STMicroelectronics STW24NK55Z
- Part Number:
- STW24NK55Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3070922-STW24NK55Z
- Description:
- MOSFET N-CH 550V 23A TO-247
- Datasheet:
- STW24NK55Z
STMicroelectronics STW24NK55Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW24NK55Z.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- SeriesSuperMESH™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTW24N
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max285W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation285W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs220m Ω @ 11.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds4397.5pF @ 25V
- Current - Continuous Drain (Id) @ 25°C23A Tc
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Rise Time35ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)88 ns
- Turn-Off Delay Time136 ns
- Continuous Drain Current (ID)23A
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.22Ohm
- Drain to Source Breakdown Voltage550V
- Pulsed Drain Current-Max (IDM)92A
- Avalanche Energy Rating (Eas)400 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STW24NK55Z Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4397.5pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 23A amps.In this device, the drain-source breakdown voltage is 550V and VGS=550V, so the drain-source breakdown voltage is 550V in this case.It is [136 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STW24NK55Z Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 136 ns
based on its rated peak drain current 92A.
STW24NK55Z Applications
There are a lot of STMicroelectronics
STW24NK55Z applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4397.5pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 23A amps.In this device, the drain-source breakdown voltage is 550V and VGS=550V, so the drain-source breakdown voltage is 550V in this case.It is [136 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STW24NK55Z Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 136 ns
based on its rated peak drain current 92A.
STW24NK55Z Applications
There are a lot of STMicroelectronics
STW24NK55Z applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
STW24NK55Z More Descriptions
N-channel 550 V - 0.18 Y - 23 A - TO-247 Zener-protected SuperMESH Power MOSFET
Trans MOSFET N-CH 550V 23A 3-Pin(3 Tab) TO-247 Tube
Power Field-Effect Transistor, 23A I(D), 550V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
CAP CER 0.068UF 100V X7S RADIAL
Trans MOSFET N-CH 550V 23A 3-Pin(3 Tab) TO-247 Tube
Power Field-Effect Transistor, 23A I(D), 550V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
CAP CER 0.068UF 100V X7S RADIAL
The three parts on the right have similar specifications to STW24NK55Z.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeJESD-609 CodeECCN CodeTerminal FinishVoltage - Rated DCCurrent RatingTurn On Delay TimeJEDEC-95 CodeRadiation HardeningLifecycle StatusFactory Lead TimeNumber of PinsDrain to Source Voltage (Vdss)Threshold VoltageREACH SVHCReach Compliance CodeView Compare
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STW24NK55ZThrough HoleThrough HoleTO-247-3SILICON150°C TJTubeSuperMESH™Obsolete1 (Unlimited)3FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTW24N3R-PSFM-T3Not Qualified1285W TcSingleENHANCEMENT MODE285WN-ChannelSWITCHING220m Ω @ 11.5A, 10V4.5V @ 100μA4397.5pF @ 25V23A Tc130nC @ 10V35ns10V±30V88 ns136 ns23A30V0.22Ohm550V92A400 mJROHS3 CompliantLead Free----------------
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Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeSuperMESH™Obsolete1 (Unlimited)3FET General Purpose PowerMOSFET (Metal Oxide)--STW29N3R-PSFM-T3-1350W TcSingleENHANCEMENT MODE350WN-ChannelSWITCHING130m Ω @ 14.5A, 10V4.5V @ 150μA6450pF @ 25V29A Tc200nC @ 10V43ns10V±30V25 ns133 ns29A30V0.13Ohm500V116A500 mJROHS3 CompliantLead Freee3EAR99Matte Tin (Sn)500V29A45 nsTO-247ACNo-------
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Through HoleThrough HoleTO-247-3--55°C~150°C TJTubeMDmesh™ DM2Active1 (Unlimited)--MOSFET (Metal Oxide)--STW28N----170W Tc---N-Channel-160m Ω @ 10.5A, 10V5V @ 250μA1500pF @ 100V21A Tc34nC @ 10V-10V±25V--21A-----ROHS3 Compliant--EAR99------ACTIVE (Last Updated: 8 months ago)17 Weeks3600V4VNo SVHC-
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Through HoleThrough HoleTO-247-3SILICON150°C TJTubeMDmesh™Obsolete1 (Unlimited)3FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTW21N3-Not Qualified1140W TcSingleENHANCEMENT MODE140WN-ChannelSWITCHING220m Ω @ 8.5A, 10V4V @ 250μA1900pF @ 50V17A Tc66nC @ 10V15ns10V±25V31 ns84 ns17A25V0.22Ohm600V68A-ROHS3 CompliantLead Freee3EAR99Tin (Sn)600V17A-TO-247AD---3-3VNo SVHCnot_compliant
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