STMicroelectronics STB40NS15T4

Name: STB40NS15T4
Brand: STMicroelectronics
SKU: 2488076-STB40NS15T4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB40NS15T4

Manufacturer:: STMicroelectronics

Ventron No:: 2488076-STB40NS15T4

Description:: MOSFET N-CH 150V 40A D2PAK

ECAD Model:

Datasheet:: STB40NS15T4

Specifications

STMicroelectronics STB40NS15T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB40NS15T4.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
MESH OVERLAY™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
45mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
40A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STB40N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
52m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2420pF @ 25V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
45ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
35 ns
Turn-Off Delay Time
85 ns
Continuous Drain Current (ID)
20A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
150V
Dual Supply Voltage
150V
Nominal Vgs
3 V
Height
4.6mm
Length
10.4mm
Width
9.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB40NS15T4 Description
STB40NS15T4 belongs to the family of N-channel MESH OVERLAY? power MOSFETs provided by STMicroelectronics based on its consolidated strip layout-based MESH OVERLAY? process. The resulting STB40NS15T4 is able to deliver low gate charge, exceptional dv/dt capability, and extremely low intrinsic capacitances.

STB40NS15T4 Features
Low gate charge
MESH OVERLAY? process
Exceptional dv/dt capability
Extremely low intrinsic capacitances
Supplied in the D2PAK package

STB40NS15T4 Applications
Switching application

STB40NS15T4 More Descriptions

N-CHANNEL 150V - 0.042 Ohm - 40A D2PAK MESH OVERLAY MOSFET
Trans MOSFET N-CH 150V 40A 3-Pin(2 Tab) D2PAK T/R
MOSFET, N CH, 150V, 40A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-65°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:40A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STB40NS15T4.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Drain to Source Voltage (Vdss)

Reach Compliance Code

Qualification Status

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Case Connection

Threshold Voltage

View Compare
STB40NS15T4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

2

SMD/SMT

EAR99

45mOhm

Matte Tin (Sn)

FET General Purpose Power

150V

MOSFET (Metal Oxide)

GULL WING

245

40A

30

STB40N

3

R-PSSO-G2

1

300W Tc

Single

ENHANCEMENT MODE

300W

25 ns

N-Channel

SWITCHING

52m Ω @ 20A, 10V

4V @ 250μA

2420pF @ 25V

40A Tc

110nC @ 10V

45ns

10V

±20V

35 ns

85 ns

20A

20V

150V

150V

3 V

4.6mm

10.4mm

9.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
STB43N60DM2

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tape & Reel (TR)

MDmesh™ DM2

-

Active

1 (Unlimited)

-

-

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

STB43N

-

-

-

250W Tc

-

-

-

-

N-Channel

-

93m Ω @ 17A, 10V

5V @ 250μA

2500pF @ 100V

34A Tc

56nC @ 10V

-

10V

±25V

-

-

34A

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

17 Weeks

600V

-

-

-

-

-

-

STB40NS15T4 vs STB43N60DM2
STB45NF06

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ II

e3

Obsolete

1 (Unlimited)

2

-

EAR99

28mOhm

Matte Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

245

38A

30

STB45N

3

R-PSSO-G2

1

80W Tc

Single

ENHANCEMENT MODE

80W

-

N-Channel

SWITCHING

28m Ω @ 19A, 10V

4V @ 250μA

980pF @ 25V

38A Tc

58nC @ 10V

40ns

10V

±20V

10 ns

28 ns

38A

20V

60V

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 7 months ago)

-

-

not_compliant

Not Qualified

152A

260 mJ

-

-

STB40NS15T4 vs STB45NF06
STB40NF20

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™

e3

Active

1 (Unlimited)

2

-

EAR99

45mOhm

Matte Tin (Sn)

FET General Purpose Power

200V

MOSFET (Metal Oxide)

GULL WING

245

40A

30

STB40N

3

R-PSSO-G2

1

160W Tc

Single

ENHANCEMENT MODE

160W

20 ns

N-Channel

SWITCHING

45m Ω @ 20A, 10V

4V @ 250μA

2500pF @ 25V

40A Tc

75nC @ 10V

44ns

10V

±20V

22 ns

74 ns

40A

20V

200V

-

-

4.6mm

10.4mm

9.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 7 months ago)

12 Weeks

-

-

-

-

-

DRAIN

3V

STB40NS15T4 vs STB40NF20