STMicroelectronics STB40NF20

Name: STB40NF20
Brand: STMicroelectronics
SKU: 2482401-STB40NF20
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB40NF20

Manufacturer:: STMicroelectronics

Ventron No:: 2482401-STB40NF20

Description:: MOSFET N-CH 200V 40A D2PAK

ECAD Model:

Datasheet:: STB40NF20

Specifications

STMicroelectronics STB40NF20 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB40NF20.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
45mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
40A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STB40N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Gate Charge (Qg) (Max) @ Vgs
75nC @ 10V
Rise Time
44ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
74 ns
Continuous Drain Current (ID)
40A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Height
4.6mm
Length
10.4mm
Width
9.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB40NF20 Description This Power MOSFET series realized with STMicroelectronics' unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as a primary switch in advanced high-efficiency isolated DC-DC converters.

STB40NF20 Features Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability The excellent figure of merit (RDS*Qg) 100% avalanche tested

STB40NF20 Applications Switching application

STB40NF20 More Descriptions

Mosfet Transistor, N Channel, 40 A, 200 V, 45 Mohm, 10 V, 3 V |Stmicroelectronics STB40NF20
N-Channel 200 V 0.045 O Surface Mount STripFET Power Mosfet - D2PAK
Trans MOSFET N-CH 200V 40A 3-Pin(2 Tab) D2PAK T/R
N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 40A; On State resistance @ Vgs = 10V: 45mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 160A; SMD Marking: 40NF20; Termination Type: Surface Mount Device; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

Product Comparison

The three parts on the right have similar specifications to STB40NF20.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Position

Reach Compliance Code

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Termination

Dual Supply Voltage

Nominal Vgs

Drain Current-Max (Abs) (ID)

View Compare
STB40NF20

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™

e3

Active

1 (Unlimited)

2

EAR99

45mOhm

Matte Tin (Sn)

FET General Purpose Power

200V

MOSFET (Metal Oxide)

GULL WING

245

40A

30

STB40N

3

R-PSSO-G2

1

160W Tc

Single

ENHANCEMENT MODE

160W

DRAIN

20 ns

N-Channel

SWITCHING

45m Ω @ 20A, 10V

4V @ 250μA

2500pF @ 25V

40A Tc

75nC @ 10V

44ns

10V

±20V

22 ns

74 ns

40A

3V

20V

200V

4.6mm

10.4mm

9.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
STB45N60DM2AG

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

17 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, MDmesh™ DM2

e3

Active

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

GULL WING

245

-

NOT SPECIFIED

STB45N

-

R-PSSO-G2

1

250W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

90m Ω @ 17A, 10V

5V @ 250μA

2500pF @ 100V

34A Tc

56nC @ 10V

-

10V

±25V

-

-

34A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

SINGLE

not_compliant

SINGLE WITH BUILT-IN DIODE

600V

0.093Ohm

136A

600V

800 mJ

-

-

-

-

STB40NF20 vs STB45N60DM2AG
STB40NS15T4

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

2

EAR99

45mOhm

Matte Tin (Sn)

FET General Purpose Power

150V

MOSFET (Metal Oxide)

GULL WING

245

40A

30

STB40N

3

R-PSSO-G2

1

300W Tc

Single

ENHANCEMENT MODE

300W

-

25 ns

N-Channel

SWITCHING

52m Ω @ 20A, 10V

4V @ 250μA

2420pF @ 25V

40A Tc

110nC @ 10V

45ns

10V

±20V

35 ns

85 ns

20A

-

20V

150V

4.6mm

10.4mm

9.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

SMD/SMT

150V

3 V

-

STB40NF20 vs STB40NS15T4
STB4NK60Z-1

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

150°C TJ

Tube

SuperMESH™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STB4N

3

-

1

70W Tc

Single

ENHANCEMENT MODE

70W

-

12 ns

N-Channel

SWITCHING

2 Ω @ 2A, 10V

4.5V @ 50μA

510pF @ 25V

4A Tc

26nC @ 10V

9.5ns

10V

±30V

16.5 ns

29 ns

4A

-

30V

600V

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

2Ohm

16A

-

120 mJ

-

-

-

4A

STB40NF20 vs STB4NK60Z-1