STMicroelectronics STP20NM50FD

Name: STP20NM50FD
Brand: STMicroelectronics
SKU: 3070599-STP20NM50FD
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP20NM50FD

Manufacturer:: STMicroelectronics

Ventron No:: 3070599-STP20NM50FD

Description:: MOSFET N-CH 500V 20A TO-220

ECAD Model:

Datasheet:: STP20NM50FD

Specifications

STMicroelectronics STP20NM50FD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP20NM50FD.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
FDmesh™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
250mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
20A
Base Part Number
STP20N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Power Dissipation-Max
192W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
192W
Turn On Delay Time
22 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
250m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1380pF @ 25V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
53nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Continuous Drain Current (ID)
20A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
80A
Avalanche Energy Rating (Eas)
700 mJ
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Lead Free

Description

STP20NM50FD Description
The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and drain.

STP20NM50FD Features
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Tight process control and high manufacturing yields

STP20NM50FD Applications
Switching applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
DC-DC converters
Low voltage motor control

STP20NM50FD More Descriptions

N-Channel 500V - 0.22Ohm - 20A - TO-220 FDmesh(TM) POWER MOSFET (with FAST DIODE)
N-Channel 500 V 0.25 Ohm Flange Mount FDmesh Power Mosfet - TO-220
Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.22Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes |Stmicroelectronics STP20NM50FD.

Product Comparison

The three parts on the right have similar specifications to STP20NM50FD.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Number of Pins

Case Connection

Turn-Off Delay Time

Height

Length

Width

Contact Plating

Threshold Voltage

REACH SVHC

Termination

Drain Current-Max (Abs) (ID)

Dual Supply Voltage

Nominal Vgs

View Compare
STP20NM50FD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-65°C~150°C TJ

Tube

FDmesh™

e3

Active

1 (Unlimited)

3

EAR99

250mOhm

Tin (Sn)

FET General Purpose Power

500V

MOSFET (Metal Oxide)

20A

STP20N

3

R-PSFM-T3

1

192W Tc

Single

ENHANCEMENT MODE

192W

22 ns

N-Channel

SWITCHING

250m Ω @ 10A, 10V

5V @ 250μA

1380pF @ 25V

20A Tc

53nC @ 10V

20ns

10V

±30V

15 ns

20A

TO-220AB

30V

500V

80A

700 mJ

No

Non-RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP24N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

3

EAR99

190MOhm

-

-

-

MOSFET (Metal Oxide)

-

STP24N

-

-

1

150W Tc

Single

ENHANCEMENT MODE

150W

14 ns

N-Channel

SWITCHING

190m Ω @ 9A, 10V

4V @ 250μA

1060pF @ 100V

18A Tc

29nC @ 10V

9ns

10V

±25V

61 ns

18A

TO-220AB

25V

600V

72A

180 mJ

No

ROHS3 Compliant

Lead Free

3

DRAIN

15 ns

15.75mm

10.4mm

4.6mm

-

-

-

-

-

-

-

STP20NM50FD vs STP24N60M2
STP23NM60ND

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

180mOhm

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP23N

3

-

1

150W Tc

Single

ENHANCEMENT MODE

150W

21 ns

N-Channel

SWITCHING

180m Ω @ 10A, 10V

5V @ 250μA

2100pF @ 50V

19.5A Tc

69nC @ 10V

45ns

10V

±25V

40 ns

19.5A

TO-220AB

25V

600V

78A

700 mJ

No

ROHS3 Compliant

Lead Free

3

-

90 ns

15.75mm

10.4mm

4.6mm

Tin

4V

No SVHC

-

-

-

-

STP20NM50FD vs STP23NM60ND
STP26NM60N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

165MOhm

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP26N

3

-

1

140W Tc

Single

ENHANCEMENT MODE

140W

13 ns

N-Channel

SWITCHING

165m Ω @ 10A, 10V

4V @ 250μA

1800pF @ 50V

20A Tc

60nC @ 10V

25ns

10V

±30V

50 ns

10A

TO-220AB

25V

600V

80A

-

No

ROHS3 Compliant

Lead Free

3

-

85 ns

15.75mm

10.4mm

4.6mm

-

-

No SVHC

Through Hole

20A

600V

3 V

STP20NM50FD vs STP26NM60N