STMicroelectronics STW13NK50Z
- Part Number:
- STW13NK50Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488049-STW13NK50Z
- Description:
- MOSFET N-CH 500V 11A TO-247
- Datasheet:
- STW13NK50Z
STMicroelectronics STW13NK50Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW13NK50Z.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTW13N
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max140W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation140W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs480m Ω @ 6.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
- Rise Time23ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)24 ns
- Turn-Off Delay Time61 ns
- Continuous Drain Current (ID)11A
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.48Ohm
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)44A
- Avalanche Energy Rating (Eas)240 mJ
- RoHS StatusROHS3 Compliant
STW13NK50Z Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 240 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [61 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 44A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STW13NK50Z Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 61 ns
based on its rated peak drain current 44A.
STW13NK50Z Applications
There are a lot of STMicroelectronics
STW13NK50Z applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 240 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [61 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 44A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STW13NK50Z Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 61 ns
based on its rated peak drain current 44A.
STW13NK50Z Applications
There are a lot of STMicroelectronics
STW13NK50Z applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
STW13NK50Z More Descriptions
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™2; Power MOSFET
Power MOSFET Transistors 500V 0.40Ohm 11A N-Channel
MOSFET 500V 0.40Ohm 11A Zener SuperMESH
Power Field-Effect Transistor, 11A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Power MOSFET Transistors 500V 0.40Ohm 11A N-Channel
MOSFET 500V 0.40Ohm 11A Zener SuperMESH
Power Field-Effect Transistor, 11A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
The three parts on the right have similar specifications to STW13NK50Z.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusJESD-609 CodeResistanceTerminal FinishReach Compliance CodeLead FreeRadiation HardeningLifecycle StatusFactory Lead TimeNumber of PinsECCN CodeVoltage - Rated DCCurrent RatingTurn On Delay TimeThreshold VoltageDrain Current-Max (Abs) (ID)HeightLengthWidthREACH SVHCView Compare
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STW13NK50ZThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeSuperMESH™Obsolete1 (Unlimited)3FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTW13N3R-PSFM-T3Not Qualified1140W TcSingleENHANCEMENT MODE140WN-ChannelSWITCHING480m Ω @ 6.5A, 10V4.5V @ 100μA1600pF @ 25V11A Tc47nC @ 10V23ns10V±30V24 ns61 ns11ATO-247AC30V0.48Ohm500V44A240 mJROHS3 Compliant--------------------
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Through HoleThrough HoleTO-247-3SILICON150°C TJTubeMDmesh™ IIObsolete1 (Unlimited)3FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTW14N3R-PSFM-T3Not Qualified1125W TcSingleENHANCEMENT MODE125WN-ChannelSWITCHING380m Ω @ 6A, 10V4V @ 250μA1300pF @ 50V12A Tc45nC @ 10V13ns10V±25V20 ns55 ns12A-25V-650V48A300 mJROHS3 Compliante3380mOhmTin (Sn)not_compliantLead Free--------------
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Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeMDmesh™ IIObsolete1 (Unlimited)3FET General Purpose PowerMOSFET (Metal Oxide)--STW13N3R-PSFM-T3-1100W TcSingleENHANCEMENT MODE100WN-ChannelSWITCHING320m Ω @ 6A, 10V4V @ 250μA960pF @ 50V12A Tc30nC @ 10V15ns10V±25V10 ns40 ns12A-25V-500V48A200 mJROHS3 Compliant-320mOhmMATTE TIN/TIN SILVER COPPER-Lead FreeNo-------------
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Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeSuperMESH™Active1 (Unlimited)3FET General Purpose PowerMOSFET (Metal Oxide)--STW10N3--1160W TcSingleENHANCEMENT MODE160WN-ChannelSWITCHING900m Ω @ 4.5A, 10V4.5V @ 100μA2180pF @ 25V9A Tc72nC @ 10V20ns10V±30V17 ns65 ns9A-30V-800V-290 mJROHS3 Compliante3900mOhmTin (Sn)-Lead FreeNoACTIVE (Last Updated: 8 months ago)12 Weeks3EAR99800V9A30 ns3.75V9A20.15mm15.75mm5.15mmNo SVHC
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