STMicroelectronics STW160N75F3

Name: STW160N75F3
Brand: STMicroelectronics
SKU: 3586698-STW160N75F3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW160N75F3

Manufacturer:: STMicroelectronics

Ventron No:: 3586698-STW160N75F3

Description:: MOSFET N-CH 75V 120A TO-247

ECAD Model:

Datasheet:: STW160N75F3

Specifications

STMicroelectronics STW160N75F3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW160N75F3.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
4MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STW160
Pin Count
3
Number of Elements
1
Power Dissipation-Max
330W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
330W
Turn On Delay Time
22 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6750pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
85nC @ 10V
Rise Time
65ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
100 ns
Continuous Drain Current (ID)
60A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Pulsed Drain Current-Max (IDM)
480A
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW160N75F3 Description
STW160N75F3 is a 75v N-channel STripFET? Power MOSFET. This N-channel enhancement mode Power MOSFET STW160N75F3 is the latest refinement of ST’s STripFET? process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics, and low gate charge. The operating junction and storage temperature are between -55 and 175℃. The MOSFET STW160N75F3 is in the TO-247 package with 330W power dissipation.

STW160N75F3 Features
Ultra-low on-resistance
100% avalanche tested
Drain-source voltage (VGS=0):75V
Gate-source voltage: ±20V
Drain current (continuous) at TC = 25°C: 120A

STW160N75F3 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STW160N75F3 More Descriptions

N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-247 package
Power Field-Effect Transistor, 120A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
MOSFET, N CH, 75V, 120A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:TO-247; Power Dissipation Pd:330W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STW160N75F3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Avalanche Energy Rating (Eas)

Lifecycle Status

Factory Lead Time

Voltage - Rated DC

Current Rating

Drain Current-Max (Abs) (ID)

Contact Plating

Terminal Position

View Compare
STW160N75F3

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

Tube

STripFET™

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

4MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STW160

3

1

330W Tc

Single

ENHANCEMENT MODE

330W

22 ns

N-Channel

SWITCHING

4m Ω @ 60A, 10V

4V @ 250μA

6750pF @ 25V

120A Tc

85nC @ 10V

65ns

10V

±20V

15 ns

100 ns

60A

4V

TO-247AB

20V

75V

480A

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW14NM65N

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

SILICON

150°C TJ

Tube

MDmesh™ II

e3

-

Obsolete

1 (Unlimited)

3

-

380mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STW14N

3

1

125W Tc

Single

ENHANCEMENT MODE

125W

-

N-Channel

SWITCHING

380m Ω @ 6A, 10V

4V @ 250μA

1300pF @ 50V

12A Tc

45nC @ 10V

13ns

10V

±25V

20 ns

55 ns

12A

-

-

25V

650V

48A

-

-

-

-

-

ROHS3 Compliant

Lead Free

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

300 mJ

-

-

-

-

-

-

-

STW160N75F3 vs STW14NM65N
STW10NK80Z

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

-

Active

1 (Unlimited)

3

EAR99

900mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STW10N

3

1

160W Tc

Single

ENHANCEMENT MODE

160W

30 ns

N-Channel

SWITCHING

900m Ω @ 4.5A, 10V

4.5V @ 100μA

2180pF @ 25V

9A Tc

72nC @ 10V

20ns

10V

±30V

17 ns

65 ns

9A

3.75V

-

30V

800V

-

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

290 mJ

ACTIVE (Last Updated: 8 months ago)

12 Weeks

800V

9A

9A

-

-

STW160N75F3 vs STW10NK80Z
STW19NM50N

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

-

Active

1 (Unlimited)

3

EAR99

250mOhm

-

FET General Purpose Power

MOSFET (Metal Oxide)

STW19N

3

1

110W Tc

Dual

ENHANCEMENT MODE

110W

12 ns

N-Channel

SWITCHING

250m Ω @ 7A, 10V

4V @ 250μA

1000pF @ 50V

14A Tc

34nC @ 10V

16ns

10V

±25V

17 ns

61 ns

14A

3V

-

25V

500V

56A

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

208 mJ

NRND (Last Updated: 8 months ago)

-

-

-

-

Tin

SINGLE

STW160N75F3 vs STW19NM50N