ZVN3310FTA

Diodes Incorporated ZVN3310FTA

Part Number:
ZVN3310FTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478104-ZVN3310FTA
Description:
MOSFET N-CH 100V .1A SOT23-3
ECAD Model:
Datasheet:
ZVN3310FTA

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Specifications
Diodes Incorporated ZVN3310FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN3310FTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    10Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    100V
  • Power Dissipation-Max
    330mW Ta
  • Element Configuration
    Single
  • Current
    100mA
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    330mW
  • Turn On Delay Time
    3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    40pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    100mA Ta
  • Rise Time
    5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5 ns
  • Turn-Off Delay Time
    4 ns
  • Continuous Drain Current (ID)
    100mA
  • Threshold Voltage
    2.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Dual Supply Voltage
    100V
  • Nominal Vgs
    2.4 V
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVN3310FTA Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 40pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.4V.In addition to reducing power consumption, this device uses drive voltage (10V).

ZVN3310FTA Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 4 ns
a threshold voltage of 2.4V


ZVN3310FTA Applications
There are a lot of Diodes Incorporated
ZVN3310FTA applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
ZVN3310FTA More Descriptions
On a Reel of 3000, ZVN3310FTA N-Channel MOSFET, 100 mA, 100 V, 3-Pin SOT-23 Diodes Inc
Trans MOSFET N-CH 100V 0.1A Automotive 3-Pin SOT-23 T/R
ZVN3310F Series 100 V 10 Ohm N-Channel Enhancement Mode MOSFET- SOT-23
MOSFET Operating temperature: -55... 150 °C Housing type: SOT-23 Polarity: N Variants: N-Channel, Enh. Power dissipation: 0.33 W
MOSFET, N SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:0.1A; Resistance, Rds On:10ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SOT-23; ;RoHS Compliant: Yes
MOSFET, N SOT-23 REEL 3K; Transistor Polarity: N Channel; Continuous Drain Current Id: 100mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 100mA; Current Temperature: 25°C; External Depth: 2.5mm; External Length / Height: 1.12mm; External Width: 3.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 330mW; Pulse Current Idm: 2A; Reel Quantity: 3000; SMD Marking: MF; Tape Width: 8mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.4V
Product Comparison
The three parts on the right have similar specifications to ZVN3310FTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain Current-Max (Abs) (ID)
    HTS Code
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Configuration
    Max Power Dissipation
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Input Capacitance
    FET Technology
    Drain to Source Resistance
    Rds On Max
    View Compare
  • ZVN3310FTA
    ZVN3310FTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    10Ohm
    Matte Tin (Sn)
    FET General Purpose Powers
    100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    100mA
    40
    3
    1
    1
    100V
    330mW Ta
    Single
    100mA
    ENHANCEMENT MODE
    330mW
    3 ns
    N-Channel
    SWITCHING
    10 Ω @ 500mA, 10V
    2.4V @ 1mA
    40pF @ 25V
    100mA Ta
    5ns
    10V
    ±20V
    5 ns
    4 ns
    100mA
    2.4V
    20V
    100V
    100V
    2.4 V
    5 pF
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN3306A
    17 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    5Ohm
    Matte Tin (Sn)
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    BOTTOM
    WIRE
    260
    270mA
    40
    3
    1
    1
    -
    625mW Ta
    Single
    -
    ENHANCEMENT MODE
    625mW
    5 ns
    N-Channel
    -
    5 Ω @ 500mA, 10V
    2.4V @ 1mA
    35pF @ 18V
    270mA Ta
    7ns
    10V
    ±20V
    7 ns
    6 ns
    270mA
    2.4V
    20V
    60V
    -
    -
    8 pF
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    0.27A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN3320ASTOB
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    -
    SILICON
    -
    Tape & Reel (TR)
    -
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    -
    MATTE TIN
    -
    200V
    MOSFET (Metal Oxide)
    SINGLE
    WIRE
    260
    100mA
    40
    3
    1
    -
    -
    625mW Ta
    -
    -
    ENHANCEMENT MODE
    330mW
    -
    N-Channel
    SWITCHING
    25 Ω @ 100mA, 10V
    3V @ 1mA
    45pF @ 25V
    100mA Ta
    -
    10V
    ±20V
    -
    -
    100mA
    -
    20V
    200V
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    0.1A
    8541.29.00.95
    unknown
    R-PSIP-W3
    Not Qualified
    SINGLE
    -
    -
    -
    -
    -
    -
    -
  • ZVN3320ASTOA
    -
    Through Hole
    -
    TO-226-3
    3
    1.437803g
    SILICON
    -
    Tape & Reel (TR)
    2009
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    -
    Matte Tin (Sn)
    -
    200V
    -
    SINGLE
    WIRE
    260
    100mA
    40
    3
    1
    1
    -
    -
    -
    -
    ENHANCEMENT MODE
    330mW
    -
    -
    SWITCHING
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100mA
    -
    20V
    200V
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    SINGLE
    625mW
    200V
    N-CHANNEL
    45pF
    METAL-OXIDE SEMICONDUCTOR
    25Ohm
    25 Ω
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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