STMicroelectronics STB45NF06T4
- Part Number:
- STB45NF06T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2483891-STB45NF06T4
- Description:
- MOSFET N-CH 60V 38A D2PAK
- Datasheet:
- STB45NF06T4
STMicroelectronics STB45NF06T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB45NF06T4.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-4, D2Pak (3 Leads Tab), TO-263AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature175°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance23mOhm
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTB45N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max80W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation80W
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs28m Ω @ 19A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds980pF @ 25V
- Current - Continuous Drain (Id) @ 25°C38A Tc
- Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
- Rise Time40ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time28 ns
- Continuous Drain Current (ID)19A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Dual Supply Voltage60V
- Nominal Vgs3 V
- Height4.6mm
- Length10.4mm
- Width9.35mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STB45NF06T4 Overview
A device's maximal input capacitance is 980pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 19A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 28 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STB45NF06T4 Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 28 ns
a threshold voltage of 3V
STB45NF06T4 Applications
There are a lot of STMicroelectronics
STB45NF06T4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 980pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 19A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 28 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STB45NF06T4 Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 28 ns
a threshold voltage of 3V
STB45NF06T4 Applications
There are a lot of STMicroelectronics
STB45NF06T4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STB45NF06T4 More Descriptions
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
N-Channel 60 V 38 A 28 mOhm 80 W Surface Mount STripFET Mosfet - D2PAK
Trans MOSFET N-CH 60V 38A Automotive 3-Pin(2 Tab) D2PAK T/R
MOSFET, N CH, 60V, 38A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:60V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:80W; Operating Temperature Range:-65°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:38A; Package / Case:D2-PAK; Power Dissipation Pd:80W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
N-Channel 60 V 38 A 28 mOhm 80 W Surface Mount STripFET Mosfet - D2PAK
Trans MOSFET N-CH 60V 38A Automotive 3-Pin(2 Tab) D2PAK T/R
MOSFET, N CH, 60V, 38A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:60V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:80W; Operating Temperature Range:-65°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:38A; Package / Case:D2-PAK; Power Dissipation Pd:80W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to STB45NF06T4.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeVoltage - Rated DCCurrent RatingPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Manufacturer Package IdentifierTerminal PositionConfigurationNumber of ChannelsCase ConnectionDrain-source On Resistance-MaxMax Junction Temperature (Tj)Radiation HardeningView Compare
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STB45NF06T4ACTIVE (Last Updated: 7 months ago)12 WeeksSurface MountSurface MountTO-263-4, D2Pak (3 Leads Tab), TO-263AA3SILICON175°C TJTape & Reel (TR)STripFET™ IIe3Active1 (Unlimited)2SMD/SMTEAR9923mOhmMatte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)GULL WING245not_compliant30STB45N3R-PSSO-G2Not Qualified180W TcSingleENHANCEMENT MODE80W12 nsN-ChannelSWITCHING28m Ω @ 19A, 10V4V @ 250μA980pF @ 25V38A Tc58nC @ 10V40ns10V±20V10 ns28 ns19A3V20V60V60V3 V4.6mm10.4mm9.35mmNo SVHCROHS3 CompliantLead Free-------------
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ACTIVE (Last Updated: 7 months ago)-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIe3Obsolete1 (Unlimited)2-EAR9928mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)GULL WING245not_compliant30STB45N3R-PSSO-G2Not Qualified180W TcSingleENHANCEMENT MODE80W-N-ChannelSWITCHING28m Ω @ 19A, 10V4V @ 250μA980pF @ 25V38A Tc58nC @ 10V40ns10V±20V10 ns28 ns38A-20V60V------ROHS3 CompliantLead Free60V38A152A260 mJ--------
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ACTIVE (Last Updated: 8 months ago)-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJCut Tape (CT)Automotive, AEC-Q101, MDmesh™-Active1 (Unlimited)2-EAR99---MOSFET (Metal Oxide)GULL WINGNOT SPECIFIED-NOT SPECIFIEDSTB43N-R-PSSO-G2-1250W Tc-ENHANCEMENT MODE250W73 nsN-ChannelSWITCHING63m Ω @ 21A, 10V5V @ 250μA4400pF @ 100V42A Tc100nC @ 10V-10V±25V-12 ns42A-25V650V--4.83mm---ROHS3 CompliantLead Free---650 mJD2PAK-0079457-A2SINGLESINGLE WITH BUILT-IN DIODE1DRAIN0.063Ohm150°C-
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ACTIVE (Last Updated: 7 months ago)12 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~150°C TJTape & Reel (TR)STripFET™e3Active1 (Unlimited)2-EAR9945mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)GULL WING245-30STB40N3R-PSSO-G2-1160W TcSingleENHANCEMENT MODE160W20 nsN-ChannelSWITCHING45m Ω @ 20A, 10V4V @ 250μA2500pF @ 25V40A Tc75nC @ 10V44ns10V±20V22 ns74 ns40A3V20V200V--4.6mm10.4mm9.35mmNo SVHCROHS3 CompliantLead Free200V40A------DRAIN--No
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