STMicroelectronics STW19NM50N

Name: STW19NM50N
Brand: STMicroelectronics
SKU: 3070181-STW19NM50N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW19NM50N

Manufacturer:: STMicroelectronics

Ventron No:: 3070181-STW19NM50N

Description:: MOSFET N-CH 500V 14A TO-247

ECAD Model:

Datasheet:: STW19NM50N

Specifications

STMicroelectronics STW19NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW19NM50N.

Lifecycle Status
NRND (Last Updated: 8 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
250mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Base Part Number
STW19N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
110W Tc
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
250m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 50V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Rise Time
16ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
61 ns
Continuous Drain Current (ID)
14A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
56A
Avalanche Energy Rating (Eas)
208 mJ
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW19NM50N Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STW19NM50N Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance

STW19NM50N Applications Switching applications

STW19NM50N More Descriptions

N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-247
N-Channel 550 V 0.25 Ohm Flange Mount MDmesh II Power MosFet - TO-247
Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 500V, 14A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to STW19NM50N.

Image

Part Number

Manufacturer

Lifecycle Status

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Position

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Additional Feature

Voltage - Rated DC

Current Rating

Drain-source On Resistance-Max

View Compare
STW19NM50N

STMicroelectronics

NRND (Last Updated: 8 months ago)

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

250mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

STW19N

3

1

110W Tc

Dual

ENHANCEMENT MODE

110W

12 ns

N-Channel

SWITCHING

250m Ω @ 7A, 10V

4V @ 250μA

1000pF @ 50V

14A Tc

34nC @ 10V

16ns

10V

±25V

17 ns

61 ns

14A

3V

25V

500V

56A

208 mJ

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
STW14NM65N

STMicroelectronics

-

-

Through Hole

Through Hole

TO-247-3

-

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

-

380mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

-

STW14N

3

1

125W Tc

Single

ENHANCEMENT MODE

125W

-

N-Channel

SWITCHING

380m Ω @ 6A, 10V

4V @ 250μA

1300pF @ 50V

12A Tc

45nC @ 10V

13ns

10V

±25V

20 ns

55 ns

12A

-

25V

650V

48A

300 mJ

-

-

-

-

-

ROHS3 Compliant

Lead Free

Tin (Sn)

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

-

-

-

-

STW19NM50N vs STW14NM65N
STW13NM50N

STMicroelectronics

-

-

Through Hole

Through Hole

TO-247-3

-

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

Obsolete

1 (Unlimited)

3

-

320mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

-

STW13N

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

N-Channel

SWITCHING

320m Ω @ 6A, 10V

4V @ 250μA

960pF @ 50V

12A Tc

30nC @ 10V

15ns

10V

±25V

10 ns

40 ns

12A

-

25V

500V

48A

200 mJ

-

-

-

-

No

ROHS3 Compliant

Lead Free

MATTE TIN/TIN SILVER COPPER

-

-

-

R-PSFM-T3

-

-

-

-

-

STW19NM50N vs STW13NM50N
STW14NM50

STMicroelectronics

-

-

Through Hole

Through Hole

TO-247-3

-

SILICON

150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

STW14N

3

1

175W Tc

Single

ENHANCEMENT MODE

175W

-

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 250μA

1000pF @ 25V

14A Tc

38nC @ 10V

10ns

10V

±30V

8 ns

19 ns

14A

-

30V

500V

56A

400 mJ

-

-

-

-

-

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

NOT APPLICABLE

not_compliant

NOT APPLICABLE

R-PSFM-T3

Not Qualified

ULTRA-LOW RESISTANCE

550V

14A

0.35Ohm

STW19NM50N vs STW14NM50