STMicroelectronics STW26NM60N
- Part Number:
- STW26NM60N
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3813624-STW26NM60N
- Description:
- MOSFET N-CH 600V 20A TO-247
- Datasheet:
- STW26NM60N
STMicroelectronics STW26NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW26NM60N.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time16 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- SeriesMDmesh™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance165mOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTW26N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max140W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation140W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs165m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1800pF @ 50V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Rise Time25ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)50 ns
- Turn-Off Delay Time85 ns
- Continuous Drain Current (ID)20A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)80A
- Height20.15mm
- Length15.75mm
- Width5.15mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STW26NM60N Description
The STW26NM60N is a 600V N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
STW26NM60N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
STW26NM60N Applications
Industrial
Aerospace & defense Appliances Building automation Electronic point of sale (EPOS)Factory automation & control Grid infrastructure Industrial transport (non-car & non-light truck) Lighting Medical Motor drives Power delivery Pro audio, video & signage Test & measurement
Enterprise systems
Data center & enterprise computing Enterprise machine Enterprise projectors
Personal electronics
Connected peripherals & printers Data storage Gaming Home theater & entertainment Mobile phones PC & notebooks Portable electronics Tablets TV Wearables (non-medical)
The STW26NM60N is a 600V N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
STW26NM60N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
STW26NM60N Applications
Industrial
Aerospace & defense Appliances Building automation Electronic point of sale (EPOS)Factory automation & control Grid infrastructure Industrial transport (non-car & non-light truck) Lighting Medical Motor drives Power delivery Pro audio, video & signage Test & measurement
Enterprise systems
Data center & enterprise computing Enterprise machine Enterprise projectors
Personal electronics
Connected peripherals & printers Data storage Gaming Home theater & entertainment Mobile phones PC & notebooks Portable electronics Tablets TV Wearables (non-medical)
STW26NM60N More Descriptions
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package
Trans MOSFET N-CH 600V 20A 3-Pin(3 Tab) TO-247 Tube / MOSFET N-CH 600V 20A TO-247
Single N-Channel 600 V 140 W 60 nC MDmesh Through Hole Mosfet - TO-247-3
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics STW26NM60N.
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Trans MOSFET N-CH 600V 20A 3-Pin(3 Tab) TO-247 Tube / MOSFET N-CH 600V 20A TO-247
Single N-Channel 600 V 140 W 60 nC MDmesh Through Hole Mosfet - TO-247-3
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics STW26NM60N.
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
The three parts on the right have similar specifications to STW26NM60N.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishTerminal PositionConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Pbfree CodeView Compare
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STW26NM60NACTIVE (Last Updated: 8 months ago)16 WeeksTinThrough HoleThrough HoleTO-247-33SILICON150°C TJTubeMDmesh™ IIe3Active1 (Unlimited)3EAR99165mOhmFET General Purpose PowerMOSFET (Metal Oxide)STW26N31140W TcSingleENHANCEMENT MODE140W13 nsN-ChannelSWITCHING165m Ω @ 10A, 10V4V @ 250μA1800pF @ 50V20A Tc60nC @ 10V25ns10V±30V50 ns85 ns20A3V25V600V80A20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free--------
-
ACTIVE (Last Updated: 7 months ago)16 Weeks-Through HoleThrough HoleTO-247-33SILICON150°C TJTubeMDmesh™ IIe3Active1 (Unlimited)3EAR99190mOhmFET General Purpose PowerMOSFET (Metal Oxide)STW23N31125W Tc-ENHANCEMENT MODE125W6.6 nsN-ChannelSWITCHING190m Ω @ 8.5A, 10V4V @ 250μA1330pF @ 50V17A Tc45nC @ 10V19ns10V±25V29 ns71 ns17A3V25V-68A20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead FreeTin (Sn)SINGLESINGLE WITH BUILT-IN DIODE500V500V254 mJ-
-
---Through HoleThrough HoleTO-247-33SILICON150°C TJTubeMDmesh™ Ve3Obsolete1 (Unlimited)3EAR99190mOhmFET General Purpose PowerMOSFET (Metal Oxide)STW21N31125W TcSingleENHANCEMENT MODE125W-N-ChannelSWITCHING190m Ω @ 8.5A, 10V5V @ 250μA1950pF @ 100V17A Tc50nC @ 10V10ns10V±25V24 ns12 ns17A4V25V650V68A20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead FreeTin (Sn)----400 mJyes
-
ACTIVE (Last Updated: 8 months ago)17 Weeks-Through HoleThrough HoleTO-247-33--55°C~150°C TJTubeMDmesh™ DM2-Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)STW28N--170W Tc----N-Channel-160m Ω @ 10.5A, 10V5V @ 250μA1500pF @ 100V21A Tc34nC @ 10V-10V±25V--21A4V------No SVHC-ROHS3 Compliant----600V---
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