STW20NK50Z

STMicroelectronics STW20NK50Z

Part Number:
STW20NK50Z
Manufacturer:
STMicroelectronics
Ventron No:
3813625-STW20NK50Z
Description:
MOSFET N-CH 500V 17A TO-247
ECAD Model:
Datasheet:
STW20NK50Z

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Specifications
STMicroelectronics STW20NK50Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW20NK50Z.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    9.071847g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    270mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    17A
  • Base Part Number
    STW20N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    190W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    190W
  • Turn On Delay Time
    28 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    270m Ω @ 8.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    17A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    119nC @ 10V
  • Rise Time
    20ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    70 ns
  • Continuous Drain Current (ID)
    17A
  • Threshold Voltage
    3.75V
  • JEDEC-95 Code
    TO-247AC
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    68A
  • Avalanche Energy Rating (Eas)
    850 mJ
  • Height
    20.15mm
  • Length
    15.75mm
  • Width
    5.15mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STW20NK50Z Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 850 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2600pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 68A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STW20NK50Z Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 68A.
a threshold voltage of 3.75V


STW20NK50Z Applications
There are a lot of STMicroelectronics
STW20NK50Z applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STW20NK50Z More Descriptions
N-channel 500 V, 0.23 Ohm, 17 A SuperMESH(TM) Power MOSFET Zener-protected TO-247
MOSFET;N-Ch;VDSS 500V;RDS(ON) 0.23Ohm;ID 17A;TO-247;PD 190W;VGS /-30V;gFS 13S
N-Channel 500 V 0.27 Ohm Flange Mount SuperMESH Power Mosfet - TO-247
MOSFET N-CH 500V 17A TO-247 / Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-247 Tube
Power Field-Effect Transistor, 17A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:190W; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Id Max:17A; On State resistance @ Vgs = 10V:270mohm; Package / Case:TO-247; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to STW20NK50Z.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Position
    Configuration
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Pbfree Code
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Drain-source On Resistance-Max
    View Compare
  • STW20NK50Z
    STW20NK50Z
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    9.071847g
    SILICON
    150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    270mOhm
    Tin (Sn)
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    17A
    STW20N
    3
    1
    190W Tc
    Single
    ENHANCEMENT MODE
    190W
    28 ns
    N-Channel
    SWITCHING
    270m Ω @ 8.5A, 10V
    4.5V @ 100μA
    2600pF @ 25V
    17A Tc
    119nC @ 10V
    20ns
    10V
    ±30V
    15 ns
    70 ns
    17A
    3.75V
    TO-247AC
    30V
    500V
    68A
    850 mJ
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STW23NM50N
    ACTIVE (Last Updated: 7 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    SILICON
    150°C TJ
    Tube
    MDmesh™ II
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    190mOhm
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STW23N
    3
    1
    125W Tc
    -
    ENHANCEMENT MODE
    125W
    6.6 ns
    N-Channel
    SWITCHING
    190m Ω @ 8.5A, 10V
    4V @ 250μA
    1330pF @ 50V
    17A Tc
    45nC @ 10V
    19ns
    10V
    ±25V
    29 ns
    71 ns
    17A
    3V
    -
    25V
    -
    68A
    254 mJ
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    500V
    500V
    -
    -
    -
    -
    -
    -
  • STW21N65M5
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    SILICON
    150°C TJ
    Tube
    MDmesh™ V
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    190mOhm
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STW21N
    3
    1
    125W Tc
    Single
    ENHANCEMENT MODE
    125W
    -
    N-Channel
    SWITCHING
    190m Ω @ 8.5A, 10V
    5V @ 250μA
    1950pF @ 100V
    17A Tc
    50nC @ 10V
    10ns
    10V
    ±25V
    24 ns
    12 ns
    17A
    4V
    -
    25V
    650V
    68A
    400 mJ
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    yes
    -
    -
    -
    -
    -
  • STW21NM60N
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    SILICON
    150°C TJ
    Tube
    MDmesh™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    17A
    STW21N
    3
    1
    140W Tc
    Single
    ENHANCEMENT MODE
    140W
    -
    N-Channel
    SWITCHING
    220m Ω @ 8.5A, 10V
    4V @ 250μA
    1900pF @ 50V
    17A Tc
    66nC @ 10V
    15ns
    10V
    ±25V
    31 ns
    84 ns
    17A
    3V
    TO-247AD
    25V
    600V
    68A
    -
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    0.22Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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