STMicroelectronics STP2NK60Z

Name: STP2NK60Z
Brand: STMicroelectronics
SKU: 2488555-STP2NK60Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP2NK60Z

Manufacturer:: STMicroelectronics

Ventron No:: 2488555-STP2NK60Z

Description:: MOSFET N-CH 600V 1.4A TO-220

ECAD Model:

Datasheet:: STP2NK60Z

Specifications

STMicroelectronics STP2NK60Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP2NK60Z.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Resistance
8Ohm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
1.4A
Base Part Number
STP2N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8 Ω @ 700mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
170pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.4A Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
55 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
1.4A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
6A
Avalanche Energy Rating (Eas)
90 mJ
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP2NK60Z Description The STP2NK60Z is made possible by a thorough optimization of ST's well-known strip-based PowerMESHTM layout. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high voltage MOS-FETs, including the innovative MDmeshTM devices, is complemented by this series.
STP2NK60Z Features typical rds(on) = 7.2 ?
extremely high dv/dt capability
esd improved capability
100% avalanche tested
new high voltage benchmark
gate charge minimized
STP2NK60Z Applications low power battery chargers
switch mode low power supplies(SMPS)
low power, ballast, cfl (compact fluorescent lamps)

STP2NK60Z More Descriptions

N-channel 600 V, 7.2 Ohm typ., 1.4 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-220 package
Trans MOSFET N-CH 600V 1.4A 3-Pin (3 Tab) TO-220 Tube
Power Field-Effect Transistor, 1.5A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:1.4A; Resistance, Rds On:8ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.75V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 45W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Alternate Case Style: SOT-78B; Current Id Max: 1.4A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 770mA; Voltage Vds: 600V; Voltage Vds Typ: 600V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STP2NK60Z.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Weight

ECCN Code

Number of Channels

Case Connection

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Height

Length

Width

Termination

Dual Supply Voltage

Nominal Vgs

View Compare
STP2NK60Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

8Ohm

Matte Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

1.4A

STP2N

3

1

45W Tc

Single

ENHANCEMENT MODE

45W

8 ns

N-Channel

SWITCHING

8 Ω @ 700mA, 10V

4.5V @ 50μA

170pF @ 25V

1.4A Tc

10nC @ 10V

30ns

10V

±30V

55 ns

22 ns

1.4A

3.75V

TO-220AB

30V

600V

6A

90 mJ

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP28N60M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

3

-

-

-

-

MOSFET (Metal Oxide)

-

STP28N

-

1

170W Tc

Single

ENHANCEMENT MODE

-

14.5 ns

N-Channel

SWITCHING

150m Ω @ 12A, 10V

4V @ 250μA

1370pF @ 100V

24A Tc

37nC @ 10V

-

10V

±25V

-

100 ns

24A

-

TO-220AB

25V

-

88A

-

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

329.988449mg

EAR99

1

DRAIN

600V

22A

600V

15.75mm

10.4mm

4.6mm

-

-

-

STP2NK60Z vs STP28N60M2
STP21NM60ND

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Obsolete

1 (Unlimited)

3

220mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP21N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

18 ns

N-Channel

SWITCHING

220m Ω @ 8.5A, 10V

5V @ 250μA

1800pF @ 50V

17A Tc

60nC @ 10V

16ns

10V

±25V

48 ns

70 ns

17A

4V

TO-220AB

25V

600V

68A

-

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

EAR99

-

-

-

-

-

15.75mm

10.4mm

4.6mm

-

-

-

STP2NK60Z vs STP21NM60ND
STP26NM60N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

165MOhm

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP26N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

13 ns

N-Channel

SWITCHING

165m Ω @ 10A, 10V

4V @ 250μA

1800pF @ 50V

20A Tc

60nC @ 10V

25ns

10V

±30V

50 ns

85 ns

10A

-

TO-220AB

25V

600V

80A

-

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

EAR99

-

-

-

20A

-

15.75mm

10.4mm

4.6mm

Through Hole

600V

3 V

STP2NK60Z vs STP26NM60N