STMicroelectronics STW200NF03

Name: STW200NF03
Brand: STMicroelectronics
SKU: 2488016-STW200NF03
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW200NF03

Manufacturer:: STMicroelectronics

Ventron No:: 2488016-STW200NF03

Description:: MOSFET N-CH 30V 120A TO-247

ECAD Model:

Datasheet:: STW200NF03

Specifications

STMicroelectronics STW200NF03 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW200NF03.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
120A
Base Part Number
STW200
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Power Dissipation-Max
350W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350W
Turn On Delay Time
50 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.8m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
10000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
280nC @ 10V
Rise Time
300ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
80 ns
Turn-Off Delay Time
100 ns
Continuous Drain Current (ID)
120A
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0028Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
480A
Avalanche Energy Rating (Eas)
4000 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW200NF03 Description
STW200NF03 is a 30v N-channel ultra low on-resistance STripFET? II MOSFET. This Power MOSFET series realized with STMicroelectronics's unique STripFET process has specifically been designed to minimize input capacitance and gate charge. The STW200NF03 is particularly suitable in OR-ing function circuits and synchronous rectification.

STW200NF03 Features
Typical RDS(on)=0.002|?
100% avalance tested
Drain-source voltage(VGS=0): 30V
Drain Current (continuous) at TC = 25??C: 120A
Total Dissipation at TC = 25??C: 350W

STW200NF03 Applications
High-efficiency DC-DC converters
High current, high switching speed
Or-ing function
Cellular phones
Laptop computers
Photovoltaic systems

STW200NF03 More Descriptions

N-CHANNEL 30V - 0.002 OHM - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET II MOSFET
Trans MOSFET N-CH 30V 120A 3-Pin(3 Tab) TO-247 Tube
Power MOSFET Transistors N-Ch 30 Volt 120 Amp
Power Field-Effect Transistor, 120A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Product Comparison

The three parts on the right have similar specifications to STW200NF03.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Number of Pins

Resistance

Terminal Position

Configuration

Threshold Voltage

DS Breakdown Voltage-Min

Height

Length

Width

REACH SVHC

Pbfree Code

View Compare
STW200NF03

STMicroelectronics

Through Hole

Through Hole

TO-247-3

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

30V

MOSFET (Metal Oxide)

120A

STW200

3

R-PSFM-T3

1

350W Tc

Single

ENHANCEMENT MODE

350W

50 ns

N-Channel

SWITCHING

2.8m Ω @ 60A, 10V

4V @ 250μA

10000pF @ 25V

120A Tc

280nC @ 10V

300ns

10V

±20V

80 ns

100 ns

120A

TO-247AC

20V

0.0028Ohm

30V

480A

4000 mJ

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW27N60M2-EP

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

-55°C~150°C TJ

Tube

MDmesh™ M2-EP

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

STW27N

-

-

-

170W Tc

-

-

-

-

N-Channel

-

163m Ω @ 10A, 10V

4.75V @ 250μA

1320pF @ 100V

20A Tc

33nC @ 10V

-

10V

±25V

-

-

20A

-

-

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

NOT SPECIFIED

NOT SPECIFIED

600V

-

-

-

-

-

-

-

-

-

-

-

STW200NF03 vs STW27N60M2-EP
STW23NM50N

STMicroelectronics

Through Hole

Through Hole

TO-247-3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STW23N

3

-

1

125W Tc

-

ENHANCEMENT MODE

125W

6.6 ns

N-Channel

SWITCHING

190m Ω @ 8.5A, 10V

4V @ 250μA

1330pF @ 50V

17A Tc

45nC @ 10V

19ns

10V

±25V

29 ns

71 ns

17A

-

25V

-

-

68A

254 mJ

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 7 months ago)

16 Weeks

-

-

500V

3

190mOhm

SINGLE

SINGLE WITH BUILT-IN DIODE

3V

500V

20.15mm

15.75mm

5.15mm

No SVHC

-

STW200NF03 vs STW23NM50N
STW21N65M5

STMicroelectronics

Through Hole

Through Hole

TO-247-3

SILICON

150°C TJ

Tube

MDmesh™ V

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STW21N

3

-

1

125W Tc

Single

ENHANCEMENT MODE

125W

-

N-Channel

SWITCHING

190m Ω @ 8.5A, 10V

5V @ 250μA

1950pF @ 100V

17A Tc

50nC @ 10V

10ns

10V

±25V

24 ns

12 ns

17A

-

25V

-

650V

68A

400 mJ

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

3

190mOhm

-

-

4V

-

20.15mm

15.75mm

5.15mm

No SVHC

yes

STW200NF03 vs STW21N65M5