Transphorm TPH3208PS

Name: TPH3208PS
Brand: Transphorm
SKU: 2479110-TPH3208PS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TPH3208PS

Manufacturer:: Transphorm

Ventron No:: 2479110-TPH3208PS

Description:: GAN FET 650V 20A TO220

ECAD Model:

Datasheet:: TPH3208PS

Specifications

Transphorm TPH3208PS technical specifications, attributes, parameters and parts with similar specifications to Transphorm TPH3208PS.

Factory Lead Time
12 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2016
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
GaNFET (Cascode Gallium Nitride FET)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
96W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
130m Ω @ 13A, 8V
Vgs(th) (Max) @ Id
2.6V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 400V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 8V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±18V
RoHS Status
RoHS Compliant

Description

TPH3208PS Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 760pF @ 400V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

TPH3208PS Features
a 650V drain to source voltage (Vdss)

TPH3208PS Applications
There are a lot of Transphorm
TPH3208PS applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

TPH3208PS More Descriptions

GANFET N-CH 650V 20A TO220AB

Product Comparison

The three parts on the right have similar specifications to TPH3208PS.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Supplier Device Package

Series

Reach Compliance Code

View Compare
TPH3208PS

Transphorm

12 Weeks

Through Hole

TO-220-3

-55°C~150°C TJ

Tube

2016

yes

Active

1 (Unlimited)

GaNFET (Cascode Gallium Nitride FET)

NOT SPECIFIED

NOT SPECIFIED

96W Tc

N-Channel

130m Ω @ 13A, 8V

2.6V @ 300μA

760pF @ 400V

20A Tc

14nC @ 8V

650V

10V

±18V

RoHS Compliant

-

-

-

-
TPH3R003PL,LQ

Toshiba Semiconductor and Storage

16 Weeks

Surface Mount

8-PowerVDFN

175°C TJ

Tape & Reel (TR)

2016

-

Active

1 (Unlimited)

MOSFET (Metal Oxide)

-

-

90W Tc

N-Channel

4.2mOhm @ 44A, 4.5V

2.1V @ 300μA

3825pF @ 15V

88A Tc

50nC @ 10V

30V

4.5V 10V

±20V

RoHS Compliant

8-SOP Advance (5x5)

U-MOSIX-H

-

TPH3208PS vs TPH3R003PL,LQ
TPH3206LDB

Transphorm

-

Surface Mount

4-PowerDFN

-55°C~150°C TJ

Tube

2017

-

Obsolete

3 (168 Hours)

GaNFET (Gallium Nitride)

-

-

81W Tc

N-Channel

180m Ω @ 10A, 8V

2.6V @ 500μA

720pF @ 480V

16A Tc

6.2nC @ 4.5V

650V

10V

±18V

-

-

-

-

TPH3208PS vs TPH3206LDB
TPH3208LDG

Transphorm

10 Weeks

Surface Mount

3-PowerDFN

-55°C~150°C TJ

Tube

2016

yes

Last Time Buy

3 (168 Hours)

GaNFET (Gallium Nitride)

-

-

96W Tc

N-Channel

130m Ω @ 13A, 8V

2.6V @ 300μA

760pF @ 400V

20A Tc

14nC @ 8V

650V

10V

±18V

RoHS Compliant

-

-

unknown

TPH3208PS vs TPH3208LDG