Diodes Incorporated ZVN3310FTA
- Part Number:
- ZVN3310FTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478104-ZVN3310FTA
- Description:
- MOSFET N-CH 100V .1A SOT23-3
- Datasheet:
- ZVN3310FTA
Diodes Incorporated ZVN3310FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN3310FTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance10Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Voltage100V
- Power Dissipation-Max330mW Ta
- Element ConfigurationSingle
- Current100mA
- Operating ModeENHANCEMENT MODE
- Power Dissipation330mW
- Turn On Delay Time3 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds40pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100mA Ta
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time4 ns
- Continuous Drain Current (ID)100mA
- Threshold Voltage2.4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Nominal Vgs2.4 V
- Feedback Cap-Max (Crss)5 pF
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVN3310FTA Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 40pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.4V.In addition to reducing power consumption, this device uses drive voltage (10V).
ZVN3310FTA Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 4 ns
a threshold voltage of 2.4V
ZVN3310FTA Applications
There are a lot of Diodes Incorporated
ZVN3310FTA applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 40pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.4V.In addition to reducing power consumption, this device uses drive voltage (10V).
ZVN3310FTA Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 4 ns
a threshold voltage of 2.4V
ZVN3310FTA Applications
There are a lot of Diodes Incorporated
ZVN3310FTA applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
ZVN3310FTA More Descriptions
On a Reel of 3000, ZVN3310FTA N-Channel MOSFET, 100 mA, 100 V, 3-Pin SOT-23 Diodes Inc
Trans MOSFET N-CH 100V 0.1A Automotive 3-Pin SOT-23 T/R
ZVN3310F Series 100 V 10 Ohm N-Channel Enhancement Mode MOSFET- SOT-23
MOSFET Operating temperature: -55... 150 °C Housing type: SOT-23 Polarity: N Variants: N-Channel, Enh. Power dissipation: 0.33 W
MOSFET, N SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:0.1A; Resistance, Rds On:10ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SOT-23; ;RoHS Compliant: Yes
MOSFET, N SOT-23 REEL 3K; Transistor Polarity: N Channel; Continuous Drain Current Id: 100mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 100mA; Current Temperature: 25°C; External Depth: 2.5mm; External Length / Height: 1.12mm; External Width: 3.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 330mW; Pulse Current Idm: 2A; Reel Quantity: 3000; SMD Marking: MF; Tape Width: 8mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.4V
Trans MOSFET N-CH 100V 0.1A Automotive 3-Pin SOT-23 T/R
ZVN3310F Series 100 V 10 Ohm N-Channel Enhancement Mode MOSFET- SOT-23
MOSFET Operating temperature: -55... 150 °C Housing type: SOT-23 Polarity: N Variants: N-Channel, Enh. Power dissipation: 0.33 W
MOSFET, N SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:0.1A; Resistance, Rds On:10ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SOT-23; ;RoHS Compliant: Yes
MOSFET, N SOT-23 REEL 3K; Transistor Polarity: N Channel; Continuous Drain Current Id: 100mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 100mA; Current Temperature: 25°C; External Depth: 2.5mm; External Length / Height: 1.12mm; External Width: 3.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 330mW; Pulse Current Idm: 2A; Reel Quantity: 3000; SMD Marking: MF; Tape Width: 8mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.4V
The three parts on the right have similar specifications to ZVN3310FTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain Current-Max (Abs) (ID)HTS CodeReach Compliance CodeJESD-30 CodeQualification StatusConfigurationMax Power DissipationDrain to Source Voltage (Vdss)Polarity/Channel TypeInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxView Compare
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ZVN3310FTA17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2009e3yesActive1 (Unlimited)3SMD/SMTEAR9910OhmMatte Tin (Sn)FET General Purpose Powers100VMOSFET (Metal Oxide)DUALGULL WING260100mA40311100V330mW TaSingle100mAENHANCEMENT MODE330mW3 nsN-ChannelSWITCHING10 Ω @ 500mA, 10V2.4V @ 1mA40pF @ 25V100mA Ta5ns10V±20V5 ns4 ns100mA2.4V20V100V100V2.4 V5 pF1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free--------------
-
17 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk2006e3yesActive1 (Unlimited)3-EAR995OhmMatte Tin (Sn)FET General Purpose Power60VMOSFET (Metal Oxide)BOTTOMWIRE260270mA40311-625mW TaSingle-ENHANCEMENT MODE625mW5 nsN-Channel-5 Ω @ 500mA, 10V2.4V @ 1mA35pF @ 18V270mA Ta7ns10V±20V7 ns6 ns270mA2.4V20V60V--8 pF4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free0.27A------------
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-Through HoleThrough HoleE-Line-3--SILICON-Tape & Reel (TR)-e3-Obsolete1 (Unlimited)3-EAR99-MATTE TIN-200VMOSFET (Metal Oxide)SINGLEWIRE260100mA4031--625mW Ta--ENHANCEMENT MODE330mW-N-ChannelSWITCHING25 Ω @ 100mA, 10V3V @ 1mA45pF @ 25V100mA Ta-10V±20V--100mA-20V200V--------RoHS CompliantLead Free0.1A8541.29.00.95unknownR-PSIP-W3Not QualifiedSINGLE-------
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-Through Hole-TO-226-331.437803gSILICON-Tape & Reel (TR)2009e3-Obsolete1 (Unlimited)3-EAR99-Matte Tin (Sn)-200V-SINGLEWIRE260100mA40311----ENHANCEMENT MODE330mW--SWITCHING---------100mA-20V200V-------NoROHS3 CompliantLead Free-----SINGLE625mW200VN-CHANNEL45pFMETAL-OXIDE SEMICONDUCTOR25Ohm25 Ω
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