Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STW10NK80Z
STW10NK80Z

STMicroelectronics STW10NK80Z

Part Number:
STW10NK80Z
Manufacturer:
STMicroelectronics
Ventron No:
3070505-STW10NK80Z
Description:
MOSFET N-CH 800V 9A TO-247
ECAD Model:
Datasheet:
STW10NK80Z

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
STMicroelectronics STW10NK80Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW10NK80Z.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    900mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    800V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    9A
  • Base Part Number
    STW10N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    160W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    160W
  • Turn On Delay Time
    30 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    900m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2180pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    72nC @ 10V
  • Rise Time
    20ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    17 ns
  • Turn-Off Delay Time
    65 ns
  • Continuous Drain Current (ID)
    9A
  • Threshold Voltage
    3.75V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain to Source Breakdown Voltage
    800V
  • Avalanche Energy Rating (Eas)
    290 mJ
  • Height
    20.15mm
  • Length
    15.75mm
  • Width
    5.15mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STW10NK80Z Description The STW10NK80Z is an 800V N-channel Zener-protected Power MOSFET developed using SuperMESH? technology, achieved through optimization of well-established strip-based PowerMESH? layout. In addition to drastically reducing on-resistance, extra effort is taken to guarantee excellent dv/dt capability for the most demanding applications. To fulfill the demanding efficiency requirements of today, improve gate charge and reduce power dissipation.
STW10NK80Z Features 100% avalanche tested
Gate charge minimized
Extremely high dv/dt capability
Very low intrinsic capacitances
Very good manufacturing repeatability
STW10NK80Z Applications Industrial
General-purpose
Audio Amplifier
Sensor / Detector Applications
Radio & RF Applications under 100MHz
Audio Recorders
Voice Recorders
STW10NK80Z More Descriptions
N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package
N-Channel 800 V 0.9 Ohm Flange Mount SuperMESH™ MOSFET - TO-247
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.78ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation
Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Product Comparison
The three parts on the right have similar specifications to STW10NK80Z.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Reach Compliance Code
    Configuration
    Drain to Source Voltage (Vdss)
    JESD-30 Code
    Pulsed Drain Current-Max (IDM)
    Contact Plating
    Terminal Position
    View Compare
  • STW10NK80Z
    STW10NK80Z
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    900mOhm
    Tin (Sn)
    FET General Purpose Power
    800V
    MOSFET (Metal Oxide)
    9A
    STW10N
    3
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    30 ns
    N-Channel
    SWITCHING
    900m Ω @ 4.5A, 10V
    4.5V @ 100μA
    2180pF @ 25V
    9A Tc
    72nC @ 10V
    20ns
    10V
    ±30V
    17 ns
    65 ns
    9A
    3.75V
    30V
    9A
    800V
    290 mJ
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • STW12NK60Z
    STW12NK60Z
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    150°C TJ
    Tube
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    -
    -
    -
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STW12N
    -
    -
    150W Tc
    -
    -
    -
    -
    N-Channel
    -
    640m Ω @ 5A, 10V
    4.5V @ 100μA
    1740pF @ 25V
    10A Tc
    59nC @ 10V
    -
    10V
    ±30V
    -
    -
    10A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    not_compliant
    Single
    600V
    -
    -
    -
    -
    STW10NK80Z vs STW12NK60Z
  • STW13NM50N
    STW13NM50N
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    -
    Obsolete
    1 (Unlimited)
    3
    -
    320mOhm
    MATTE TIN/TIN SILVER COPPER
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STW13N
    3
    1
    100W Tc
    Single
    ENHANCEMENT MODE
    100W
    -
    N-Channel
    SWITCHING
    320m Ω @ 6A, 10V
    4V @ 250μA
    960pF @ 50V
    12A Tc
    30nC @ 10V
    15ns
    10V
    ±25V
    10 ns
    40 ns
    12A
    -
    25V
    -
    500V
    200 mJ
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    R-PSFM-T3
    48A
    -
    -
    STW10NK80Z vs STW13NM50N
  • STW19NM50N
    STW19NM50N
    STMicroelectronics
    NRND (Last Updated: 8 months ago)
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    150°C TJ
    Tube
    MDmesh™ II
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    250mOhm
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STW19N
    3
    1
    110W Tc
    Dual
    ENHANCEMENT MODE
    110W
    12 ns
    N-Channel
    SWITCHING
    250m Ω @ 7A, 10V
    4V @ 250μA
    1000pF @ 50V
    14A Tc
    34nC @ 10V
    16ns
    10V
    ±25V
    17 ns
    61 ns
    14A
    3V
    25V
    -
    500V
    208 mJ
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    56A
    Tin
    SINGLE
    STW10NK80Z vs STW19NM50N
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for STW10NK80Z
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.