STMicroelectronics STW20NK50Z
- Part Number:
- STW20NK50Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3813625-STW20NK50Z
- Description:
- MOSFET N-CH 500V 17A TO-247
- Datasheet:
- STW20NK50Z
STMicroelectronics STW20NK50Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW20NK50Z.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight9.071847g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance270mOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating17A
- Base Part NumberSTW20N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max190W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation190W
- Turn On Delay Time28 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs270m Ω @ 8.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C17A Tc
- Gate Charge (Qg) (Max) @ Vgs119nC @ 10V
- Rise Time20ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time70 ns
- Continuous Drain Current (ID)17A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)68A
- Avalanche Energy Rating (Eas)850 mJ
- Height20.15mm
- Length15.75mm
- Width5.15mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STW20NK50Z Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 850 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2600pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 68A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW20NK50Z Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 68A.
a threshold voltage of 3.75V
STW20NK50Z Applications
There are a lot of STMicroelectronics
STW20NK50Z applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 850 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2600pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 68A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW20NK50Z Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 68A.
a threshold voltage of 3.75V
STW20NK50Z Applications
There are a lot of STMicroelectronics
STW20NK50Z applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STW20NK50Z More Descriptions
N-channel 500 V, 0.23 Ohm, 17 A SuperMESH(TM) Power MOSFET Zener-protected TO-247
MOSFET;N-Ch;VDSS 500V;RDS(ON) 0.23Ohm;ID 17A;TO-247;PD 190W;VGS /-30V;gFS 13S
N-Channel 500 V 0.27 Ohm Flange Mount SuperMESH Power Mosfet - TO-247
MOSFET N-CH 500V 17A TO-247 / Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-247 Tube
Power Field-Effect Transistor, 17A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:190W; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Id Max:17A; On State resistance @ Vgs = 10V:270mohm; Package / Case:TO-247; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
MOSFET;N-Ch;VDSS 500V;RDS(ON) 0.23Ohm;ID 17A;TO-247;PD 190W;VGS /-30V;gFS 13S
N-Channel 500 V 0.27 Ohm Flange Mount SuperMESH Power Mosfet - TO-247
MOSFET N-CH 500V 17A TO-247 / Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-247 Tube
Power Field-Effect Transistor, 17A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:190W; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Id Max:17A; On State resistance @ Vgs = 10V:270mohm; Package / Case:TO-247; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to STW20NK50Z.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal PositionConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinPbfree CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxView Compare
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STW20NK50ZACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-247-339.071847gSILICON150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99270mOhmTin (Sn)FET General Purpose Power500VMOSFET (Metal Oxide)17ASTW20N31190W TcSingleENHANCEMENT MODE190W28 nsN-ChannelSWITCHING270m Ω @ 8.5A, 10V4.5V @ 100μA2600pF @ 25V17A Tc119nC @ 10V20ns10V±30V15 ns70 ns17A3.75VTO-247AC30V500V68A850 mJ20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free-----------
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ACTIVE (Last Updated: 7 months ago)16 WeeksThrough HoleThrough HoleTO-247-33-SILICON150°C TJTubeMDmesh™ IIe3Active1 (Unlimited)3EAR99190mOhmTin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)-STW23N31125W Tc-ENHANCEMENT MODE125W6.6 nsN-ChannelSWITCHING190m Ω @ 8.5A, 10V4V @ 250μA1330pF @ 50V17A Tc45nC @ 10V19ns10V±25V29 ns71 ns17A3V-25V-68A254 mJ20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead FreeSINGLESINGLE WITH BUILT-IN DIODE500V500V------
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--Through HoleThrough HoleTO-247-33-SILICON150°C TJTubeMDmesh™ Ve3Obsolete1 (Unlimited)3EAR99190mOhmTin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)-STW21N31125W TcSingleENHANCEMENT MODE125W-N-ChannelSWITCHING190m Ω @ 8.5A, 10V5V @ 250μA1950pF @ 100V17A Tc50nC @ 10V10ns10V±25V24 ns12 ns17A4V-25V650V68A400 mJ20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free----yes-----
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--Through HoleThrough HoleTO-247-33-SILICON150°C TJTubeMDmesh™e3Obsolete1 (Unlimited)3EAR99-Tin (Sn)FET General Purpose Power600VMOSFET (Metal Oxide)17ASTW21N31140W TcSingleENHANCEMENT MODE140W-N-ChannelSWITCHING220m Ω @ 8.5A, 10V4V @ 250μA1900pF @ 50V17A Tc66nC @ 10V15ns10V±25V31 ns84 ns17A3VTO-247AD25V600V68A----No SVHC-ROHS3 CompliantLead Free-----NOT SPECIFIEDnot_compliantNOT SPECIFIEDNot Qualified0.22Ohm
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