO-92
MOSFET P-CH 200V 0.12A TO92-3
MOSFET P-CH 200V 120MA E-LINE
MOSFETs P-Chnl 200V
The three parts on the right have similar specifications to ZVP2120ASTOA.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageRoHS StatusLead FreeWeightNumber of ChannelsTurn On Delay TimeTerminal PositionConfigurationCase ConnectionHeightLengthWidthDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)View Compare
-
ZVP2120ASTOAThrough HoleThrough HoleE-Line-3SILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)3EAR99MATTE TIN8541.29.00.95-200VMOSFET (Metal Oxide)WIRE260unknown-120mA403R-PSIP-W3Not Qualified1700mW TaSingleENHANCEMENT MODE700mWP-ChannelSWITCHING25 Ω @ 150mA, 10V3.5V @ 1mA100pF @ 25V120mA Ta15ns200V10V±20V15 ns12 ns120mA20V0.12A-200VRoHS CompliantLead Free------------
-
Through HoleThrough HoleE-Line-3--55°C~150°C TJTape & Reel (TR)2012-Obsolete1 (Unlimited)-----100VMOSFET (Metal Oxide)--unknown-230mA-3---700mW TaSingle-700mWP-Channel-8 Ω @ 375mA, 10V3.5V @ 1mA100pF @ 25V230mA Ta15ns100V10V±20V15 ns12 ns230mA20V--100VRoHS CompliantLead Free453.59237mg17 ns--------
-
Surface MountSurface MountTO-261-4, TO-261AASILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)4EAR99MATTE TIN--200VMOSFET (Metal Oxide)GULL WING260unknown-300mA404R-PDSO-G4Not Qualified12W Ta-ENHANCEMENT MODE2WP-ChannelSWITCHING25 Ω @ 150mA, 10V3.5V @ 1mA100pF @ 25V200mA Ta7ns200V10V-15 ns12 ns200mA20V0.3A-200VRoHS CompliantLead Free7.994566mg17 nsDUALSINGLEDRAIN1.65mm6.7mm3.7mm--
-
Surface MountSurface MountTO-261-4, TO-261AASILICON-55°C~150°C TJTape & Reel (TR)1997e3Obsolete1 (Unlimited)4EAR99MATTE TIN--100VMOSFET (Metal Oxide)GULL WING260unknown-350mA404R-PDSO-G4Not Qualified12W Ta-ENHANCEMENT MODE2WP-ChannelSWITCHING8 Ω @ 375mA, 10V3.5V @ 1mA100pF @ 25V310mA Ta15ns100V10V±20V15 ns12 ns310mA20V--100VRoHS CompliantLead Free7.994566mg17 nsDUALSINGLEDRAIN---8Ohm3A
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 April 2024
DRV8870DDAR H-Bridge Motor Driver: Alternatives, Functional Modes, Features and More
Ⅰ. Overview of DRV8870DDARⅡ. Device functional modesⅢ. Technical parameters of DRV8870DDARⅣ. What are the power consumption characteristics of DRV8870DDAR?Ⅴ. DRV8870DDAR circuit diagramⅥ. Power supply recommendations of DRV8870DDARⅦ. Functional... -
22 April 2024
74LS161 4-BIt Synchronous Counter Functions and Applications
Ⅰ. Introduction to 74LS161Ⅱ. Pin arrangement of 74LS161Ⅲ. Working principle of 74LS161Ⅳ. 74LS161 function tableⅤ. Basic applications of 74LS161Ⅵ. How to choose the appropriate 74LS161 counter?Ⅶ. The difference... -
23 April 2024
LNK304PN Manufacturer, Highlights, Functions and Other Details
Ⅰ. LNK304PN overviewⅡ. Manufacturer of LNK304PNⅢ. Highlights of LNK304PNⅣ. Pin functional description of LNK304PNⅤ. Functions of LNK304PNⅥ. How to judge the quality of LNK304PNⅦ. How to implement the... -
23 April 2024
LM331 Frequency to Voltage Converter Functions, Working Principle and Application Circuit
Ⅰ. LM331 descriptionⅡ. Functions and roles of LM331Ⅲ. LM331 internal block diagramⅣ. Working principle of LM331Ⅴ. Application circuit of LM331Ⅵ. Specific applications of LM331Ⅶ. Precautions for using LM331The...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.