STMicroelectronics STP240N10F7

Name: STP240N10F7
Brand: STMicroelectronics
SKU: 2849128-STP240N10F7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP240N10F7

Manufacturer:: STMicroelectronics

Ventron No:: 2849128-STP240N10F7

Description:: MOSFET N-CH 100V 180A TO220

ECAD Model:

Datasheet:: STP240N10F7

Specifications

STMicroelectronics STP240N10F7 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP240N10F7.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
13 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
DeepGATE™, STripFET™ VII
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Base Part Number
STP240
Power Dissipation-Max
300W Tc
Element Configuration
Single
Power Dissipation
300W
Turn On Delay Time
62 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.2m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
12600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
180A Tc
Gate Charge (Qg) (Max) @ Vgs
176nC @ 10V
Rise Time
108ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
148 ns
Continuous Drain Current (ID)
180A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Height
15.75mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP240N10F7 Description The STripFETTMF7 technology is used in the STP240N10F7 N-channel Power MOSFET with an improved trench gate structure to produce a meager on-state resistance and lower internal capacitance and gate charge for quicker and more effective switching.
STP240N10F7 Features Ultra-low on-resistance
100% avalanche tested
STP240N10F7 Applications High current switching applications
Medical
Motor Drivers
Battery Chargers
Audio Amplifier Stages
Audio Power Amplifier Circuits

STP240N10F7 More Descriptions

N-channel 100 V, 2.85 mOhm typ., 110 A STripFET F7 Power MOSFET in a TO-220 package
Trans MOSFET N-CH 100V 110A 3-Pin(3 Tab) TO-220AB Tube
MOSFET N-Ch 100V 110A STripFET F7 TO-220
Mosfet, N-Ch, 100V, 110A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Stmicroelectronics STP240N10F7

Product Comparison

The three parts on the right have similar specifications to STP240N10F7.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Base Part Number

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Subcategory

Voltage - Rated DC

Current Rating

Pin Count

JESD-30 Code

Number of Elements

Operating Mode

Transistor Application

JEDEC-95 Code

Pulsed Drain Current-Max (IDM)

Resistance

Threshold Voltage

REACH SVHC

Termination

Drain Current-Max (Abs) (ID)

Dual Supply Voltage

Nominal Vgs

View Compare
STP240N10F7

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

13 Weeks

Through Hole

Through Hole

TO-220-3

3

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

STP240

300W Tc

Single

300W

62 ns

N-Channel

3.2m Ω @ 60A, 10V

4.5V @ 250μA

12600pF @ 25V

180A Tc

176nC @ 10V

108ns

10V

±20V

40 ns

148 ns

180A

20V

100V

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP20N20

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

-50°C~150°C TJ

Tube

STripFET™ II

Obsolete

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

STP20N

90W Tc

Single

90W

15 ns

N-Channel

125m Ω @ 10A, 10V

4V @ 250μA

940pF @ 25V

18A Tc

39nC @ 10V

30ns

10V

±20V

10 ns

40 ns

18A

20V

200V

-

-

-

No

ROHS3 Compliant

Lead Free

SILICON

e3

yes

3

Matte Tin (Sn)

FET General Purpose Power

200V

18A

3

R-PSFM-T3

1

ENHANCEMENT MODE

SWITCHING

TO-220AB

72A

-

-

-

-

-

-

-

STP240N10F7 vs STP20N20
STP21NM60ND

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

150°C TJ

Tube

FDmesh™ II

Obsolete

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

STP21N

140W Tc

Single

140W

18 ns

N-Channel

220m Ω @ 8.5A, 10V

5V @ 250μA

1800pF @ 50V

17A Tc

60nC @ 10V

16ns

10V

±25V

48 ns

70 ns

17A

25V

600V

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

SILICON

e3

-

3

Matte Tin (Sn) - annealed

FET General Purpose Power

-

-

3

-

1

ENHANCEMENT MODE

SWITCHING

TO-220AB

68A

220mOhm

4V

No SVHC

-

-

-

-

STP240N10F7 vs STP21NM60ND
STP26NM60N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

150°C TJ

Tube

MDmesh™ II

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

STP26N

140W Tc

Single

140W

13 ns

N-Channel

165m Ω @ 10A, 10V

4V @ 250μA

1800pF @ 50V

20A Tc

60nC @ 10V

25ns

10V

±30V

50 ns

85 ns

10A

25V

600V

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

SILICON

e3

-

3

Matte Tin (Sn)

FET General Purpose Power

-

-

3

-

1

ENHANCEMENT MODE

SWITCHING

TO-220AB

80A

165MOhm

-

No SVHC

Through Hole

20A

600V

3 V

STP240N10F7 vs STP26NM60N