STMicroelectronics STGD10NC60SDT4

Name: STGD10NC60SDT4
Brand: STMicroelectronics
SKU: 2854548-STGD10NC60SDT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGD10NC60SDT4

Manufacturer:: STMicroelectronics

Ventron No:: 2854548-STGD10NC60SDT4

Description:: IGBT 600V 18A 60W DPAK

ECAD Model:

Datasheet:: STG(D,F)10NC60SD

Specifications

STMicroelectronics STGD10NC60SDT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGD10NC60SDT4.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
ULTRA FAST
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
60W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STGD10
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
60W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
18A
Reverse Recovery Time
22 ns
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Turn On Time
22.5 ns
Test Condition
390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.65V @ 15V, 5A
Turn Off Time-Nom (toff)
560 ns
Gate Charge
18nC
Current - Collector Pulsed (Icm)
25A
Td (on/off) @ 25°C
19ns/160ns
Switching Energy
60μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

STGD10NC60SDT4 Description
STGD10NC60SDT4 is a 600V fast IGBT. This IGBT STGD10NC60SDT4 utilizes the advanced PowerMESHTM process resulting in an excellent trade-off between switching performance and low on-state behavior. The transistor STGD10NC60SDT4 can be applied in drives due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor STGD10NC60SDT4 is in the DPAK package with 60w Power Dissipation.

STGD10NC60SDT4 Features
Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VcE(sat)) Very soft ultra-fast antiparallel diode Continuous collector current at TC = 25°C: 18A Turn-off latching current: 14A

STGD10NC60SDT4 Applications
Automotive Infotainment & cluster Industrial Lighting Personal electronics Gaming Drives

STGD10NC60SDT4 More Descriptions

Trans IGBT Chip N-CH 600V 18A 60000mW 3-Pin(2 Tab) DPAK T/R
10 A, 600 V, fast IGBT with Ultrafast diode
Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, TO-252

Product Comparison

The three parts on the right have similar specifications to STGD10NC60SDT4.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Radiation Hardening

RoHS Status

Lifecycle Status

Factory Lead Time

Weight

Turn On Delay Time

Turn-Off Delay Time

Height

Length

Width

Lead Free

Collector Emitter Saturation Voltage

REACH SVHC

Voltage - Rated DC

Current Rating

Power Dissipation

Rise Time

JEDEC-95 Code

Continuous Collector Current

View Compare
STGD10NC60SDT4

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - annealed

ULTRA FAST

Insulated Gate BIP Transistors

60W

GULL WING

260

30

STGD10

3

R-PSSO-G2

1

Single

COLLECTOR

Standard

60W

POWER CONTROL

N-CHANNEL

600V

18A

22 ns

600V

600V

22.5 ns

390V, 5A, 10 Ω, 15V

1.65V @ 15V, 5A

560 ns

18nC

25A

19ns/160ns

60μJ (on), 340μJ (off)

20V

5.75V

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGD8NC60KDT4

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

-

Active

1 (Unlimited)

2

EAR99

-

-

Insulated Gate BIP Transistors

62W

GULL WING

-

-

STGD8

3

R-PSSO-G2

1

Single

COLLECTOR

Standard

62W

POWER CONTROL

N-CHANNEL

600V

15A

23.5 ns

600V

600V

23 ns

390V, 3A, 10 Ω, 15V

2.75V @ 15V, 3A

242 ns

19nC

30A

17ns/72ns

55μJ (on), 85μJ (off)

20V

6.5V

No

ROHS3 Compliant

ACTIVE (Last Updated: 7 months ago)

8 Weeks

350.003213mg

17 ns

72 ns

2.4mm

6.6mm

6.2mm

Lead Free

-

-

-

-

-

-

-

-

STGD10NC60SDT4 vs STGD8NC60KDT4
STGD18N40LZT4

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, PowerMESH™

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

VOLTAGE CLAMPING

Insulated Gate BIP Transistors

125W

GULL WING

260

30

STGD18

3

R-PSSO-G2

1

Single

COLLECTOR

Logic

125W

AUTOMOTIVE IGNITION

N-CHANNEL

360V

25A

-

420V

420V

4450 ns

300V, 10A, 5V

1.7V @ 4.5V, 10A

22200 ns

29nC

40A

650ns/13.5μs

-

16V

-

No

ROHS3 Compliant

ACTIVE (Last Updated: 7 months ago)

8 Weeks

350.003213mg

650 ms

13.5 s

2.4mm

6.6mm

6.2mm

Lead Free

1.35V

No SVHC

-

-

-

-

-

-

STGD10NC60SDT4 vs STGD18N40LZT4
STGD7NC60HT4

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - annealed

-

Insulated Gate BIP Transistors

70W

GULL WING

260

30

STGD7

3

R-PSSO-G2

1

Single

-

Standard

-

POWER CONTROL

N-CHANNEL

600V

25A

-

600V

600V

25.5 ns

390V, 7A, 10 Ω, 15V

2.5V @ 15V, 7A

221 ns

35nC

50A

18.5ns/72ns

95μJ (on), 115μJ (off)

20V

5.75V

No

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

8 Weeks

3.949996g

18.5 ns

116 ns

2.4mm

6.6mm

6.2mm

Lead Free

2.5V

-

600V

7A

70W

8.5ns

TO-252AA

14A

STGD10NC60SDT4 vs STGD7NC60HT4