STMicroelectronics STW13NK100Z

Name: STW13NK100Z
Brand: STMicroelectronics
SKU: 2848356-STW13NK100Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW13NK100Z

Manufacturer:: STMicroelectronics

Ventron No:: 2848356-STW13NK100Z

Description:: MOSFET N-CH 1KV 13A TO-247

ECAD Model:

Datasheet:: STW13NK100Z

Specifications

STMicroelectronics STW13NK100Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW13NK100Z.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
9.071847g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
700mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
1kV
Technology
MOSFET (Metal Oxide)
Current Rating
13A
Base Part Number
STW13N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
350W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350W
Turn On Delay Time
45 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
700m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
266nC @ 10V
Rise Time
35ns
Drain to Source Voltage (Vdss)
1000V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
45 ns
Turn-Off Delay Time
145 ns
Continuous Drain Current (ID)
13A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
1kV
Pulsed Drain Current-Max (IDM)
52A
Avalanche Energy Rating (Eas)
700 mJ
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW13NK100Z is an N-channel Power MOSFET. It also pushes ON-resistance down significantly, special attention is given to ensure an excellent capability of dV/dt for the most demanding of applications. This MOSFET completes ST the entire range of high-voltage MOSFETs which include innovative products.

Applications

Industrial Management
server/telecom power
TV power
ATX power
Industrial power

STW13NK100Z More Descriptions

N-CHANNEL 1000V 0.56 Ohm 13.5A TO-247 ZENER-PROTECTED SUPERMESH™ POWER MOSFET
N-Channel 1 kV 0.7 O 350 W Zener Protected SuperMESH Power MosFet - TO-247
N Channel Mosfet, 1Kv, 13A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:13A; On Resistance Rds(On):0.7Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
Power Field-Effect Transistor, 13A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Product Comparison

The three parts on the right have similar specifications to STW13NK100Z.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-30 Code

Drain Current-Max (Abs) (ID)

Additional Feature

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

View Compare
STW13NK100Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-247-3

3

9.071847g

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

700mOhm

Tin (Sn)

FET General Purpose Power

1kV

MOSFET (Metal Oxide)

13A

STW13N

3

1

350W Tc

Single

ENHANCEMENT MODE

350W

45 ns

N-Channel

SWITCHING

700m Ω @ 6.5A, 10V

4.5V @ 150μA

6000pF @ 25V

13A Tc

266nC @ 10V

35ns

1000V

10V

±30V

45 ns

145 ns

13A

3.75V

TO-247AC

30V

1kV

52A

700 mJ

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STW13NM50N

STMicroelectronics

-

-

Through Hole

Through Hole

TO-247-3

-

-

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

Obsolete

1 (Unlimited)

3

-

320mOhm

MATTE TIN/TIN SILVER COPPER

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STW13N

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

N-Channel

SWITCHING

320m Ω @ 6A, 10V

4V @ 250μA

960pF @ 50V

12A Tc

30nC @ 10V

15ns

-

10V

±25V

10 ns

40 ns

12A

-

-

25V

500V

48A

200 mJ

-

-

-

-

No

ROHS3 Compliant

Lead Free

R-PSFM-T3

-

-

-

-

-

-

-

STW13NK100Z vs STW13NM50N
STW10NK80Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-247-3

3

-

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

900mOhm

Tin (Sn)

FET General Purpose Power

800V

MOSFET (Metal Oxide)

9A

STW10N

3

1

160W Tc

Single

ENHANCEMENT MODE

160W

30 ns

N-Channel

SWITCHING

900m Ω @ 4.5A, 10V

4.5V @ 100μA

2180pF @ 25V

9A Tc

72nC @ 10V

20ns

-

10V

±30V

17 ns

65 ns

9A

3.75V

-

30V

800V

-

290 mJ

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

9A

-

-

-

-

-

-

STW13NK100Z vs STW10NK80Z
STW14NM50

STMicroelectronics

-

-

Through Hole

Through Hole

TO-247-3

-

-

SILICON

150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

550V

MOSFET (Metal Oxide)

14A

STW14N

3

1

175W Tc

Single

ENHANCEMENT MODE

175W

-

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 250μA

1000pF @ 25V

14A Tc

38nC @ 10V

10ns

-

10V

±30V

8 ns

19 ns

14A

-

-

30V

500V

56A

400 mJ

-

-

-

-

-

ROHS3 Compliant

Lead Free

R-PSFM-T3

-

ULTRA-LOW RESISTANCE

NOT APPLICABLE

not_compliant

NOT APPLICABLE

Not Qualified

0.35Ohm

STW13NK100Z vs STW14NM50