STB45NF06T4

STMicroelectronics STB45NF06T4

Part Number:
STB45NF06T4
Manufacturer:
STMicroelectronics
Ventron No:
2483891-STB45NF06T4
Description:
MOSFET N-CH 60V 38A D2PAK
ECAD Model:
Datasheet:
STB45NF06T4

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Specifications
STMicroelectronics STB45NF06T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB45NF06T4.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-4, D2Pak (3 Leads Tab), TO-263AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    23mOhm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STB45N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    80W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    80W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    28m Ω @ 19A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    980pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    38A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    58nC @ 10V
  • Rise Time
    40ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    28 ns
  • Continuous Drain Current (ID)
    19A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Dual Supply Voltage
    60V
  • Nominal Vgs
    3 V
  • Height
    4.6mm
  • Length
    10.4mm
  • Width
    9.35mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STB45NF06T4 Overview
A device's maximal input capacitance is 980pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 19A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 28 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

STB45NF06T4 Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 28 ns
a threshold voltage of 3V


STB45NF06T4 Applications
There are a lot of STMicroelectronics
STB45NF06T4 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STB45NF06T4 More Descriptions
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
N-Channel 60 V 38 A 28 mOhm 80 W Surface Mount STripFET™ Mosfet - D2PAK
Trans MOSFET N-CH 60V 38A Automotive 3-Pin(2 Tab) D2PAK T/R
MOSFET, N CH, 60V, 38A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:60V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:80W; Operating Temperature Range:-65°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:38A; Package / Case:D2-PAK; Power Dissipation Pd:80W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to STB45NF06T4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Voltage - Rated DC
    Current Rating
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Manufacturer Package Identifier
    Terminal Position
    Configuration
    Number of Channels
    Case Connection
    Drain-source On Resistance-Max
    Max Junction Temperature (Tj)
    Radiation Hardening
    View Compare
  • STB45NF06T4
    STB45NF06T4
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-4, D2Pak (3 Leads Tab), TO-263AA
    3
    SILICON
    175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    23mOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    245
    not_compliant
    30
    STB45N
    3
    R-PSSO-G2
    Not Qualified
    1
    80W Tc
    Single
    ENHANCEMENT MODE
    80W
    12 ns
    N-Channel
    SWITCHING
    28m Ω @ 19A, 10V
    4V @ 250μA
    980pF @ 25V
    38A Tc
    58nC @ 10V
    40ns
    10V
    ±20V
    10 ns
    28 ns
    19A
    3V
    20V
    60V
    60V
    3 V
    4.6mm
    10.4mm
    9.35mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STB45NF06
    ACTIVE (Last Updated: 7 months ago)
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    28mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    245
    not_compliant
    30
    STB45N
    3
    R-PSSO-G2
    Not Qualified
    1
    80W Tc
    Single
    ENHANCEMENT MODE
    80W
    -
    N-Channel
    SWITCHING
    28m Ω @ 19A, 10V
    4V @ 250μA
    980pF @ 25V
    38A Tc
    58nC @ 10V
    40ns
    10V
    ±20V
    10 ns
    28 ns
    38A
    -
    20V
    60V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    60V
    38A
    152A
    260 mJ
    -
    -
    -
    -
    -
    -
    -
    -
  • STB43N65M5
    ACTIVE (Last Updated: 8 months ago)
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    Automotive, AEC-Q101, MDmesh™
    -
    Active
    1 (Unlimited)
    2
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STB43N
    -
    R-PSSO-G2
    -
    1
    250W Tc
    -
    ENHANCEMENT MODE
    250W
    73 ns
    N-Channel
    SWITCHING
    63m Ω @ 21A, 10V
    5V @ 250μA
    4400pF @ 100V
    42A Tc
    100nC @ 10V
    -
    10V
    ±25V
    -
    12 ns
    42A
    -
    25V
    650V
    -
    -
    4.83mm
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    650 mJ
    D2PAK-0079457-A2
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    1
    DRAIN
    0.063Ohm
    150°C
    -
  • STB40NF20
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    STripFET™
    e3
    Active
    1 (Unlimited)
    2
    -
    EAR99
    45mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    30
    STB40N
    3
    R-PSSO-G2
    -
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    20 ns
    N-Channel
    SWITCHING
    45m Ω @ 20A, 10V
    4V @ 250μA
    2500pF @ 25V
    40A Tc
    75nC @ 10V
    44ns
    10V
    ±20V
    22 ns
    74 ns
    40A
    3V
    20V
    200V
    -
    -
    4.6mm
    10.4mm
    9.35mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    200V
    40A
    -
    -
    -
    -
    -
    -
    DRAIN
    -
    -
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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