Transphorm TPH3206PS

Name: TPH3206PS
Brand: Transphorm
SKU: 2479095-TPH3206PS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TPH3206PS

Manufacturer:: Transphorm

Ventron No:: 2479095-TPH3206PS

Description:: GAN FET 600V 17A TO220

ECAD Model:

Datasheet:: TPH3206PS

Specifications

Transphorm TPH3206PS technical specifications, attributes, parameters and parts with similar specifications to Transphorm TPH3206PS.

Factory Lead Time
14 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2016
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
GaNFET (Gallium Nitride)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
96W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
180m Ω @ 11A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 480V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
9.3nC @ 4.5V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±18V
RoHS Status
RoHS Compliant

Description

TPH3206PS Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 760pF @ 480V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

TPH3206PS Features
a 600V drain to source voltage (Vdss)

TPH3206PS Applications
There are a lot of Transphorm
TPH3206PS applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

TPH3206PS More Descriptions

GaN HEMT 600V / 17A / 0,15 Ohm, TO220 Package
GANFET N-CH 600V 17A TO220AB

Product Comparison

The three parts on the right have similar specifications to TPH3206PS.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

View Compare
TPH3206PS

Transphorm

14 Weeks

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

2016

yes

Not For New Designs

1 (Unlimited)

GaNFET (Gallium Nitride)

NOT SPECIFIED

unknown

NOT SPECIFIED

96W Tc

N-Channel

180m Ω @ 11A, 8V

2.6V @ 500μA

760pF @ 480V

17A Tc

9.3nC @ 4.5V

600V

10V

±18V

RoHS Compliant

-
TPH3206LDB

Transphorm

-

Surface Mount

4-PowerDFN

-55°C~150°C TJ

Tube

2017

-

Obsolete

3 (168 Hours)

GaNFET (Gallium Nitride)

-

-

-

81W Tc

N-Channel

180m Ω @ 10A, 8V

2.6V @ 500μA

720pF @ 480V

16A Tc

6.2nC @ 4.5V

650V

10V

±18V

-

TPH3206PS vs TPH3206LDB
TPH3202LS

Transphorm

10 Weeks

Surface Mount

3-PowerDFN

-55°C~175°C TJ

Tube

2017

yes

Obsolete

3 (168 Hours)

GaNFET (Gallium Nitride)

-

unknown

-

65W Tc

N-Channel

350m Ω @ 5.5A, 8V

2.5V @ 250μA

760pF @ 480V

9A Tc

9.3nC @ 4.5V

600V

10V

±18V

Non-RoHS Compliant

TPH3206PS vs TPH3202LS
TPH3202LD

Transphorm

14 Weeks

Surface Mount

4-PowerDFN

-55°C~175°C TJ

Tube

2016

yes

Obsolete

3 (168 Hours)

GaNFET (Gallium Nitride)

-

unknown

-

65W Tc

N-Channel

350m Ω @ 5.5A, 8V

2.5V @ 250μA

760pF @ 480V

9A Tc

9.3nC @ 4.5V

600V

10V

±18V

Non-RoHS Compliant

TPH3206PS vs TPH3202LD